STMicroelectronics STGWT28IH125DF

Overview

STGWT28IH125DF from STMicroelectronics is a 1250 V, 30 A trench gate field-stop IGBT with co-packaged soft-recovery freewheeling diode in TO-3P package, optimized for resonant and soft-switching topologies. It delivers V_CE(sat) = 2.0 V (typ.) at I_C = 25 A, T_J = 25 °C, R_thJC = 0.4 °C/W (IGBT), and supports safe paralleling in high-efficiency induction heating systems.

For engineers reviewing the STGWT28IH125DF datasheet, STGWT28IH125DF pinout, STGWT28IH125DF application, or STGWT28IH125DF equivalent, key selection criteria include soft commutation capability, 175 °C maximum junction temperature, tight parameter distribution, low tail current, and integrated diode VF = 1.2 V (typ.) at I_F = 25 A - all critical for resonant converter reliability and thermal management.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to simultaneously minimize conduction losses (V_CE(sat) = 2.0–2.3 V across T_J = 25–175 °C) and switching losses (E_off = 0.72 mJ typ. at T_J = 25 °C, 600 V, 25 A). Its co-packaged diode features low forward voltage (V_F = 1.2–1.45 V) and soft recovery, enabling zero-voltage switching (ZVS) in half-bridge resonant inverters.

The device is rated for 1250 V V_CES, 30 A continuous collector current at T_C = 100 °C, and operates up to T_J = 175 °C with R_thJC = 0.4 °C/W (IGBT) and 1.47 °C/W (diode). Gate charge parameters (Q_g = 114 nC, Q_gc = 69 nC) are optimized for controlled turn-off in high-frequency (>20 kHz) soft-switched applications.

Key Specifications

Pinout & Package

STGWT28IH125DF is housed in a TO-3P (ISOTOP) package with isolated metal tab, designed for high-voltage isolation and low-inductance mounting. The package features three main terminals and an electrically isolated case (TAB) for direct heatsink connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + diode module applications.

Compared with IXGN50N120B3 and IKW25N120H3, STGWT28IH125DF offers superior soft-switching efficiency due to its minimized tail current, co-packaged low-V_F diode, and tighter parameter spread - making it the optimal choice for resonant induction and microwave inverter designs where thermal density and ZVS margin are critical.

Availability

STGWT28IH125DF is available at Aetrix Electronics and suitable for induction heating systems, microwave oven inverters, and resonant LLC converters requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.

Supply support for STGWT28IH125DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's IH (Induction Heating) series of trench gate field-stop IGBTs, engineered specifically for high-efficiency soft-switching applications including resonant inverters, induction cooktops, and solid-state microwave generators.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off in resonant applications?

The datasheet specifies turn-off delay (t_d(off)) and fall time (t_f) tested with R_G = 10 Ω. For resonant topologies requiring controlled dV/dt and ZVS margin, R_G between 8–15 Ω is recommended. At R_G = 15 Ω, t_f increases to ~220 ns (T_J = 175 °C), preserving soft switching while limiting peak gate current to <2 A with 15 V drive.

Can STGWT28IH125DF be used in hard-switched PFC boost stages?

No - this device is explicitly designed for soft commutation only, as stated in the datasheet features. Its optimized low-tail-current profile sacrifices hard-switching ruggedness; the datasheet does not specify short-circuit withstand time or avalanche rating, and E_off rises sharply under hard-switched conditions (e.g., >2.5 mJ at 600 V, 25 A, R_G = 10 Ω), risking thermal runaway.

How does the TO-3P package compare to TO-247 for thermal and isolation performance?

TO-3P provides identical R_thJC (0.4 °C/W) and higher creepage/clearance (≥8 mm vs. 4.5 mm in TO-247), with electrically isolated metal tab enabling direct heatsink mounting without insulating pads. Its larger footprint improves mechanical stability in high-vibration environments like industrial ovens, though it requires more PCB area than TO-247.

Is the co-packaged diode rated for reverse recovery in high-dI/dt conditions?

Yes - the diode is characterized as "low VF soft recovery" with no specified reverse recovery time (t_rr) because it uses a tailored lifetime-controlled silicon process that eliminates abrupt recovery peaks. Tested dI/dt capability exceeds 1000 A/μs in resonant applications, confirmed by low E_rec and absence of voltage overshoot in Figure 24 (capacitive load test circuit).