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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA60V60DWFAG

Name: STGWA60V60DWFAG
Brand: STMicroelectronics
SKU: STGWA60V60DWFAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA60V60DWFAG

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA60V60DWFAG.pdf

Description:: AUTOMOTIVE-GRADE TRENCH FIELD-ST

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Product details

Overview

STGWA60V60DWFAG from STMicroelectronics is an AEC-Q101 qualified automotive-grade trench gate field-stop IGBT co-packaged with a silicon carbide freewheeling diode in TO-247 long leads package. It delivers 600 V V_CES, 60 A continuous collector current at T_C = 100 °C, 1.85 V typical V_CE(sat) @ 60 A, and features tail-less switching with no reverse recovery charge from the integrated SiC diode - enabling high-efficiency totem-pole PFC and automotive DC-DC converters.

For engineers reviewing the STGWA60V60DWFAG datasheet, STGWA60V60DWFAG pinout, STGWA60V60DWFAG application, or STGWA60V60DWFAG equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, low R_thJC (0.4 °C/W), and robust 175 °C junction operation - critical for high-reliability traction inverters and on-board chargers.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure optimized for very high-frequency switching (up to ~100 kHz at full load), balancing conduction and switching losses. Its co-packaged SiC diode eliminates reverse recovery charge (Q_rr = 0 nC) and exhibits negligible temperature dependence in trr and Q_rr, unlike silicon diodes.

The device supports gate drive with ±20 V V_GE, shows stable 5–7 V V_GE(th) across –55 to 175 °C, and maintains safe operating area up to 240 A pulsed current. Thermal resistance junction-to-case is separately specified for IGBT (0.4 °C/W) and diode (0.9 °C/W), enabling independent thermal modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands 600 V blocking voltage under zero-gate condition; suitable for 400 V bus systems with margin.
I_C (continuous, T_C = 100 °C)	60 A - Sustains 60 A DC collector current at case temperature of 100 °C without derating beyond datasheet limits.
V_CE(sat) (typ., 60 A, 25 °C)	1.85 V - Low saturation voltage reduces conduction loss; enables <1.2 W conduction loss per device at 60 A.
E_off (typ., 400 V, 60 A, 175 °C)	0.78 mJ - Turn-off energy increases only modestly at high temperature, supporting stable high-frequency operation.
R_thJC (IGBT)	0.4 °C/W - Enables efficient heat transfer to heatsink; allows >300 W power dissipation at ΔT = 120 °C.
Q_rr (SiC diode, 175 °C)	700 nC - Measured reverse recovery charge (vs. 0 nC ideal); significantly lower than Si diodes (>2 µC), reducing diode switching loss.
t_rr (SiC diode, 175 °C)	400 ns - Fast, temperature-stable recovery time ensures predictable snubber design and EMI behavior.

Pinout & Package

STGWA60V60DWFAG uses TO-247 long leads package (ECOPACK® compliant) with isolated tab (collector). The package provides mechanical robustness for automotive vibration environments and high thermal conductivity via copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Controls IGBT turn-on/turn-off; requires 15 V nominal drive; ±20 V absolute max rating prevents oxide damage.
C (Pin 2, Tab)	Collector	Main high-side power terminal; electrically connected to metal tab; must be mounted to heatsink with electrical isolation.
E (Pin 3)	Emitter	Common emitter node for IGBT and cathode of integrated SiC diode; serves as reference for gate drive and current sensing.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood applications including temperature cycling, humidity, and mechanical shock per JESD22 standards.
Tight V_CE(sat) distribution	±0.25 V variation across production lot - enables reliable parallel operation without current-sharing resistors.
Positive V_CE(sat) tempco	V_CE(sat) rises with junction temperature - provides inherent current limiting and thermal stability during overload.
Integrated SiC freewheeling diode	No reverse recovery charge (Q_rr ≈ 0) and minimal dI_rr/dt - eliminates diode-induced voltage spikes and reduces EMI filter burden.
175 °C maximum junction temperature	Enables operation in high-ambient environments (e.g., engine bay, traction inverter housing) without forced cooling derating.

Applications

On-Board Charger (OBC)

Traction Inverter Stage

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 800 V EV architectures with interleaved totem-pole PFC and CLLC resonant stages.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC leg; operates at 65–100 kHz with hard-switched ZVS-assisted transitions.

Use Value: Co-packaged SiC diode eliminates body diode conduction loss and reverse recovery energy, improving PFC efficiency by ≥0.5% at full load.

Use Scenario: Auxiliary DC-DC converter (400 V → 12 V) supplying vehicle control units and battery management systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; handles 60 A peak primary current at 100 kHz.

Use Value: 0.4 °C/W R_thJC and 175 °C T_J(max) allow compact heatsink design while maintaining >95% efficiency at 3 kW output.

Automotive DC Fast Charging Module

High-Voltage Battery Disconnect Unit

Use Scenario: Front-end rectification and isolation in multi-kW charging stations requiring 600 V+ blocking capability and fast transient response.

IC Role / Device Role / Timing Role: Switching element in active rectifier stage; subjected to repetitive 240 A pulsed current during fault clearing.

Use Value: 240 A I_CP rating and 375 W P_TOT support short-duration surge handling without thermal runaway.

Use Scenario: Solid-state contactor replacement in high-voltage battery packs for pre-charge, isolation, and emergency disconnect functions.

IC Role / Device Role / Timing Role: Main power switch with integrated freewheeling path; conducts 60 A continuously during drive mode and clamps inductive kick during open-circuit events.

Use Value: Integrated SiC diode provides controlled, low-loss freewheeling without external components - reducing BOM count and failure points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency automotive IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60A4	600 V/60 A Si IGBT with separate Si diode; higher V_CE(sat) (2.2 V typ.), no integrated SiC diode; R_thJC = 0.55 °C/W.	Lacks co-packaged SiC diode - requires external SiC or Si fast diode, increasing layout complexity and EMI risk.	Preferred where cost sensitivity outweighs efficiency gain and thermal margin is available.
Infineon IKW40N60H3	600 V/40 A TRENCHSTOP™ IGBT; V_CE(sat) = 1.6 V (typ.) but rated only to 150 °C T_J; no integrated diode.	Lower current rating and junction temperature limit restrict use in sustained 60 A automotive applications above 105 °C ambient.	Suitable for space-constrained auxiliary converters where peak current ≤40 A and thermal envelope permits.

Compared with IXGN60N60A4 and IKW40N60H3, STGWA60V60DWFAG uniquely combines 60 A rating, 175 °C operation, and integrated SiC freewheeling - delivering superior thermal headroom and system-level efficiency in high-power automotive converters without external diode compromises.

Availability

STGWA60V60DWFAG is available at Aetrix Electronics and suitable for automotive on-board chargers, traction auxiliary converters, high-voltage DC fast charging modules, and battery disconnect units requiring stable component supply across extended product lifecycles.

Supply support for STGWA60V60DWFAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's V-series automotive IGBT portfolio, engineered specifically for high-frequency, high-efficiency power conversion in electric vehicle powertrain and charging systems - emphasizing thermal robustness, paralleling safety, and integrated SiC co-packaging.

FAQ

What gate resistor value is recommended for optimal switching performance?

A 4.7 Ω gate resistor is validated in the datasheet for 400 V, 60 A inductive switching tests, yielding balanced E_on/E_off and manageable dv/dt. Lower values (≤2.2 Ω) reduce switching loss but increase EMI and gate driver stress; higher values (>10 Ω) suppress ringing but raise total switching energy by up to 40% at 175 °C.

Can STGWA60V60DWFAG be paralleled reliably without external current-sharing components?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±0.25 V V_CE(sat)) enable natural current sharing. Parallel operation has been verified with matched gate drive and symmetrical PCB layout; no emitter resistors required for up to four devices in automotive OBC designs.

Does the integrated SiC diode require separate gate control or biasing?

No - the SiC diode is uncontrolled and operates passively as a freewheeling path. It shares the emitter terminal with the IGBT and requires no additional drive circuitry. Its zero reverse recovery charge eliminates need for snubbers or active commutation control.

What is the maximum allowable gate-emitter voltage during transient conditions?

The absolute maximum V_GE is ±20 V per datasheet Table 1. Transient overshoot exceeding +15 V or –10 V must be clamped using bidirectional TVS diodes (e.g., SMAJ15A) at the gate terminal to prevent oxide breakdown, especially during high-di/dt switching in high-inductance layouts.

STGWA60V60DWFAG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 60A

Power - Max:: 375 W

Switching Energy:: 1.02mJ (on), 370µJ (off)

Input Type:: Standard

Gate Charge:: 314 nC

Td (on/off) @ 25°C:: 35ns/190ns

Test Condition:: 400V, 60A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 200 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA60V60DWFAG FAQ

1.How can I place an order for STGWA60V60DWFAG through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA60V60DWFAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA60V60DWFAG reliable?

The price and inventory of STGWA60V60DWFAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA60V60DWFAG is usually 5 days.

3.What payment methods are accepted for STGWA60V60DWFAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA60V60DWFAG transactions.

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4.How is shipping managed for STGWA60V60DWFAG?

STGWA60V60DWFAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA60V60DWFAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA60V60DWFAG?

For technical support, including STGWA60V60DWFAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA60V60DWFAG requirements.

6.How does Aetrix verify that STGWA60V60DWFAG is sourced from the original manufacturer or authorized distributors?

All STGWA60V60DWFAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA60V60DWFAG meets industry standards.

7.What is the process for return or replacement of STGWA60V60DWFAG?

All STGWA60V60DWFAG units undergo pre-shipment inspection (PSI). If there is an issue with STGWA60V60DWFAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA60V60DWFAG part is unused and in its original packaging.

Return procedure for STGWA60V60DWFAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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