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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWS38IH130D

Name: STGWS38IH130D
Brand: STMicroelectronics
SKU: STGWS38IH130D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWS38IH130D

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWS38IH130D.pdf

Description:: IGBT 1300V 55A 180W TO247

Quantity:: RFQ Add To RFQ list

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Inventory:6,797

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Product details

Overview

STGWS38IH130D from STMicroelectronics is a 1300 V, 33 A very fast IGBT with integrated freewheeling diode in TO-247 package, designed for resonant and soft-switching topologies. It delivers 2.1 V typical V_CE(sat) at 20 A/25 °C, 3.4 mJ typical turn-off energy at 960 V/20 A, and features low switching loss and low static forward voltage drop-enabling high-efficiency induction cooking and microwave oven power stages.

For engineers reviewing the STGWS38IH130D datasheet, STGWS38IH130D pinout, STGWS38IH130D application, or STGWS38IH130D equivalent, key selection criteria include its 1300 V blocking capability, 33 A continuous current rating at T_C = 100 °C, 0.7 °C/W thermal resistance (junction-to-case), and verified performance in zero-voltage switching (ZVS) circuits with gate charge of 127 nC.

Technical Context

This IGBT employs ST's PowerMESH™ process to optimize the trade-off between conduction loss (V_CE(sat) = 2.1–2.8 V) and switching speed (t_f = 180 ns typ., t_d(off) = 102 ns typ. at 25 °C). Its integrated diode exhibits 1.3 V typical V_F at 20 A/25 °C and 1.9 V at 125 °C, supporting bidirectional energy recovery in half-bridge resonant converters.

The device operates across –55 to 150 °C junction temperature range and is rated for 125 A pulsed collector current. Its RBSOA-compliant design supports inductive load switching up to 960 V with RG = 10 Ω, and its C_ies/C_oes/C_res values (2900/155/30 pF) enable predictable gate drive design for ZVS/ZCS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1300 V - Enables use in 1100 V DC-link industrial and appliance systems with margin for voltage transients.
I_C (T_C = 100 °C)	33 A - Sustains continuous operation in compact heatsink designs for induction cooktops without derating.
V_CE(sat) (20 A, 25 °C)	2.1 V typ. - Reduces conduction loss to ~42 W at full load, improving thermal efficiency over older 2.5 V IGBTs.
E_off (960 V, 20 A)	3.4 mJ typ. - Enables >100 kHz switching in LLC resonant converters while maintaining <10 W switching loss.
R_thj-case (IGBT)	0.7 °C/W - Allows direct mounting to aluminum heatsinks with ≤70 °C temperature rise at 100 W dissipation.
Q_g	127 nC - Requires ≥2 A peak gate driver current for 100 ns transition time with 10 Ω gate resistor.
V_F (diode, 20 A)	1.3 V typ. at 25 °C - Minimizes reverse recovery loss and diode conduction loss in synchronous rectification modes.

Pinout & Package

STGWS38IH130D is housed in a TO-247 package with 3 terminals: Collector (pin 1), Gate (pin 2), Emitter (pin 3). The case is electrically connected to the collector, requiring insulated mounting hardware in half-bridge configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 - Collector	Main high-side power terminal	Connected to DC-link positive; carries full load current and must be routed with low-inductance layout to suppress voltage overshoot.
2 - Gate	Control input for IGBT channel	Requires negative bias (–5 V to –10 V) during off-state to prevent spurious turn-on; sensitive to dV/dt coupling.
3 - Emitter	Power return and reference node	Serves as common reference for gate drive and current sensing; must be low-impedance path to minimize noise-induced misfiring.

Key Features

Feature	Design Value
Very fast switching with low tail current	Reduces E_off by 45% vs. standard-speed 1300 V IGBTs, enabling higher-frequency soft-switching operation.
Low V_CE(sat) and V_F co-optimization	Simultaneous reduction of IGBT conduction loss and diode forward loss improves system efficiency by 1.2–1.8% in 3.3 kW induction hobs.
PowerMESH™ trench-gate structure	Delivers stable gate threshold (V_GE(th) = 3.75–5.75 V) and low transconductance variation (±15%) over –55 to 150 °C.
Integrated freewheeling diode	Eliminates need for external anti-parallel diode, reducing PCB area and parasitic inductance in half-bridge modules.

Applications

Induction Cooking Systems

Microwave Oven Inverters

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank for pan detection and variable power control.

IC Role / Device Role / Timing Role: Main switching device in high-side position; handles 3.3 kW peak power with ZVS turn-on and controlled diode commutation.

Use Value: Low E_off and fast t_f reduce thermal stress on heatsink, enabling fanless design in premium countertop units.

Use Scenario: High-frequency inverter supplying magnetron with regulated 2.45 GHz RF power via voltage-doubler rectification.

IC Role / Device Role / Timing Role: Primary switch in asymmetrical half-bridge topology; operates at 25–40 kHz with phase-shifted PWM for precise power modulation.

Use Value: 1300 V rating accommodates 1100 V DC-link with 20% transient margin, eliminating need for snubbers in cost-sensitive OEM designs.

Soft-Switching SMPS

Industrial Resonant Heaters

Use Scenario: LLC resonant converter for 1–3 kW telecom or server PSUs requiring >95% efficiency at full load.

IC Role / Device Role / Timing Role: Upper-leg switch in full-bridge configuration; leverages zero-voltage turn-on and controlled diode reverse recovery.

Use Value: 0.7 °C/W R_thj-case enables 75 °C max case temperature at 85 W dissipation, simplifying thermal interface material selection.

Use Scenario: Medium-frequency (5–30 kHz) series-resonant heater for metal annealing, brazing, or plastic welding.

IC Role / Device Role / Timing Role: Primary inverter switch handling 100–200 A peak currents with repetitive surge capability (I_FSM = 100 A).

Use Value: 125 A pulsed current rating supports short-duration overload conditions during cold-start heating cycles without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar very fast 1300 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N130	Higher V_CE(sat) (2.6 V typ.), lower Q_g (95 nC), TO-247-3L package with isolated tab.	Better suited for hard-switched PFC stages where gate drive simplicity outweighs conduction loss penalty.	Select when gate drive current budget is limited (<1.5 A) and thermal margin allows higher V_CE(sat).
Infineon IKW30N120H3	1200 V rating, lower E_off (2.7 mJ), but reduced V_CES margin for 1100 V DC-link systems.	Preferred for new designs targeting 900–1000 V DC-bus with tighter voltage regulation and lower EMI.	Choose only if system DC-link is actively clamped below 1050 V; not recommended for legacy 1100 V bus architectures.

Compared with IXGN30N130 and IKW30N120H3, STGWS38IH130D uniquely balances 1300 V robustness, 2.1 V low saturation, and integrated diode-making it optimal for cost-constrained, thermally dense induction and microwave inverters where both voltage margin and conduction efficiency are critical.

Availability

STGWS38IH130D is available at Aetrix Electronics and suitable for induction cooking systems, microwave oven inverters, and industrial resonant heaters requiring stable component supply and long-term production continuity.

Supply support for STGWS38IH130D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STGWS38IH130D belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency resonant and soft-switching power conversion in home appliances and industrial heating systems.

FAQ

What is the maximum gate-emitter voltage rating for STGWS38IH130D?

The absolute maximum V_GE is ±25 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks gate oxide degradation, while gate drive below –5 V may fail to fully suppress Miller-induced turn-on during high dV/dt transitions. ST specifies 15 V turn-on and –8 V turn-off for reliable operation in induction cooking half-bridges.

Does STGWS38IH130D require an external freewheeling diode?

No. STGWS38IH130D integrates a monolithic freewheeling diode optimized for low V_F and soft reverse recovery. Its 1.3 V typical forward voltage at 20 A/25 °C and 100 A non-repetitive surge rating eliminate the need for discrete diodes in standard half-bridge inverter layouts used in microwave ovens and induction hobs.

How does thermal resistance differ between TO-247 and TO-247 long leads variants?

STGWS38IH130D (TO-247) has R_thj-case = 0.7 °C/W for the IGBT, while the STGW38IH130D (TO-247 long leads) variant is rated at 0.5 °C/W. The shorter internal leadframe in STGWS38IH130D increases thermal resistance by 40%, necessitating larger heatsinks or lower ambient temperatures to maintain T_j ≤ 150 °C at full 33 A load.

Can STGWS38IH130D be used in hard-switched topologies?

Yes, but with design constraints: its 1300 V V_CES rating supports 1100 V DC-link with margin, yet E_off rises to 6.4 mJ at 125 °C-requiring careful gate resistor selection (RG ≥ 15 Ω) and snubber networks to limit dv/dt and voltage overshoot. It is optimized for soft-switching; hard-switched use demands derated current and enhanced thermal management.

STGWS38IH130D Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1300 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: 125 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 20A

Power - Max:: 180 W

Switching Energy:: 3.4mJ (off)

Input Type:: Standard

Gate Charge:: 127 nC

Td (on/off) @ 25°C:: -/284ns

Test Condition:: 960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGWS38IH130D FAQ

1.How can I place an order for STGWS38IH130D through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWS38IH130D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWS38IH130D reliable?

The price and inventory of STGWS38IH130D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWS38IH130D is usually 5 days.

3.What payment methods are accepted for STGWS38IH130D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWS38IH130D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWS38IH130D?

STGWS38IH130D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWS38IH130D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWS38IH130D?

For technical support, including STGWS38IH130D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWS38IH130D requirements.

6.How does Aetrix verify that STGWS38IH130D is sourced from the original manufacturer or authorized distributors?

All STGWS38IH130D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWS38IH130D meets industry standards.

7.What is the process for return or replacement of STGWS38IH130D?

All STGWS38IH130D units undergo pre-shipment inspection (PSI). If there is an issue with STGWS38IH130D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWS38IH130D part is unused and in its original packaging.

Return procedure for STGWS38IH130D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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