STMicroelectronics STGWA75H65DFB2

Overview

STGWA75H65DFB2 from STMicroelectronics is a 650 V, 75 A high-speed trench gate field-stop IGBT with co-packaged soft-recovery diode in TO-247 long leads package. It delivers low V_CE(sat) = 1.55 V (typ. at I_C = 75 A, T_J = 25 °C), tight parameter distribution, and minimized tail current for high-efficiency switching in DC fast charging stations and solar inverters.

For engineers reviewing the STGWA75H65DFB2 datasheet, STGWA75H65DFB2 pinout, STGWA75H65DFB2 application, or STGWA75H65DFB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery charge (Q_rr = 923 nC at T_J = 25 °C), thermal resistance (R_thJC = 0.42 °C/W), switching energy (E_on = 1428 µJ, E_off = 1050 µJ), and safe operating area at T_J = 175 °C.

Technical Context

This IGBT employs ST's proprietary HB2 series trench gate field-stop structure optimized for conduction loss reduction at low currents and lower total switching energy. Its positive V_CE(sat) temperature coefficient enables stable parallel operation, while the integrated diode features very fast soft recovery (t_rr = 88 ns) and low dI_rr/dt (1166 A/µs).

The device operates across T_J = –55 to 175 °C with rated V_CES = 650 V and continuous I_C = 71 A at T_C = 100 °C. Dynamic performance is characterized under standardized inductive load conditions (V_CC = 400 V, I_C = 75 A, R_G = 2.2 Ω), confirming turn-off delay t_d(off) = 100 ns and current fall time t_f = 36 ns at 25 °C.

Key Specifications

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected), 3-pin configuration. Standardized mechanical outline per DS13215 Rev 4 Figure 31; creepage/clearance compliant for industrial isolation requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IXGN75N60B3 and IKW75N65ES5, STGWA75H65DFB2 offers superior trade-off between conduction loss (1.55 V), diode softness (Q_rr = 923 nC), and thermal performance (R_thJC = 0.42 °C/W), making it optimal for high-density, high-frequency power conversion where efficiency and thermal management are critical.

Availability

STGWA75H65DFB2 is available at Aetrix Electronics and suitable for welding inverters, solar string inverters, and uninterruptable power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGWA75H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's HB2 series of high-speed trench gate field-stop IGBTs, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy, EV infrastructure, and industrial motor drives.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 2.2 Ω for characterization, and Figure 20 shows td(off) increases from 100 ns to 140 ns when R_G rises to 20 Ω. For hard-switched applications above 15 kHz, R_G should not exceed 5.6 Ω to maintain E_off < 1300 µJ and avoid excessive voltage overshoot. Higher values require gate driver current capability ≥ 2 A peak.

Can STGWA75H65DFB2 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (Figure 5) ensures natural current balancing across paralleled units. Layout must ensure matched gate loop inductance and symmetrical emitter connections; ST recommends ≤ 10 nH difference in gate-emitter loop inductance per unit to prevent dynamic imbalance at di/dt > 1000 A/µs.

How does the diode's reverse recovery behavior change at elevated temperature?

At T_J = 175 °C, Q_rr increases to 5431 nC and t_rr extends to 162 ns (Table 6), raising E_off by 68% versus 25 °C. This necessitates derating switching frequency or increasing snubber energy absorption in high-ambient applications like outdoor EV chargers.

Is the TO-247 long leads package RoHS-compliant and halogen-free?

Yes-the device carries ECOPACK2 certification per ST's environmental compliance program, meeting RoHS Directive 2011/65/EU and JEDEC JS709C halogen-free requirements. Lead finish is matte tin, and packaging uses lead-free solder-compatible materials per DS13215 Section 4.