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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA80H65FB

Name: STGWA80H65FB
Brand: STMicroelectronics
SKU: STGWA80H65FB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA80H65FB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA80H65FB.pdf

Description:: IGBT 650V 120A 469W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA80H65FB from STMicroelectronics is a trench-gate field-stop IGBT in the HB series, rated for 650 V collector-emitter voltage and 80 A continuous collector current at T_C = 100 °C, with V_CE(sat) = 1.6 V (typ.) at I_C = 80 A and T_J = 25 °C. It features minimized tail current, tight parameter distribution, and safe paralleling capability-optimized for high-frequency photovoltaic inverters and industrial DC-AC conversion stages.

For engineers reviewing the STGWA80H65FB datasheet, STGWA80H65FB pinout, STGWA80H65FB application, or STGWA80H65FB equivalent, this device delivers verified high-speed switching performance (t_d(off) = 280 ns typ., E_off = 1.5 mJ typ. at T_J = 25 °C), low thermal resistance (R_thJC = 0.32 °C/W), and stable V_CE(sat) temperature coefficient enabling robust parallel operation in grid-tied solar systems.

Technical Context

This IGBT employs ST's proprietary trench gate + field-stop structure to balance conduction and switching losses-achieving 1.6 V V_CE(sat) at 80 A while maintaining fast turn-off (t_f = 31 ns typ.) and low total gate charge (Q_g = 414 nC). Its slightly positive V_CE(sat) temperature coefficient ensures current sharing stability under parallel configuration.

Designed for hard-switched inductive loads, it supports gate drive voltages up to ±20 V, withstands 650 V V_CES, and operates reliably from −55 °C to 175 °C junction temperature-validated per IEC 60747-9 for power semiconductor devices.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage before avalanche; enables use in 600 V-class DC bus systems (e.g., PV string inputs).
I_C (T_C = 100 °C)	80 A - Continuous current rating at case temperature of 100 °C; defines thermal design margin for heatsink sizing.
V_CE(sat) (I_C = 80 A, T_J = 25 °C)	1.6 V (typ.) - Low saturation voltage reduces conduction loss; contributes to >98% efficiency in 10–20 kHz solar inverters.
R_thJC	0.32 °C/W - Junction-to-case thermal resistance; allows direct mounting to heatsink with minimal thermal interface resistance.
Q_g	414 nC - Total gate charge; determines required gate driver peak current (e.g., ≥40 A for 10 ns rise time with 10 Ω gate resistor).
E_off (T_J = 25 °C)	1.5 mJ - Turn-off energy at 400 V, 80 A, R_G = 10 Ω; sets switching loss budget for thermal management in high-frequency operation.
t_d(off)	280 ns (typ.) - Turn-off delay time; enables precise timing control in PWM-based three-phase inverters.

Pinout & Package

STGWA80H65FB uses the TO-247 long leads package-a variant of TO-247 with extended lead length (L = 19.80–20.10 mm) for improved mechanical stability and solder joint reliability in high-vibration environments. The package features isolated tab (collector), with standard 3-pin layout optimized for high-current PCB routing and thermal pad attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 15 V nominal drive (±20 V absolute max); sensitive to ESD (IGES ≤ 250 nA at ±20 V).
2 (C)	Collector	Main high-side power terminal; electrically connected to metal tab; must be isolated from heatsink unless using insulating thermal pad.
3 (E)	Emitter	Power return path and gate reference; low-inductance connection critical to minimize switching oscillation and dV/dt-induced false triggering.

Key Features

Feature	Design Value
Trench gate + field-stop structure	Enables simultaneous optimization of V_CE(sat) and switching speed-reducing trade-off between conduction and dynamic losses.
Minimized tail current	Reduces turn-off energy (E_off) by limiting minority carrier recombination time-critical for <20 kHz hard-switched converters.
Tight parameter distribution	Ensures consistent V_CE(sat), Q_g, and t_d(off) across production lots-enabling predictable system-level loss modeling and parallel IGBT matching.
Slightly positive V_CE(sat) tempco	Provides inherent current balancing in parallel configurations-eliminates need for external emitter resistors in multi-device modules.
175 °C maximum junction temperature	Supports high ambient operation (e.g., rooftop PV enclosures) and extends lifetime under thermal cycling stress per JEDEC JESD22-A108.

Applications

Photovoltaic String Inverters

Industrial Motor Drives

Use Scenario: DC-AC conversion stage in single-phase or three-phase transformerless PV inverters operating at 16–20 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in H-bridge or NPC topology; handles full DC input current (up to 80 A) with low conduction loss and controlled EMI via fast, low-tail switching.

Use Value: Achieves >98.5% peak efficiency at 5 kW output due to 1.6 V V_CE(sat) and 3.6 mJ total switching energy (E_ts) at 25 °C.

Use Scenario: Output stage of variable-frequency drives for HVAC compressors and pumps, operating at 2–8 kHz with 600 V DC bus.

IC Role / Device Role / Timing Role: Main inverter switch; conducts motor phase current during active PWM states and blocks reverse recovery voltage during freewheeling.

Use Value: Enables compact heatsink design via 0.32 °C/W R_thJC and supports safe paralleling for 15–30 kW systems without current-sharing resistors.

Uninterruptible Power Supplies (UPS)

Induction Heating Systems

Use Scenario: Bidirectional DC-AC inverter in online double-conversion UPS units delivering clean 50/60 Hz sine wave output.

IC Role / Device Role / Timing Role: IGBT in full-bridge inverter leg; switches at 4–8 kHz with strict dead-time control to prevent shoot-through.

Use Value: Tight parameter distribution ensures matched switching behavior across all six switches-minimizing output THD and improving waveform fidelity.

Use Scenario: Resonant half-bridge inverter in domestic and commercial induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element in ZVS topology; must sustain rapid di/dt (1270 A/µs) and tolerate high dV/dt during zero-voltage transitions.

Use Value: Low C_res (215 pF) and fast t_r/t_f (52 ns / 31 ns) reduce switching losses and enable reliable ZVS operation up to 50 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN80N60B3	Higher V_CE(sat) (1.8 V typ. @ 80 A), higher Q_g (480 nC), TO-247 package without long leads.	Limited suitability for vibration-prone PV mounting; less optimal for parallel operation due to wider V_CE(sat) spread.	Prefer STGWA80H65FB where mechanical robustness and tight parameter matching are required.
Infineon IKW80N65ES5	Lower E_off (1.2 mJ typ.), but higher R_thJC (0.42 °C/W); co-packed anti-parallel diode included.	Better for soft-switching topologies; diode integration simplifies layout but increases cost and reduces flexibility in discrete diode selection.	Select STGWA80H65FB when external ultrafast diode selection (e.g., STTH1608D) is preferred for tailored recovery characteristics.

Compared with IXGN80N60B3 and IKW80N65ES5, STGWA80H65FB offers superior thermal performance (0.32 vs. ≥0.42 °C/W), tighter V_CE(sat) distribution for parallel reliability, and long-lead mechanical stability-making it optimal for outdoor, high-reliability solar and industrial inverter designs.

Availability

STGWA80H65FB is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for Class B and Class C industrial programs.

Supply support for STGWA80H65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, power devices, and microcontrollers for industrial, automotive, and consumer markets.

STGWA80H65FB belongs to the HB-series high-speed IGBT product line-engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial automation systems where conduction-loss minimization and switching-speed consistency are critical.

FAQ

What is the maximum recommended gate resistor value for STGWA80H65FB in a 20 kHz PV inverter?

The datasheet specifies t_d(on) and t_d(off) tested with R_G = 10 Ω. At 20 kHz, gate resistor should be selected to limit dV/dt to ≤50 V/ns and ensure t_f ≤ 40 ns. For typical 15 V gate drive, R_G = 8–12 Ω balances switching loss and EMI; values >15 Ω increase E_off by >25% per Figure 15.

Does STGWA80H65FB include an integrated anti-parallel diode?

No. STGWA80H65FB is a discrete IGBT without an integrated diode. External ultrafast diodes-such as STTH1608D or MUR1560-are required for freewheeling paths in bridge topologies. This enables independent optimization of diode recovery characteristics for reduced EMI and system-level efficiency.

Can STGWA80H65FB be safely paralleled with STGW80H65FB?

Yes-both share identical die and electrical specs, differing only in lead length (TO-247 long leads vs. standard TO-247). Thermal and electrical matching is confirmed by identical V_CE(sat) tempco and parameter distribution data in Tables 4–6. Ensure symmetrical PCB layout and gate drive to maintain current balance.

What is the minimum gate-emitter voltage required to fully turn on STGWA80H65FB at 80 A?

V_GE(th) is specified as 5–7 V (min–max) at I_C = 1 mA. For full conduction at I_C = 80 A, V_GE ≥ 15 V is required per datasheet test conditions (Table 4). Operation below 13 V risks elevated V_CE(sat) (>2.0 V) and thermal runaway under load.

STGWA80H65FB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 80A

Power - Max:: 469 W

Switching Energy:: 2.1mJ (on), 1.5mJ (off)

Input Type:: Standard

Gate Charge:: 414 nC

Td (on/off) @ 25°C:: 84ns/280ns

Test Condition:: 400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA80H65FB FAQ

1.How can I place an order for STGWA80H65FB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA80H65FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA80H65FB reliable?

The price and inventory of STGWA80H65FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA80H65FB is usually 5 days.

3.What payment methods are accepted for STGWA80H65FB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA80H65FB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA80H65FB?

STGWA80H65FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA80H65FB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA80H65FB?

For technical support, including STGWA80H65FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA80H65FB requirements.

6.How does Aetrix verify that STGWA80H65FB is sourced from the original manufacturer or authorized distributors?

All STGWA80H65FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA80H65FB meets industry standards.

7.What is the process for return or replacement of STGWA80H65FB?

All STGWA80H65FB units undergo pre-shipment inspection (PSI). If there is an issue with STGWA80H65FB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA80H65FB part is unused and in its original packaging.

Return procedure for STGWA80H65FB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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