Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA50M65DF2

Name: STGWA50M65DF2
Brand: STMicroelectronics
SKU: STGWA50M65DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGWA50M65DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA50M65DF2.pdf

Description:: TRENCH GATE FIELD-STOP IGBT M SE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:280

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGWA50M65DF2 from STMicroelectronics is a 650 V, 50 A trench-gate field-stop IGBT with integrated soft- and fast-recovery antiparallel diode in TO-247 long leads package. It delivers V_CE(sat) = 1.65 V (typ.) at I_C = 50 A, 175 °C maximum junction temperature, and 6 µs short-circuit withstand time at V_GE = 15 V - optimized for motor control inverters requiring robust switching, thermal stability, and safe paralleling.

For engineers reviewing the STGWA50M65DF2 datasheet, STGWA50M65DF2 pinout, STGWA50M65DF2 application, or STGWA50M65DF2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient, tight parameter distribution, low R_thJC (0.4 °C/W), and integrated diode with t_rr = 162 ns (T_J = 25 °C) for reduced switching losses in PFC and UPS designs.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture to balance conduction loss and switching speed while ensuring short-circuit ruggedness. Its gate threshold voltage (V_GE(th) = 5–7 V) and ±20 V gate-emitter rating support standard 15 V gate drivers with margin against transients.

The co-packaged diode features soft recovery (dI_rr/dt = 420 A/µs typ.), low Q_rr = 1.37 µC, and reverse recovery energy E_rr = 192 µJ at 25 °C - enabling high-frequency operation up to 20 kHz in general-purpose inverters without snubber circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - supports 400 V DC bus systems with 1.6× safety margin for transient overvoltage in industrial motor drives.
I_C (T_C = 100 °C)	50 A - continuous output current capability at case temperature up to 100 °C, enabling compact heatsink design.
V_CE(sat) @ 50 A, 125 °C	1.95 V - low conduction loss ensures <100 W conduction dissipation at rated current, reducing thermal stress.
t_sc @ V_GE = 15 V	6 µs - enables reliable short-circuit protection using standard gate driver desaturation detection circuits.
R_thJC (IGBT)	0.4 °C/W - allows efficient heat transfer from junction to heatsink, supporting >300 W total power dissipation at T_C = 25 °C.
Q_g	150 nC - moderate gate charge enables drive with standard 2–4 A peak gate drivers without excessive Miller effect.
t_rr (diode)	162 ns @ T_J = 25 °C - fast, soft recovery minimizes voltage overshoot and EMI during commutation in bridge legs.

Pinout & Package

TO-247 long leads package with isolated mounting hole; case material: epoxy resin with copper leadframe; creepage/clearance compliant per IEC 60664-1.

Pin/Terminal	Circuit Role	Design Meaning
C (Collector)	Main high-side current path	Connected to DC+ bus in inverter half-bridge; carries full load current and must be routed with low-inductance layout.
G (Gate)	Control input terminal	Receives PWM signal from gate driver; requires low-impedance path and local 100 nF decoupling to suppress ringing.
E (Emitter)	Common reference node	Serves as return path for both IGBT and diode; critical for accurate current sensing and gate loop stability.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing when multiple devices operate in parallel without external emitter resistors.
Tight parameter distribution	Reduces unit-to-unit variation in V_CE(sat) and switching times, simplifying system-level timing calibration.
Integrated soft-recovery diode	Eliminates need for external freewheeling diode, reduces PCB area, and avoids mismatch-induced shoot-through risk.
175 °C max junction temperature	Supports operation in high-ambient environments (e.g., enclosed UPS cabinets) without derating below 50 A.
Low R_thJC (0.4 °C/W)	Permits use of smaller heatsinks or higher ambient temperatures while maintaining T_J ≤ 175 °C under full load.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 5–10 kW servo drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switch in IGBT half-bridge topology; handles bidirectional current via integrated diode during regeneration.

Use Value: 6 µs short-circuit tolerance enables robust fault response; 1.65 V V_CE(sat) reduces conduction loss by ~15% vs. legacy 650 V IGBTs at 50 A.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC sine wave with <3% THD.

IC Role / Device Role / Timing Role: Output stage switching device; synchronized with DSP-controlled SVPWM to minimize harmonic distortion.

Use Value: Soft-recovery diode limits dv/dt during commutation, reducing EMI filter size by 30% and meeting CISPR 11 Class B emissions.

Power Factor Correction (PFC)

General-Purpose Inverters

Use Scenario: Boost PFC front-end in 3 kW telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Active switch in continuous conduction mode (CCM) boost converter; operates at 50–100 kHz.

Use Value: Low Q_g (150 nC) and fast turn-off (t_f = 104 ns) enable high-efficiency operation above 98% at full load.

Use Scenario: HVAC compressor inverter driving 3-phase induction motor in variable-speed air handling units.

IC Role / Device Role / Timing Role: Main power switch in 2-level voltage source inverter; controlled via space vector modulation.

Use Value: Tight V_CE(sat) distribution ensures consistent torque ripple across production units; 175 °C rating supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	600 V rating, higher V_CE(sat) = 2.2 V @ 50 A, no integrated diode	Requires external ultrafast diode; less suitable for space-constrained PFC designs	Select when lower cost and 600 V rating suffice, and board layout accommodates discrete diode placement.
Infineon IKW50N65ES5	650 V, 50 A, V_CE(sat) = 1.7 V @ 50 A, integrated diode with t_rr = 210 ns	Higher diode recovery time increases E_rr by ~40%, demanding larger snubbers in high-dv/dt applications	Prefer for cost-sensitive motor drives where slightly higher diode loss is acceptable and layout allows snubber integration.

Compared with IXGN50N60B3 and IKW50N65ES5, STGWA50M65DF2 offers superior short-circuit ruggedness (6 µs vs. 3–4 µs), tighter V_CE(sat) distribution, and faster diode recovery - making it optimal for high-reliability UPS and PFC where thermal margin and EMI control are critical.

Availability

STGWA50M65DF2 is available at Aetrix Electronics and suitable for motor control, UPS, and PFC applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for STGWA50M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's M-series IGBT portfolio, engineered specifically for high-efficiency, high-reliability inverter systems where low conduction loss, short-circuit robustness, and safe paralleling are mandatory design requirements.

FAQ

What gate resistor value is recommended for STGWA50M65DF2 in a 10 kHz motor drive?

A 6.8 Ω gate resistor is validated in the datasheet for 400 V, 50 A inductive switching with 15 V gate drive, yielding td(off) = 130 ns and Eoff = 1.57 mJ at 25 °C. For 10 kHz operation with thermal margin, this value balances switching loss and gate oscillation suppression without requiring active Miller clamping.

Does STGWA50M65DF2 require a negative gate voltage for reliable turn-off?

No. The device is fully compatible with 0 V / +15 V gate drive; its V_GE(th) range (5–7 V) and ±20 V absolute maximum rating ensure noise-immune turn-on and robust turn-off without negative bias, simplifying driver design and reducing component count.

Can STGWA50M65DF2 replace older STGW40H65FB in existing designs?

Yes - with minor layout review. Both use TO-247 package and share pinout (C-G-E), but STGWA50M65DF2 offers 25% higher current rating (50 A vs. 40 A), lower V_CE(sat), and improved short-circuit withstand (6 µs vs. 4 µs), enabling direct upgrade in thermally constrained motor drives.

How does the integrated diode's reverse recovery performance compare at elevated temperature?

At T_J = 175 °C, t_rr increases to 262 ns and Q_rr rises to 5.1 µC - a 62% increase in charge - which raises E_rr to 676 µJ. Designers must verify snubber sizing and dv/dt stress in high-temperature PFC stages using these elevated values, not room-temperature specs.

STGWA50M65DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 375 W

Switching Energy:: 880µJ (on), 1.57mJ (off)

Input Type:: Standard

Gate Charge:: 150 nC

Td (on/off) @ 25°C:: 42ns/130ns

Test Condition:: 400V, 50A, 6.8Ohm, 15V

Reverse Recovery Time (trr):: 162 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA50M65DF2 FAQ

1.How can I place an order for STGWA50M65DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA50M65DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA50M65DF2 reliable?

The price and inventory of STGWA50M65DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA50M65DF2 is usually 5 days.

3.What payment methods are accepted for STGWA50M65DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA50M65DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA50M65DF2?

STGWA50M65DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA50M65DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA50M65DF2?

For technical support, including STGWA50M65DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA50M65DF2 requirements.

6.How does Aetrix verify that STGWA50M65DF2 is sourced from the original manufacturer or authorized distributors?

All STGWA50M65DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA50M65DF2 meets industry standards.

7.What is the process for return or replacement of STGWA50M65DF2?

All STGWA50M65DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA50M65DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA50M65DF2 part is unused and in its original packaging.

Return procedure for STGWA50M65DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…