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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWT20V60F

Name: STGWT20V60F
Brand: STMicroelectronics
SKU: STGWT20V60F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWT20V60F

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: STGWT20V60F.pdf

Description:: IGBT 600V 40A 167W TO3PF

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWT20V60F from STMicroelectronics is a 600 V, 20 A trench gate field-stop IGBT in TO-3PF package, optimized for very high frequency converters with tail-less switching off, V_CE(sat) = 1.8 V (typ.) at I_C = 20 A and T_J = 25 °C, positive V_CE(sat) temperature coefficient, and R_thJC = 1.73 °C/W - deployed in photovoltaic inverters and welding equipment.

For engineers reviewing the STGWT20V60F datasheet, STGWT20V60F pinout, STGWT20V60F application, or STGWT20V60F equivalent, key selection criteria include switching energy (E_off = 130 µJ typ. at T_J = 25 °C), safe paralleling capability, thermal resistance, and V_GE(th) distribution (5–7 V), critical for gate drive design and thermal stability in high-power industrial systems.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction loss (V_CE(sat) = 1.8 V @ 20 A) and switching loss (E_ts = 330 µJ typ. at 400 V/20 A), enabling operation up to several hundred kHz. Its positive V_CE(sat) temperature coefficient ensures current sharing stability during parallel operation.

Dynamic performance is characterized by fast turn-off (t_d(off) = 149 ns, t_f = 15 ns) and low reverse transfer capacitance (C_res = 64 pF), reducing Miller effect and improving gate control robustness under hard-switching conditions typical in PFC and UPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltage in 400 V AC input PFC stages with 50 V margin.
I_C (T_C = 100 °C)	20 A - Sustains continuous output current in air-cooled PV inverter boost stages.
V_CE(sat) (T_J = 175 °C)	2.3 V - Limits conduction loss to ≤46 W at full load, easing thermal design.
E_off (T_J = 175 °C)	210 µJ - Enables <500 kHz switching in ZVS-assisted converters without excessive loss penalty.
R_thJC	1.73 °C/W - Allows junction-to-case temperature rise of ≤120 °C at 70 W dissipation, supporting compact heatsink integration.
Q_gc	50 nC - Determines Miller charge burden on gate driver; requires ≥2 A peak drive capability for <100 ns turn-on.
V_GE(th)	5–7 V - Ensures reliable turn-on with standard 15 V gate drive while avoiding spurious conduction at elevated temperature.

Pinout & Package

STGWT20V60F is housed in a TO-3PF package with isolated metal tab (heat sink interface), offering 3.5 kV RMS insulation between leads and external heat sink. The package provides low-profile mounting and direct thermal path from die to case.

Pin/Terminal	Circuit Role	Design Meaning
G (1)	Gate	Controls IGBT conduction; requires 15 V drive with ≤20 V absolute max rating.
C (2, TAB)	Collector (case-connected)	Primary power output node; electrically tied to metal tab - must be insulated from chassis unless referenced to system ground.
E (3)	Emitter	Return path for load current; serves as local ground reference for gate drive circuitry.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates minority-carrier storage tail, reducing E_off by >30% vs. standard IGBTs and enabling cleaner zero-voltage switching transitions.
Positive V_CE(sat) temperature coefficient	Enables inherent current balancing across paralleled devices without external emitter resistors or active current sharing circuits.
Tight parameter distribution (V_GE(th), V_CE(sat))	Reduces gate drive margin requirements and simplifies thermal derating calculations across production lots.
Safe paralleling capability	Validated via SOA curves and thermal impedance data - supports multi-device modules in high-current (>60 A) welding inverters.
Low R_thJC (1.73 °C/W)	Permits higher power density in space-constrained industrial enclosures with passive or low-airflow cooling.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Boost stage in string inverters operating at 100–200 kHz with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter, handling 20 A continuous collector current with minimal conduction loss.

Use Value: Tail-less turn-off reduces E_off by 35% versus legacy IGBTs, increasing system efficiency by 0.4% at 50% load.

Use Scenario: Inverter bridge in online double-conversion UPS delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: Low-loss switching element in 3-phase H-bridge, operating at 16 kHz with sinusoidal PWM modulation.

Use Value: Positive V_CE(sat) coefficient enables stable parallel operation of four devices per phase, supporting 30 kVA output capacity.

Welding Equipment

Power Factor Correction

Use Scenario: Primary-side switch in resonant inverter for IGBT-based arc welding machines.

IC Role / Device Role / Timing Role: Hard-switched main switch in 20–50 kHz inverter driving transformer-coupled secondary rectifier.

Use Value: R_thJC = 1.73 °C/W allows 70 W dissipation with ≤120 °C ΔT, eliminating need for forced air in portable welders.

Use Scenario: Active boost switch in 3 kW telecom rectifier with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Fast-switching IGBT in continuous conduction mode (CCM) PFC stage operating at 100 kHz.

Use Value: C_res = 64 pF minimizes Miller-induced dv/dt coupling, enabling robust gate drive with 10 Ω series resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW20V60F	Same die, TO-247 package; R_thJC = 0.90 °C/W, higher P_TOT = 167 W at T_C = 25 °C.	Better suited for forced-air or liquid-cooled systems requiring higher power density.	Select when thermal interface resistance is <0.2 °C/W and heatsink mass supports lower ΔT.
IXYS IXGN20N60B3	600 V/20 A, but uses planar gate structure; V_CE(sat) = 2.4 V (typ.), E_off = 280 µJ (typ.) at same conditions.	Higher conduction loss limits use in >100 kHz designs; preferred in lower-frequency (<30 kHz) industrial motor drives.	Choose only if gate drive simplicity outweighs efficiency loss and thermal overhead.

Compared with STGW20V60F, STGWT20V60F trades 47% higher R_thJC for 3.5 kV isolation and compact TO-3PF footprint; versus IXGN20N60B3, it delivers 32% lower E_off and tighter V_GE(th) spread, making it superior for paralleled, high-frequency PFC and solar applications.

Availability

STGWT20V60F is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGWT20V60F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGWT20V60F belongs to ST's V-series trench gate field-stop IGBT family, engineered specifically for very high frequency converters where minimizing both conduction and switching losses is essential to achieving >98% system efficiency.

FAQ

What is the maximum allowable gate-emitter voltage for STGWT20V60F?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation over time, while negative bias below –10 V may cause latch-up in high-dv/dt environments. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers.

Can STGWT20V60F be used in parallel configurations without external emitter resistors?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% on V_CE(sat)) enable stable current sharing across paralleled units. However, matched gate drive layout (equal trace length/inductance) and symmetrical thermal mounting remain mandatory to prevent thermal runaway.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At t_p = 100 µs and T_J ≤ 175 °C, the SOA limits V_CE to ≤400 V at I_C = 20 A (TO-3PF). This reflects thermal inertia constraints - exceeding this boundary risks localized hot-spot formation due to insufficient time for heat diffusion from the die edge.

Does STGWT20V60F include an integrated freewheeling diode?

No - STGWT20V60F is a standalone IGBT. The datasheet references the copacked STGW20V60DF diode for reverse recovery characterization, but STGWT20V60F itself contains no monolithic diode. External ultrafast diodes (e.g., STTH30L06D) must be used in inductive switching applications.

STGWT20V60F Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 20A

Power - Max:: 167 W

Switching Energy:: 200µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 116 nC

Td (on/off) @ 25°C:: 38ns/149ns

Test Condition:: 400V, 20A, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

STGWT20V60F FAQ

1.How can I place an order for STGWT20V60F through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWT20V60F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWT20V60F reliable?

The price and inventory of STGWT20V60F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWT20V60F is usually 5 days.

3.What payment methods are accepted for STGWT20V60F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWT20V60F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWT20V60F?

STGWT20V60F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWT20V60F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWT20V60F?

For technical support, including STGWT20V60F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWT20V60F requirements.

6.How does Aetrix verify that STGWT20V60F is sourced from the original manufacturer or authorized distributors?

All STGWT20V60F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWT20V60F meets industry standards.

7.What is the process for return or replacement of STGWT20V60F?

All STGWT20V60F units undergo pre-shipment inspection (PSI). If there is an issue with STGWT20V60F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWT20V60F part is unused and in its original packaging.

Return procedure for STGWT20V60F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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