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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA60H65DFB

Name: STGWA60H65DFB
Brand: STMicroelectronics
SKU: STGWA60H65DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA60H65DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA60H65DFB.pdf

Description:: IGBT BIPO 650V 60A TO247-3

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Product details

Overview

STGWA60H65DFB from STMicroelectronics is a 650 V, 60 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-247 long leads package. It delivers low saturation voltage (1.6 V typ. @ 60 A), minimized tail current, and tight parameter distribution for safe paralleling in high-efficiency frequency converters. Designed for solar inverters and AC-DC converters operating up to 175 °C junction temperature.

For engineers reviewing the STGWA60H65DFB datasheet, STGWA60H65DFB pinout, STGWA60H65DFB application, or STGWA60H65DFB equivalent, this device supports high-frequency switching with low Eon/Eoff energy (1590 µJ / 900 µJ typ. at 25 °C), positive VCE(sat) temperature coefficient, and robust thermal resistance (RthJC = 0.4 °C/W for IGBT).

Technical Context

This IGBT employs ST's proprietary HB-series trench gate field-stop structure to balance conduction and switching losses across 1–20 kHz operating ranges. Its static characteristics include VGE(th) = 5–7 V and VCE(sat) = 1.6–1.85 V over −40 to 175 °C, enabling stable gate drive design.

Dynamic performance is defined by fast turn-off (td(off) = 210 ns typ. at 25 °C), soft diode recovery (trr = 60 ns typ., Qrr = 99 nC), and low capacitance profile (Cies = 7792 pF, Cres = 158 pF). The integrated diode exhibits dIrr/dt = 187 A/µs and Err = 68 µJ at 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
VCES	650 V - Maximum blocking voltage under zero gate bias; enables use in 600 V-class DC bus systems.
IC (TC = 100 °C)	60 A - Continuous collector current rating at 100 °C case temperature; defines thermal derating boundary.
VCE(sat) (TJ = 25 °C)	1.6 V typ. - Low conduction loss at rated current; reduces I²R heating and improves system efficiency.
Eoff (TJ = 25 °C)	900 µJ - Turn-off energy per switching cycle; determines power loss and heatsink sizing at target frequency.
trr (TJ = 25 °C)	60 ns - Diode reverse recovery time; enables hard-switching operation with minimal voltage overshoot.
RthJC (IGBT)	0.4 °C/W - Junction-to-case thermal resistance; allows direct mounting to heatsink with predictable ΔT.
Qg	306 nC - Total gate charge; determines required gate driver peak current and drive power.

Pinout & Package

STGWA60H65DFB uses the TO-247 long leads package (mechanical outline per DS9535 Fig. 32), featuring isolated tab (collector), three terminals aligned vertically: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ±20 V max drive; 306 nC total charge mandates robust gate driver with ≥2 A peak sourcing/sinking capability.
Pin 2	Collector (Tab)	Main high-side power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance current path.
Pin 3	Emitter	Reference node for gate drive and current sensing; must be routed with low inductance to minimize switching oscillation.

Key Features

Feature	Design Value
Trench gate field-stop structure	Optimizes trade-off between conduction loss (low VCE(sat)) and switching loss (fast td(off), low Ets) for 1–20 kHz converters.
Positive VCE(sat) temperature coefficient	Enables inherent current sharing during parallel operation without external ballasting resistors.
Very fast soft recovery antiparallel diode	trr = 60 ns (25 °C), Qrr = 99 nC - Reduces diode-induced voltage spikes and EMI in bridge-leg configurations.
Tight parameter distribution	Ensures consistent VCE(sat), Qg, and switching timing across production lots - critical for multi-device modules.
Max TJ = 175 °C	Supports high ambient temperature operation in enclosed solar inverter enclosures without forced air cooling.

Applications

String Solar Inverters

Central Solar Inverters

Use Scenario: DC-to-AC conversion stage in rooftop PV systems with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: High-side IGBT switch in three-phase NPC or T-type inverter leg; handles 60 A RMS output current at 16–20 kHz PWM.

Use Value: Low VCE(sat) and soft diode reduce conduction + switching losses, enabling >98.5% peak efficiency at 5 kW–10 kW power levels.

Use Scenario: Medium-voltage DC link inversion in utility-scale photovoltaic plants (500 kW–2 MW).

IC Role / Device Role / Timing Role: Paralleled IGBT in multi-level converter topology; operates at 3–8 kHz with active thermal management.

Use Value: Tight parameter spread and positive VCE(sat) TC allow stable current sharing across 4–8 devices per phase without current imbalance.

Industrial AC-DC Converters

UPS Power Stages

Use Scenario: Front-end rectifier/inverter in regenerative motor drives and industrial SMPS.

IC Role / Device Role / Timing Role: Bidirectional switch in active front-end (AFE) topology; conducts 60 A continuous with 100% duty-cycle capability.

Use Value: RthJC = 0.4 °C/W and 375 W PTOT enable compact heatsink design while maintaining TJ ≤ 150 °C under full load.

Use Scenario: Double-conversion online UPS output inverter stage delivering clean sine-wave output.

IC Role / Device Role / Timing Role: Output bridge switch handling 60 A peak current with <1 µs dead-time tolerance.

Use Value: Minimal tail current and fast tf (20 ns typ.) suppress shoot-through risk and improve waveform fidelity at 5–10 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW60H65DFB	Same die, TO-247 (standard leads); RthJC identical but lower mechanical robustness in vibration-prone environments.	Preferred for PCB-mounted designs with standard TO-247 footprint; less suitable for high-vibration industrial enclosures.	Select when board space is constrained and lead-forming is not required.
IXYS IXGN60N60A3	600 V rating, higher Qg (370 nC), slower trr (120 ns), no integrated diode - requires external freewheeling diode.	Suitable for non-paralleled, lower-frequency (<10 kHz) applications where diode softness is less critical.	Choose only if external diode integration is acceptable and gate drive capability exceeds 306 nC requirement.

Compared with STGWA60H65DFB, STGW60H65DFB offers identical electrical specs but reduced mechanical stability in long-lead stress scenarios, while IXGN60N60A3 trades integrated diode convenience and soft recovery for higher voltage margin and simpler thermal layout - making STGWA60H65DFB optimal for solar inverter paralleling and high-reliability AC-DC conversion.

Availability

STGWA60H65DFB is available at Aetrix Electronics and suitable for solar inverters (string and central), AC-DC converters, and UPS power stages requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STGWA60H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGWA60H65DFB belongs to the HB-series high-speed IGBT product line, engineered specifically for high-efficiency frequency converters where balanced conduction-switching loss and safe paralleling are mandatory.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

Based on datasheet Figure 14 and Table 5, RG = 10 Ω yields optimal Eon/Eoff balance at TJ = 175 °C. Increasing RG beyond 15 Ω raises switching time significantly (td(off) rises to 260 ns at RG = 18 Ω), risking shoot-through in bridge configurations. For 60 A operation, RG = 8–12 Ω is recommended with gate driver capable of ±2 A peak current.

Can STGWA60H65DFB be safely paralleled without external emitter resistors?

Yes - its slightly positive VCE(sat) temperature coefficient (verified in Figure 6) and tight parameter distribution (±5% VCE(sat) variation per datasheet) enable stable current sharing. Parallel operation has been validated in ST application note AN4727 for up to four devices per leg in solar inverter designs with matched gate drive and symmetrical layout.

What is the thermal derating behavior above TC = 100 °C?

Per Figure 4, IC drops linearly from 60 A at TC = 100 °C to ~40 A at TC = 125 °C and ~20 A at TC = 150 °C. This reflects junction temperature limitation (TJ ≤ 175 °C) and RthJC = 0.4 °C/W. Derating must account for actual heatsink thermal resistance and ambient airflow - no operation is rated above TC = 150 °C.

Does the integrated diode support synchronous rectification?

No - the antiparallel diode is optimized for fast, soft recovery in inductive switching (trr = 60 ns, dIrr/dt = 187 A/µs), not low VF synchronous operation. Its VF = 2.0 V (typ. @ 60 A, 25 °C) is higher than MOSFET body diodes or Schottky alternatives. It functions exclusively as a freewheeling path, not a controlled rectifier.

STGWA60H65DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 60A

Power - Max:: 375 W

Switching Energy:: 1.59mJ (on), 900µJ (off)

Input Type:: Standard

Gate Charge:: 306 nC

Td (on/off) @ 25°C:: 66ns/210ns

Test Condition:: 400V, 60A, 10Ohm, 15V

Reverse Recovery Time (trr):: 60 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGWA60H65DFB FAQ

1.How can I place an order for STGWA60H65DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA60H65DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA60H65DFB reliable?

The price and inventory of STGWA60H65DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA60H65DFB is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA60H65DFB transactions.

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STGWA60H65DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA60H65DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA60H65DFB?

For technical support, including STGWA60H65DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA60H65DFB requirements.

6.How does Aetrix verify that STGWA60H65DFB is sourced from the original manufacturer or authorized distributors?

All STGWA60H65DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA60H65DFB meets industry standards.

7.What is the process for return or replacement of STGWA60H65DFB?

All STGWA60H65DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGWA60H65DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA60H65DFB part is unused and in its original packaging.

Return procedure for STGWA60H65DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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