Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA50M65DF2AG

Name: STGWA50M65DF2AG
Brand: STMicroelectronics
SKU: STGWA50M65DF2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGWA50M65DF2AG

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA50M65DF2AG.pdf

Description:: AUTOMOTIVE-GRADE TRENCH GATE FIE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,609

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGWA50M65DF2AG from STMicroelectronics is an AEC-Q101 qualified 650 V, 50 A automotive-grade trench gate field-stop IGBT with integrated soft-recovery antiparallel diode in TO-247 long leads package. It delivers low V_CE(sat) = 1.7 V (typ. @ I_C = 50 A, T_J = 25 °C), 6 μs short-circuit withstand time, and R_thJC = 0.26 °C/W for IGBT and 0.52 °C/W for diode - optimized for e-compressor and automotive motor control inverters.

For engineers reviewing the STGWA50M65DF2AG datasheet, STGWA50M65DF2AG pinout, STGWA50M65DF2AG application, or STGWA50M65DF2AG equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, minimized tail current, tight parameter distribution, and 175 °C maximum junction temperature capability in high-reliability traction and thermal management systems.

Technical Context

This IGBT employs ST's proprietary M-series trench gate field-stop structure to balance low conduction loss and robust short-circuit ruggedness. Its gate threshold voltage (V_GE(th)) ranges 5–7 V with stable positive temperature coefficient, enabling predictable turn-on behavior across -55 to 175 °C operating range.

The integrated diode features soft, fast recovery (t_rr = 121.6 ns typ. @ T_J = 25 °C) and low Q_rr = 0.85 µC, minimizing switching losses and voltage overshoot during commutation in inductive motor drives. Dynamic parameters are characterized with 6.8 Ω gate resistance under 400 V bus conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage for 400 V DC-link inverters with 1.6× safety margin
I_C (T_C = 100 °C)	79 A - Continuous output current capability at 100 °C case temperature for sustained thermal operation
V_CE(sat) (T_J = 175 °C)	2.1 V - Confirmed saturation voltage at max junction temperature, critical for loss calculation at peak load
t_sc	6 μs - Short-circuit withstand time at V_CC = 400 V and T_J ≤ 150 °C, enabling robust fault protection
R_thJC (IGBT)	0.26 °C/W - Low junction-to-case thermal resistance enabling high power density in compact heatsink designs
Q_g	147 nC - Total gate charge determining driver strength requirement and switching speed trade-off
E_off (T_J = 175 °C)	2.6 mJ - Turn-off energy at max junction temperature, directly impacting thermal design of high-frequency inverters

Pinout & Package

TO-247 long leads package with isolated mounting hole; standard 3-pin configuration (Collector, Gate, Emitter) compatible with industry-standard heatsink clamping and insulation requirements.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	Electrically connected to metal tab - must be electrically isolated from heatsink unless system-level common-collector topology is used
Pin 2	Gate (G)	Control terminal requiring ±20 V absolute max rating; sensitive to ESD and requires low-inductance gate drive routing
Pin 3	Emitter (E)	Power return path for both IGBT and antiparallel diode; serves as reference for gate drive and current sensing

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including e-compressor and HVAC blower motors
Positive V_CE(sat) temperature coefficient	Enables inherent current sharing in paralleled configurations without external ballasting resistors
Minimized tail current	Reduces turn-off losses and di/dt-induced voltage spikes during hard-switching in 400 V battery systems
Soft-recovery antiparallel diode	121.6 ns t_rr with low dI_rr/dt (610 A/µs) suppresses EMI and reduces snubber stress in motor phase legs
Tight parameter distribution	Ensures consistent dynamic performance across production lots - critical for multi-phase inverter calibration

Applications

Electric Power Steering (EPS)

e-Compressor Drive

Use Scenario: High-bandwidth torque assist in 48 V or 400 V EPS inverters requiring precise phase current control and fault resilience.

IC Role / Device Role / Timing Role: Main switching device in three-phase bridge leg; handles 50 A peak phase current with <6 μs short-circuit response.

Use Value: 175 °C junction rating enables operation in confined steering column enclosures without derating; soft diode prevents voltage ringing during regenerative braking transitions.

Use Scenario: Inverter stage for EV cabin air conditioning compressors operating at 10–20 kHz PWM frequency with 400 V DC-link.

IC Role / Device Role / Timing Role: High-efficiency IGBT switch with integrated diode handling bidirectional energy flow during compressor deceleration.

Use Value: Low V_CE(sat) (1.7 V) and low E_off (2.6 mJ @ 175 °C) reduce conduction and switching losses, extending refrigerant pump runtime per kWh.

Onboard Charger (OBC) PFC Stage

Electric Heating System (PTC)

Use Scenario: Boost PFC switch in 6.6 kW bidirectional OBCs where efficiency and thermal stability impact charging speed and grid harmonics.

IC Role / Device Role / Timing Role: Fast-switching IGBT in continuous conduction mode (CCM) boost converter; operates up to 100 kHz with gate charge of 147 nC.

Use Value: Tight V_GE(th) distribution (5–7 V) ensures consistent zero-crossing detection and minimizes THD across temperature and unit variance.

Use Scenario: Solid-state relay replacement in 400 V PTC heater modules requiring rapid on/off cycling and overtemperature fault containment.

IC Role / Device Role / Timing Role: High-current switching element controlling 79 A continuous heating load at 100 °C case temperature.

Use Value: R_thJC = 0.26 °C/W allows direct mounting to aluminum heatsink without thermal interface material degradation over 10,000 cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B4	600 V rating, higher V_CE(sat) = 2.2 V @ 50 A, no integrated diode - requires external ultrafast diode	Designed for industrial UPS; lacks AEC-Q101 qualification and soft-recovery diode	Select only for non-automotive 600 V systems where diode co-location is not required
Infineon IKW50N65ES5	650 V, 50 A, similar V_CE(sat) (1.8 V), but t_sc = 5 μs and R_thJC = 0.31 °C/W	Qualified to AEC-Q101 but optimized for solar inverters - lower short-circuit margin and higher thermal resistance	Prefer when cost sensitivity outweighs 1 μs t_sc margin and 0.05 °C/W thermal penalty

Compared with IXGN50N60B4 and IKW50N65ES5, STGWA50M65DF2AG provides superior automotive readiness via AEC-Q101 validation, integrated soft diode eliminating layout complexity, and best-in-class 0.26 °C/W thermal resistance for space-constrained e-powertrain modules.

Availability

STGWA50M65DF2AG is available at Aetrix Electronics and suitable for automotive motor control, e-compressor inverters, and electric heating systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for STGWA50M65DF2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing capabilities.

This device belongs to ST's M-series IGBT portfolio, engineered specifically for automotive traction and thermal management inverters where low-loss operation, short-circuit ruggedness, and safe paralleling are mandatory.

FAQ

What is the maximum gate-emitter voltage rating for STGWA50M65DF2AG?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 μs with duty cycle <0.01. Exceeding ±20 V continuously risks permanent gate oxide damage; gate drive circuits must include clamping diodes or active regulation to maintain this limit across temperature and PCB parasitics.

Does STGWA50M65DF2AG require a negative gate voltage for reliable turn-off?

No - the device is fully functional with 0 V turn-off bias. However, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt environments such as 400 V inverter legs. The gate threshold voltage (5–7 V) ensures robust immunity to coupling transients when driven with ≥12 V turn-on and ≥5 V turn-off margins.

Can STGWA50M65DF2AG be paralleled with identical units without external current-sharing components?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution enable inherent current balancing. Parallel operation requires matched gate drive loop inductance (<5 nH difference), symmetrical thermal mounting, and individual gate resistors (6.8 Ω typical). Derating to 90% of total rated current per device is recommended for long-term reliability.

What is the significance of the "F2AG" suffix in the part number STGWA50M65DF2AG?

The "F2AG" suffix denotes ST's specific variant code indicating AEC-Q101 qualification, TO-247 long leads package, and inclusion of the soft-recovery antiparallel diode. It distinguishes this automotive-grade version from industrial variants (e.g., STGWA50M65DF2) which lack AEC-Q101 validation and may differ in test screening or wafer lot controls.

STGWA50M65DF2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 119 A

Current - Collector Pulsed (Icm):: 207 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 576 W

Switching Energy:: 1.4mJ (on), 1.8mJ (off)

Input Type:: Standard

Gate Charge:: 147 nC

Td (on/off) @ 25°C:: 29.8ns/143ns

Test Condition:: 400V, 50A, 6.8Ohm, 15V

Reverse Recovery Time (trr):: 121.6 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA50M65DF2AG FAQ

1.How can I place an order for STGWA50M65DF2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA50M65DF2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA50M65DF2AG reliable?

The price and inventory of STGWA50M65DF2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA50M65DF2AG is usually 5 days.

3.What payment methods are accepted for STGWA50M65DF2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA50M65DF2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA50M65DF2AG?

STGWA50M65DF2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA50M65DF2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA50M65DF2AG?

For technical support, including STGWA50M65DF2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA50M65DF2AG requirements.

6.How does Aetrix verify that STGWA50M65DF2AG is sourced from the original manufacturer or authorized distributors?

All STGWA50M65DF2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA50M65DF2AG meets industry standards.

7.What is the process for return or replacement of STGWA50M65DF2AG?

All STGWA50M65DF2AG units undergo pre-shipment inspection (PSI). If there is an issue with STGWA50M65DF2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA50M65DF2AG part is unused and in its original packaging.

Return procedure for STGWA50M65DF2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…