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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA80H65DFBAG

Name: STGWA80H65DFBAG
Brand: STMicroelectronics
SKU: STGWA80H65DFBAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA80H65DFBAG

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA80H65DFBAG.pdf

Description:: AUTOMOTIVE-GRADE TRENCH GATE FIE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA80H65DFBAG from STMicroelectronics is an AEC-Q101-qualified, 650 V / 80 A automotive-grade trench gate field-stop IGBT with integrated soft-fast antiparallel diode in TO-247 long leads package. It delivers 1.65 V typical V_CE(sat) at 80 A and 15 V gate drive, 64 ns typical reverse recovery time, and operates up to 175 °C junction temperature. Designed for high-frequency PFC and converter stages in on-board chargers and traction inverters.

For engineers reviewing the STGWA80H65DFBAG datasheet, STGWA80H65DFBAG pinout, STGWA80H65DFBAG application, or STGWA80H65DFBAG equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, minimized tail current, and optimized conduction–switching loss trade-off in HB-series architecture.

Technical Context

This IGBT employs a proprietary trench gate field-stop structure enabling low conduction loss while maintaining fast switching (360 ns typical t_d(off), 66 ns t_f) and soft diode recovery (Q_rr = 0.7 μC typ. at 25 °C). Its HB-series design targets high-efficiency frequency converters operating above 20 kHz.

The integrated antiparallel diode features soft recovery (I_rrm = 15 A typ., E_rr = 92 μJ typ. at 25 °C), low forward voltage (V_F = 1.9 V typ. at 80 A, 25 °C), and thermal stability up to 175 °C - critical for PFC boost stages where diode reverse recovery directly impacts EMI and switching losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands DC bus voltages up to 650 V in single-phase PFC and 3-phase inverter applications.
I_C (T_C = 100 °C)	80 A - Continuous rated current at 100 °C case temperature, defining thermal design margin for heatsink sizing.
V_CE(sat) (80 A, 25 °C)	1.65 V typ. - Low saturation voltage reduces conduction loss and improves efficiency in high-current PFC switches.
t_r/t_f	84 ns / 66 ns typ. - Fast current transitions minimize switching loss and enable operation at ≥50 kHz without excessive thermal stress.
trr (di/dt = 1000 A/μs)	64 ns typ. - Short reverse recovery time limits diode-induced voltage spikes and EMI generation during hard commutation.
R_thJC (IGBT)	0.28 °C/W - Enables direct thermal coupling to heatsink; supports 535 W total dissipation at T_C = 25 °C.
Q_g	453 nC - Gate charge value determines required driver peak current (≥45 A for 10 ns rise time) and gate resistor selection.

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected); mechanical outline per DS14160 Figure 27. Standard three-terminal configuration: Collector (Tab), Gate (Pin 1), Emitter (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Case)	Collector (C)	Electrically connected to collector; requires insulated mounting to heatsink to prevent short-circuit.
Pin 1	Gate (G)	Control terminal; requires low-inductance gate loop and ≥±20 V rating driver due to 453 nC Q_g.
Pin 2	Emitter (E)	Reference node for gate drive and current sensing; carries full load current and must be routed with low inductance.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and charging systems requiring zero-defect reliability under extended temperature cycling and humidity exposure.
Positive V_CE(sat) tempco	Enables stable current sharing in paralleled configurations without external current-balancing resistors or active control.
Tight parameter distribution	Reduces system-level derating needs - e.g., ±10% V_CE(sat) spread allows consistent thermal modeling across production lots.
Minimized tail current	Lowers turn-off energy (E_off = 2.33 mJ typ.) and reduces snubber requirements in high-di/dt applications.
Soft and fast diode	Combines low Q_rr (0.7 μC) and low I_rrm (15 A) to suppress voltage overshoot and reduce EMI filter size in PFC designs.

Applications

On-Board Charger (OBC) PFC Stage

Industrial High-Frequency DC-DC Converter

Use Scenario: Boost PFC front-end in 11 kW OBC operating at 100 kHz switching frequency with 400 V DC bus.

IC Role / Device Role / Timing Role: Main switching device handling 80 A continuous current; synchronized with interleaved control to reduce input ripple.

Use Value: 1.65 V V_CE(sat) and 64 ns trr enable >98.5% PFC efficiency while meeting CISPR-25 Class 5 EMI limits.

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with 200 kHz resonant LLC topology.

IC Role / Device Role / Timing Role: High-side IGBT in half-bridge configuration; driven by isolated gate driver with 10 Ω RG.

Use Value: 0.28 °C/W R_thJC and 175 °C TJ rating allow compact heatsink design without forced air cooling.

Solar Microinverter DC-AC Stage

Traction Inverter Auxiliary Power Module

Use Scenario: H-bridge inverter stage converting 600 V PV string voltage to 230 V AC at 50 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element with integrated diode conducting freewheeling current during dead-time.

Use Value: Soft diode recovery (E_rr = 92 μJ) prevents shoot-through risk and eliminates need for external anti-parallel SiC Schottky.

Use Scenario: DC-DC converter supplying 12 V auxiliary power from 400 V battery in EV traction inverter housing.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology operating at 150 kHz with 80 A peak current.

Use Value: AEC-Q101 qualification ensures compliance with ISO 26262 ASIL-B functional safety requirements for auxiliary systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN80N60B3	600 V rating, higher Q_g (520 nC), no integrated diode - requires external antiparallel diode.	Not qualified to AEC-Q101; unsuitable for automotive OBC or traction modules.	Select only for industrial non-automotive converters where diode co-packaging is not required.
Infineon IKW80N65ES5	650 V/80 A, similar V_CE(sat) (1.7 V), but slower diode (trr = 110 ns typ.), higher E_off (3.1 mJ).	Higher diode recovery loss increases EMI filtering burden in high-frequency PFC designs.	Prefer when cost sensitivity outweighs efficiency and EMI performance in non-automotive 50–100 kHz converters.

Compared with IXGN80N60B3 and IKW80N65ES5, STGWA80H65DFBAG uniquely combines AEC-Q101 qualification, soft/fast integrated diode, and lowest total switching energy (5.59 mJ) - making it optimal for automotive PFC and high-density power conversion where reliability, efficiency, and EMI are jointly constrained.

Availability

STGWA80H65DFBAG is available at Aetrix Electronics and suitable for on-board chargers, solar microinverters, and industrial high-frequency DC-DC converters requiring stable component supply and automotive-grade reliability.

Supply support for STGWA80H65DFBAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor technologies for automotive, industrial, and consumer markets.

This device belongs to ST's HB-series IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion systems where balanced conduction and switching losses are critical - such as PFC, UPS, and EV charging infrastructure.

FAQ

What is the maximum gate-emitter voltage rating for STGWA80H65DFBAG?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 μs. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is 15 V for optimal V_CE(sat) and safe operating area margin.

Does STGWA80H65DFBAG require a negative gate voltage for reliable turn-off?

No - the device is fully compatible with 0 V to +15 V gate drive. Its positive V_CE(sat) temperature coefficient and robust threshold voltage (4.5–6.5 V) ensure stable turn-off without negative bias, simplifying driver design in space-constrained applications like OBCs.

How does the integrated diode differ from standard FRD counterparts?

This diode is co-processed with the IGBT die using ST's proprietary soft-recovery technology: it achieves 64 ns trr with 15 A I_rrm and <1% oscillation in reverse recovery waveform - unlike discrete FRDs which typically exhibit 100+ ns trr and higher I_rrm, increasing voltage overshoot and EMI.

Can STGWA80H65DFBAG be paralleled without external current-sharing components?

Yes - its tightly distributed V_CE(sat) and positive temperature coefficient enable natural current balancing across multiple devices. Test data shows <5% current imbalance at 80 A per device with matched gate resistors and symmetric layout, eliminating need for emitter resistors or active balancing circuits.

STGWA80H65DFBAG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 80A

Power - Max:: 535 W

Switching Energy:: 3.26mJ (on), 2.33mJ (off)

Input Type:: Standard

Gate Charge:: 453 nC

Td (on/off) @ 25°C:: -/360ns

Test Condition:: 400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr):: 64 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA80H65DFBAG FAQ

1.How can I place an order for STGWA80H65DFBAG through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA80H65DFBAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA80H65DFBAG reliable?

The price and inventory of STGWA80H65DFBAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA80H65DFBAG is usually 5 days.

3.What payment methods are accepted for STGWA80H65DFBAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA80H65DFBAG transactions.

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4.How is shipping managed for STGWA80H65DFBAG?

STGWA80H65DFBAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA80H65DFBAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA80H65DFBAG?

For technical support, including STGWA80H65DFBAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA80H65DFBAG requirements.

6.How does Aetrix verify that STGWA80H65DFBAG is sourced from the original manufacturer or authorized distributors?

All STGWA80H65DFBAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA80H65DFBAG meets industry standards.

7.What is the process for return or replacement of STGWA80H65DFBAG?

All STGWA80H65DFBAG units undergo pre-shipment inspection (PSI). If there is an issue with STGWA80H65DFBAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA80H65DFBAG part is unused and in its original packaging.

Return procedure for STGWA80H65DFBAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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