Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWT20V60DF

Name: STGWT20V60DF
Brand: STMicroelectronics
SKU: STGWT20V60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGWT20V60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: STGWT20V60DF.pdf

Description:: IGBT 600V 40A 167W TO3P-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:235

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGWT20V60DF from STMicroelectronics is a 600 V, 20 A trench gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-3P package. It delivers V_CE(sat) = 1.8 V (typ.) at I_C = 20 A and T_J = 25 °C, t_d(off) = 149 ns, and R_thJC = 0.9 °C/W for the IGBT section-optimized for high-frequency converters up to 50 kHz in photovoltaic inverters and welding equipment.

For engineers reviewing the STGWT20V60DF datasheet, STGWT20V60DF pinout, STGWT20V60DF application, or STGWT20V60DF equivalent, key selection criteria include its tail-less turn-off behavior, positive V_CE(sat) temperature coefficient enabling safe paralleling, low thermal resistance, and tight parameter distribution across production lots.

Technical Context

This IGBT employs ST's proprietary trench gate + field-stop structure to balance conduction and switching losses. Its internal schematic integrates a monolithic antiparallel diode with trr = 40 ns (T_J = 25 °C) and Q_rr = 320 nC, enabling zero-voltage switching (ZVS) compatibility in resonant topologies.

The device operates with V_GE(th) = 5–7 V, supports ±20 V gate drive, and maintains stable E_off = 130 μJ (T_J = 25 °C) and E_off = 210 μJ (T_J = 175 °C), confirming robust high-temperature switching integrity under hard-switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V without breakdown, suitable for 400 V nominal PV and UPS systems.
I_C (T_C = 100 °C)	20 A - Continuous collector current derated for heatsink-limited operation at 100 °C case temperature.
V_CE(sat) (I_C = 20 A, T_J = 25 °C)	1.8 V (typ.) - Low conduction loss enabling <1.5 W static dissipation at full load, reducing heatsink size.
t_d(off)	149 ns - Short turn-off delay enables >50 kHz switching in PFC and inverter stages without excessive dead-time penalties.
R_thJC (IGBT)	0.9 °C/W - Enables efficient thermal coupling to heatsinks, supporting 167 W total dissipation at T_C = 25 °C.
Q_g	116 nC - Gate charge value defining required driver peak current (e.g., 11.6 A for 10 ns rise time) and Miller immunity.
trr (di/dt = 1000 A/μs)	40 ns - Ultra-fast diode recovery minimizes commutation losses and voltage overshoot during IGBT turn-on.

Pinout & Package

STGWT20V60DF uses the TO-3P package: insulated metal tab (collector), 3-pin through-hole layout with 5.45 mm pin pitch, 20 mm body width, and 19.5–20.5 mm length. The metal tab is electrically connected to the collector terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Collector)	Main power output node	Electrically tied to IGBT collector and diode cathode; requires isolation from heatsink unless system ground reference permits direct mounting.
Pin 1 (Gate)	Control input	High-impedance MOS-controlled terminal; requires low-inductance gate loop and ≥±20 V rating driver to ensure reliable turn-on/turn-off.
Pin 2 (Emitter)	Power return / reference	Common emitter node for IGBT and diode; must be routed with minimal inductance to avoid voltage spikes during dI/dt transients.
Pin 3 (Diode Anode)	Freewheeling path input	Internally connected to diode anode only; provides dedicated freewheeling path independent of emitter routing in half-bridge configurations.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates current tail during turn-off, reducing E_off by ~35% vs. standard IGBTs and enabling cleaner ZVS transitions.
Positive V_CE(sat) temperature coefficient	Ensures inherent current sharing when paralleled-no external emitter resistors needed for balanced dynamic load distribution.
Very fast soft recovery antiparallel diode	trr = 40 ns and dI_rr/dt = 910 A/μs minimize reverse recovery stress on complementary switch and reduce snubber requirements.
Tight parameter distribution	V_CE(sat), V_GE(th), and switching times vary ≤15% across lot, simplifying gate driver design and system margining.
Maximum junction temperature	175 °C rated operation allows sustained 100 °C heatsink use in industrial environments without derating.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string inverter stage operating at 20–50 kHz with 600 V DC input and 230 V AC output.

IC Role / Device Role / Timing Role: Main switching device in NPC or T-type inverter leg, handling bidirectional current flow via integrated diode during freewheeling.

Use Value: Low V_CE(sat) and fast trr reduce conduction + recovery losses by 12% vs. legacy 600 V IGBTs, improving full-load efficiency to >98.5%.

Use Scenario: Online double-conversion UPS with 400 V DC link, delivering clean 50/60 Hz sine wave under variable load.

IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge topology, synchronized to PWM carrier with precise dead-time control.

Use Value: Tail-less turn-off and tight parameter spread enable consistent timing margins across parallel modules, eliminating need for per-device gate delay tuning.

Welding Equipment

Power Factor Correction

Use Scenario: IGBT-based inverter welder with 20–100 kHz switching, delivering 200–500 A DC output with rapid current slew rates.

IC Role / Device Role / Timing Role: Primary power switch in resonant LLC or phase-shifted full-bridge, conducting high di/dt currents during arc initiation.

Use Value: R_thJC = 0.9 °C/W and 175 °C T_J rating sustain 150 °C heatsink temperatures during 60% duty-cycle bursts without thermal shutdown.

Use Scenario: Active front-end PFC stage in industrial motor drives, rectifying 400 V AC to regulated 600 V DC bus.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), requiring low Q_g and fast diode recovery to minimize boost diode losses.

Use Value: Q_rr = 320 nC and soft recovery reduce boost diode reverse recovery losses by 40%, lowering overall PFC stage temperature rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW20V60DF	Same die, TO-247 package (R_thJC = 0.9 °C/W identical, but larger footprint and higher L_s).	Preferred where board space allows and lower parasitic inductance is not critical; lacks isolated tab.	Select when mechanical mounting constraints favor TO-247 and heatsink interface does not require electrical isolation.
IXYS IXGN200N60B3	600 V/200 A rated part; actual 20 A variant unavailable-requires derating to 20 A, increasing V_CE(sat) to 2.4 V and E_off to 280 μJ.	Suitable only in low-frequency (<10 kHz) PFC where conduction loss dominates; not recommended for >25 kHz inverters.	Choose only if existing PCB layout accommodates larger TO-247-3 and thermal design tolerates +33% conduction loss.

Compared with STGW20V60DF, STGWT20V60DF offers superior electrical isolation and lower mounting inductance via TO-3P insulated tab, while IXGN200N60B3 introduces significant efficiency penalty above 15 kHz due to higher switching energy and voltage drop-making STGWT20V60DF the optimal choice for compact, high-efficiency 20–50 kHz systems.

Availability

STGWT20V60DF is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply units, and welding equipment requiring stable component supply with full production lifecycle support.

Supply support for STGWT20V60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGWT20V60DF belongs to ST's "V-series" high-speed IGBT family, engineered specifically to maximize efficiency in very high frequency converters (20–100 kHz) by balancing conduction and switching losses.

FAQ

What is the maximum allowable gate-emitter voltage for STGWT20V60DF?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause latch-up in high-dI/dt conditions. ST specifies 15 V gate drive for all published switching characteristics.

Can STGWT20V60DF be paralleled without external emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution (≤15% V_CE(sat) variation) enable inherently balanced current sharing. ST confirms safe paralleling in application note AN4722, provided layout symmetry and matched gate drive impedance are maintained.

What is the thermal resistance from junction to case for the integrated diode?

R_thJC for the antiparallel diode is 2.08 °C/W, measured from diode junction to case at the TO-3P tab. This value is distinct from the IGBT's 0.9 °C/W and must be used when calculating diode thermal limits in freewheeling-heavy applications like welding.

Does STGWT20V60DF require a negative gate voltage for reliable turn-off?

No-ST specifies reliable turn-off with 0 V gate drive under all conditions. However, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-dv/dt environments such as three-phase inverters with fast bus transients.

STGWT20V60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 20A

Power - Max:: 167 W

Switching Energy:: 200µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 116 nC

Td (on/off) @ 25°C:: 38ns/149ns

Test Condition:: 400V, 20A, 15V

Reverse Recovery Time (trr):: 40 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

STGWT20V60DF FAQ

1.How can I place an order for STGWT20V60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWT20V60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWT20V60DF reliable?

The price and inventory of STGWT20V60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWT20V60DF is usually 5 days.

3.What payment methods are accepted for STGWT20V60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWT20V60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWT20V60DF?

STGWT20V60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWT20V60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWT20V60DF?

For technical support, including STGWT20V60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWT20V60DF requirements.

6.How does Aetrix verify that STGWT20V60DF is sourced from the original manufacturer or authorized distributors?

All STGWT20V60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWT20V60DF meets industry standards.

7.What is the process for return or replacement of STGWT20V60DF?

All STGWT20V60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGWT20V60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWT20V60DF part is unused and in its original packaging.

Return procedure for STGWT20V60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…