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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWT20H60DF

Name: STGWT20H60DF
Brand: STMicroelectronics
SKU: STGWT20H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWT20H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: STGWT20H60DF.pdf

Description:: IGBT 600V 40A 167W TO3PF

Quantity:: RFQ Add To RFQ list

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Inventory:7,334

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Product details

Overview

STGWT20H60DF from STMicroelectronics is a 600 V, 20 A trench gate field-stop IGBT in TO-3PF package, optimized for very high frequency converters. It delivers V_CE(sat) = 1.8 V (typ.) at I_C = 20 A and T_J = 25 °C, features tail-less switching off, and supports safe paralleling due to positive V_CE(sat) temperature coefficient - deployed in photovoltaic inverters and welding equipment.

For engineers reviewing the STGWT20H60DF datasheet, STGWT20H60DF pinout, STGWT20H60DF application, or STGWT20H60DF equivalent, key selection criteria include its 1.73 °C/W R_thJC, 149 ns t_d(off) at 175 °C, tight parameter distribution, and compatibility with high-speed gate drivers in 20–100 kHz PFC and inverter stages.

Technical Context

This IGBT employs ST's proprietary V-series trench gate field-stop structure to balance conduction and switching losses. Its static characteristics include V_GE(th) = 5–7 V and I_CES ≤ 25 µA at V_CE = 600 V, enabling robust turn-off under high bus voltage.

Dynamic behavior is defined by Q_g = 116 nC, Q_gc = 50 nC, and E_off = 210 µJ at T_J = 175 °C, supporting fast, low-loss switching in hard-switched topologies with 10 Ω gate resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V without breakdown.
I_C (T_C = 100 °C)	20 A - Continuous current rating at case temperature of 100 °C.
V_CE(sat) (I_C = 20 A, T_J = 25 °C)	1.8 V (typ.) - Low conduction loss enabling high-efficiency operation in high-current PFC stages.
t_d(off) (T_J = 175 °C)	150 ns - Fast turn-off delay supports >50 kHz switching in solar inverters.
R_thJC	1.73 °C/W - Enables effective thermal coupling to heatsink in TO-3PF metal-can package.
E_off (T_J = 175 °C)	210 µJ - Low turn-off energy reduces heat generation during high-frequency PWM.
Q_g	116 nC - Gate charge level determines required driver peak current and layout loop inductance.

Pinout & Package

STGWT20H60DF is housed in a TO-3PF metal-can package with isolated tab, rated for 3.5 kV_RMS insulation between leads and heatsink. The package provides low thermal resistance and mechanical robustness for industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
G (1)	Gate	Controls IGBT conduction; requires ±20 V max gate-emitter voltage and 116 nC total charge.
C (2, TAB)	Collector (and thermal path)	Main high-side current path and primary thermal interface to heatsink via isolated metal tab.
E (3)	Emitter	Low-side reference node; carries full load current and serves as gate drive return path.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates current tail during turn-off, reducing E_off and enabling cleaner zero-voltage switching transitions.
Positive V_CE(sat) temperature coefficient	Ensures inherent current sharing when paralleled, improving system reliability without external balancing resistors.
Tight parameter distribution	Minimizes unit-to-unit variation in V_GE(th), V_CE(sat), and switching times - critical for multi-device interleaved designs.
Maximum T_J = 175 °C	Supports sustained operation in high-ambient environments such as enclosed UPS cabinets or welder enclosures.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: DC-to-AC conversion stage in string inverters operating at 16–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter bridge, handling 20 A RMS output current per phase.

Use Value: Tail-less switching and low E_off reduce thermal stress on heatsink, extending inverter lifetime in rooftop installations.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave under battery backup.

IC Role / Device Role / Timing Role: IGBT switch in bidirectional DC-link chopper and inverter stage, managing 20 A peak load current.

Use Value: 175 °C junction rating ensures stable operation during extended brownout conditions with elevated ambient temperatures.

Welding Equipment

Power Factor Correction

Use Scenario: Inverter-based arc welding power supply with 20–100 kHz resonant or hard-switched topology.

IC Role / Device Role / Timing Role: Primary switching device in full-bridge inverter driving high-frequency transformer.

Use Value: Low R_thJC (1.73 °C/W) and robust SOA enable reliable pulsed 80 A peak current delivery without thermal runaway.

Use Scenario: Active boost PFC front-end in industrial motor drives and server PSUs.

IC Role / Device Role / Timing Role: Boost switch operating at 30–100 kHz with 20 A average current.

Use Value: Tight V_CE(sat) distribution ensures consistent efficiency across parallel PFC phases, meeting EN 61000-3-2 Class A compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW20V60F	Same die, TO-247 package; R_thJC = 0.90 °C/W, higher continuous I_C (40 A @ T_C = 25 °C), but no isolation between tab and collector.	Preferred where lower thermal resistance is critical and heatsink isolation is not required.	Select when PCB layout allows non-isolated mounting and higher peak current capability is needed.
STGFW20V60F	Same die, TO-3PF package with insulated tab; identical R_thJC (1.73 °C/W) and electrical specs, but marked GFW20V60F.	Drop-in replacement with same footprint and isolation rating - used interchangeably in legacy PV inverter designs.	Choose when sourcing legacy-design-compatible units with verified qualification history in field-deployed systems.

Compared with STGWT20H60DF, STGW20V60F offers superior thermal performance but sacrifices galvanic isolation, while STGFW20V60F matches it electrically and mechanically - making the latter ideal for redesign continuity and the former for thermal-limited new layouts.

Availability

STGWT20H60DF is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGWT20H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGWT20H60DF belongs to ST's V-series trench gate field-stop IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control applications.

FAQ

What is the maximum gate-emitter voltage rating for STGWT20H60DF?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V for reliable turn-on and noise-immune turn-off. Exceeding ±20 V risks permanent gate oxide damage, especially during transient events or improper driver design.

Does STGWT20H60DF include an integrated freewheeling diode?

No - STGWT20H60DF is a standalone IGBT without an integrated diode. It is co-packed with the STGW20V60DF diode in some module variants, but this discrete device requires an external anti-parallel diode for inductive load commutation.

How does the TO-3PF package affect heatsinking requirements?

The TO-3PF's insulated metal tab enables direct mounting to a grounded heatsink without additional isolation hardware, while its 1.73 °C/W R_thJC demands minimum thermal interface material coverage and flatness ≤ 25 µm to avoid contact resistance penalties in high-power operation.

Can STGWT20H60DF be paralleled safely with other units?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution allow stable current sharing across multiple devices without external emitter resistors, provided gate drive impedance and PCB layout symmetry are matched within ±5 %.

STGWT20H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 20A

Power - Max:: 167 W

Switching Energy:: 209µJ (on), 261µJ (off)

Input Type:: Standard

Gate Charge:: 115 nC

Td (on/off) @ 25°C:: 42.5ns/177ns

Test Condition:: 400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: 90 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

STGWT20H60DF FAQ

1.How can I place an order for STGWT20H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWT20H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWT20H60DF reliable?

The price and inventory of STGWT20H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWT20H60DF is usually 5 days.

3.What payment methods are accepted for STGWT20H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWT20H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWT20H60DF?

STGWT20H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWT20H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWT20H60DF?

For technical support, including STGWT20H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWT20H60DF requirements.

6.How does Aetrix verify that STGWT20H60DF is sourced from the original manufacturer or authorized distributors?

All STGWT20H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWT20H60DF meets industry standards.

7.What is the process for return or replacement of STGWT20H60DF?

All STGWT20H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGWT20H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWT20H60DF part is unused and in its original packaging.

Return procedure for STGWT20H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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