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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA80H65DFB

Name: STGWA80H65DFB
Brand: STMicroelectronics
SKU: STGWA80H65DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA80H65DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA80H65DFB.pdf

Description:: IGBT BIPO 650V 80A TO247-3

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Product details

Overview

STGWA80H65DFB from STMicroelectronics is a trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode, rated for 650 V V_CES, 80 A continuous collector current at T_C = 100 °C, and 1.6 V typical V_CE(sat) @ 80 A/15 V_GE. It operates up to 175 °C junction temperature and is optimized for high-frequency photovoltaic inverters and industrial DC-AC conversion stages.

For engineers reviewing the STGWA80H65DFB datasheet, STGWA80H65DFB pinout, STGWA80H65DFB application, or STGWA80H65DFB equivalent, key selection criteria include its minimized tail current, tight parameter distribution enabling safe paralleling, low R_thJC (0.32 °C/W), and diode reverse recovery charge (Q_rr = 1105 nC @ 25 °C) in inductive switching conditions.

Technical Context

This IGBT employs ST's proprietary HB-series trench gate + field-stop architecture to balance conduction and switching losses. Its slightly positive V_CE(sat) temperature coefficient and tight parameter spread support stable parallel operation without external current-sharing resistors.

The integrated diode features very fast soft recovery (t_rr = 85 ns typ., Q_rr = 1105 nC @ 25 °C), low forward voltage (V_F = 1.9 V typ. @ 80 A), and controlled dI_rr/dt (722 A/µs) to reduce EMI and voltage overshoot in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under open-gate condition; supports 400–600 V DC bus designs with margin.
I_C (continuous, T_C = 100 °C)	80 A - Rated output current at practical heatsink temperature; enables compact 10–15 kW inverter stages.
V_CE(sat) (typ., 80 A, 25 °C)	1.6 V - Low conduction loss; reduces I²R heating and improves efficiency at rated load.
E_off (typ., 400 V, 80 A, 10 Ω)	1.5 mJ - Measured turn-off energy under standard inductive test; defines snubber and gate drive power requirements.
t_rr (diode, 80 A, 400 V, 25 °C)	85 ns - Fast reverse recovery time; limits voltage spike and commutation loss during freewheeling.
R_thJC (IGBT)	0.32 °C/W - Low thermal resistance from junction to case; allows higher power density with standard TO-247 heatsinking.
T_J(max)	175 °C - Maximum operating junction temperature; supports high ambient or thermally constrained environments.

Pinout & Package

STGWA80H65DFB uses the TO-247 long leads package (JEDEC TO-247-3L variant with extended lead length per Table 10), featuring isolated tab (collector), center lead (emitter), and left lead (gate). The package enables improved mechanical stability and thermal interface consistency in high-vibration or high-power-density modules.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Gate (G)	Control terminal; requires ≤ ±20 V gate-emitter voltage; low input capacitance (C_ies = 10524 pF) demands robust gate driver current capability.
Lead 2 (center)	Emitter (E)	Reference node for gate drive and current sensing; carries full load current and diode freewheeling current.
Tab (mounting surface)	Collector (C)	High-side power terminal; electrically connected to heatsink; must be insulated from chassis unless system design permits common-collector topology.

Key Features

Feature	Design Value
Minimized tail current	Reduces turn-off energy (E_off = 1.5 mJ) and associated heat generation during hard switching.
Tight parameter distribution	Enables direct paralleling of multiple devices without external emitter resistors or active current balancing.
Very fast soft recovery diode	Q_rr = 1105 nC and t_rr = 85 ns minimize commutation loss and dv/dt-induced false triggering.
Low thermal resistance (R_thJC)	0.32 °C/W for IGBT die allows >400 W dissipation at ΔT = 125 °C, supporting high-power density layouts.
Positive V_CE(sat) tempco	Ensures inherent current sharing in parallel configurations as temperature rises, improving system reliability.

Applications

Photovoltaic Inverters

Industrial Motor Drives

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in 2-level or 3-level NPC inverter legs; handles 16–20 kHz PWM with synchronous rectification via integrated diode.

Use Value: High-speed switching (t_d(off) = 280 ns) and low E_ts (3.6 mJ) directly improve inverter efficiency above 98.5% at full load.

Use Scenario: Variable-frequency drives controlling induction motors in HVAC, pumps, and compressors.

IC Role / Device Role / Timing Role: Output stage switch in 6-pulse inverter bridge; conducts motor phase current and recirculates reactive energy via antiparallel diode.

Use Value: Soft-recovery diode (t_rr = 85 ns) suppresses voltage overshoot during regenerative braking, reducing snubber size and EMI filter cost.

UPS Systems

Induction Heating

Use Scenario: Online double-conversion UPS delivering clean sine-wave output during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow between battery bank and AC output; operates in hard-switched mode at 8–12 kHz.

Use Value: 175 °C T_J(max) and low R_thJC allow sustained overload capacity (240 A pulsed) during battery discharge transients.

Use Scenario: Medium-frequency resonant inverters (20–50 kHz) supplying power to induction cooktops or metal melting coils.

IC Role / Device Role / Timing Role: Half-bridge switch managing high di/dt (1270 A/µs) and zero-voltage switching transitions; diode handles resonant tank current reversal.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across paralleled devices in multi-kW systems, preventing thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN80N60B3	600 V rating, higher V_CE(sat) (1.8 V typ.), no integrated diode; requires external ultrafast diode.	Lacks monolithic diode integration; increases PCB area and layout complexity for freewheeling path.	Prefer when system already uses discrete diodes or requires separate diode optimization.
Infineon IKW80N65ES5	650 V, 80 A, similar V_CE(sat) (1.65 V), but slower t_rr (120 ns) and higher Q_rr (1800 nC).	Higher diode recovery loss increases E_off by ~0.8 mJ in same test conditions, reducing efficiency at high frequency.	Acceptable where switching frequency ≤ 10 kHz or thermal margin exists; avoid for >15 kHz PV inverters.

Compared with IXGN80N60B3 and IKW80N65ES5, STGWA80H65DFB delivers superior system-level efficiency in high-frequency inverter designs due to its monolithic soft-recovery diode, lower total switching loss (3.6 mJ), and tighter parameter spread enabling simpler paralleling-without requiring external diodes or derating for mismatch.

Availability

STGWA80H65DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STGWA80H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STGWA80H65DFB belongs to ST's HB-series IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control systems.

FAQ

What is the maximum gate-emitter voltage rating for STGWA80H65DFB?

The absolute maximum gate-emitter voltage is ±20 V, as specified in Table 2. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and fast switching. Gate leakage current remains below 250 nA at ±20 V, confirming stable insulation integrity.

Does STGWA80H65DFB require an external freewheeling diode?

No. STGWA80H65DFB integrates a very fast soft-recovery antiparallel diode with t_rr = 85 ns and Q_rr = 1105 nC at 25 °C. This monolithic diode is fully rated for the device's 80 A continuous forward current and 240 A pulsed current, eliminating the need for external diodes in standard inverter leg configurations.

How does the TO-247 long leads variant differ from standard TO-247 in thermal performance?

The TO-247 long leads package (per Table 10) maintains identical R_thJC = 0.32 °C/W as the standard TO-247, since thermal path depends on die-to-case interface, not lead length. However, longer leads improve mechanical compliance during board flexure and simplify automated insertion in through-hole assembly, with no electrical or thermal trade-off.

Can STGWA80H65DFB be paralleled with other IGBTs in the same HB series?

Yes. Its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (confirmed in datasheet Figure 7 and text) enable stable current sharing without emitter resistors. ST explicitly states "safe paralleling" as a feature, validated under real-world thermal gradients up to 175 °C junction temperature.

STGWA80H65DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 80A

Power - Max:: 469 W

Switching Energy:: 2.1mJ (on), 1.5mJ (off)

Input Type:: Standard

Gate Charge:: 414 nC

Td (on/off) @ 25°C:: 84ns/280ns

Test Condition:: 400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr):: 85 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA80H65DFB FAQ

1.How can I place an order for STGWA80H65DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA80H65DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA80H65DFB reliable?

The price and inventory of STGWA80H65DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA80H65DFB is usually 5 days.

3.What payment methods are accepted for STGWA80H65DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA80H65DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA80H65DFB?

STGWA80H65DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA80H65DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA80H65DFB?

For technical support, including STGWA80H65DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA80H65DFB requirements.

6.How does Aetrix verify that STGWA80H65DFB is sourced from the original manufacturer or authorized distributors?

All STGWA80H65DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA80H65DFB meets industry standards.

7.What is the process for return or replacement of STGWA80H65DFB?

All STGWA80H65DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGWA80H65DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA80H65DFB part is unused and in its original packaging.

Return procedure for STGWA80H65DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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