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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWT30H65FB

Name: STGWT30H65FB
Brand: STMicroelectronics
SKU: STGWT30H65FB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWT30H65FB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: STGWT30H65FB.pdf

Description:: IGBT 650V 30A 260W TO3PL

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWT30H65FB from STMicroelectronics is a 650 V, 30 A high-speed trench gate field-stop IGBT in TO-3PF package, optimized for photovoltaic inverters and high-frequency converters. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 30 A, T_J = 25 °C; features minimized tail current, tight parameter distribution, and safe paralleling capability enabled by slightly positive V_CE(sat) temperature coefficient.

For engineers reviewing the STGWT30H65FB datasheet, STGWT30H65FB pinout, STGWT30H65FB application, or STGWT30H65FB equivalent, key selection criteria include thermal resistance (R_thJC = 1.63 °C/W), switching energy (E_off = 293 µJ at T_J = 25 °C), gate charge (Q_g = 149 nC), and safe operating area up to 175 °C junction temperature.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses across 10–100 kHz frequency ranges. Its dynamic characteristics are characterized under standardized inductive load conditions (V_CC = 400 V, I_C = 30 A, R_G = 10 Ω, V_GE = 15 V), with turn-off delay t_d(off) = 146 ns and fall time t_f = 23 ns at T_J = 25 °C.

The device supports robust parallel operation due to its tightly distributed V_GE(th) (5–7 V) and monotonic V_CE(sat) vs. temperature behavior - increasing from 1.55 V at 25 °C to 1.75 V at 175 °C - ensuring current sharing stability under thermal stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage before avalanche; enables use in 600 V-class DC bus systems with margin.
I_C (T_C = 100 °C)	30 A - Continuous collector current rating at case temperature of 100 °C; defines usable output power in thermally constrained designs.
V_CE(sat)	1.55 V (typ., T_J = 25 °C, I_C = 30 A) - Low saturation voltage reduces conduction loss and heatsink sizing requirements.
R_thJC	1.63 °C/W - Junction-to-case thermal resistance in TO-3PF package; determines minimum heatsink thermal resistance needed for 175 °C max T_J.
E_off	293 µJ (T_J = 25 °C) - Turn-off switching energy; directly impacts gate driver power demand and system efficiency at 20+ kHz switching.
Q_g	149 nC - Total gate charge; sets minimum gate driver peak current (e.g., >15 A for 10 ns rise time) and influences drive loss.
C_ies	3659 pF - Input capacitance at V_CE = 25 V; affects gate drive loop stability and Miller effect susceptibility.

Pinout & Package

STGWT30H65FB uses the TO-3PF package - a through-hole, insulated metal-can package with integrated creepage/clearance and 3.5 kV_RMS isolation between leads and heat sink. The case (tab) serves as the collector terminal, enabling direct mounting to heatsinks without insulating pads when used with isolated mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
G (1)	Gate	Control input; requires ±20 V absolute max rating; 149 nC total charge demands robust gate driver with low impedance path.
C (2, TAB)	Collector	Main high-side power terminal; electrically connected to metal tab - must be isolated from heatsink unless using rated insulating interface.
E (3)	Emitter	Power return path; referenced to gate drive ground; layout must minimize inductance to suppress voltage spikes during switching.

Key Features

Feature	Design Value
High-speed switching series	Turn-off delay t_d(off) = 146 ns and E_ts = 444 µJ enable efficient operation up to 50 kHz in PFC and inverter stages.
Minimized tail current	Reduces E_off contribution from minority carrier recombination; critical for SiC diode co-packaged topologies (e.g., with STPSC206W).
Tight parameter distribution	V_GE(th) = 5–7 V and V_CE(sat) variation < ±5% ensure predictable current sharing in multi-device parallel configurations.
Slightly positive V_CE(sat) tempco	V_CE(sat) increases from 1.55 V @ 25 °C to 1.75 V @ 175 °C - inherently stabilizes current sharing under thermal imbalance.
Low R_thJC (TO-3PF)	1.63 °C/W allows 30 A continuous current at T_C = 100 °C while maintaining T_J ≤ 175 °C - simplifies thermal design vs. higher-R_thJC alternatives.

Applications

Photovoltaic Inverters

Power Factor Correction

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC at 16–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type inverter legs; handles bidirectional current flow during reactive power control.

Use Value: Low E_off and tight V_CE(sat) distribution maintain >98.5% peak efficiency while enabling compact heatsink design in outdoor-rated enclosures.

Use Scenario: Active boost PFC stage in industrial SMPS and UPS systems operating at 30–100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; commutates high di/dt currents with minimal voltage overshoot.

Use Value: Minimized tail current reduces turn-off loss and enables stable operation with fast-recovery SiC diodes, lowering overall system thermal load.

Welding Power Supplies

High-Frequency Converters

Use Scenario: IGBT-based inverter welders delivering regulated 100–500 A DC output with rapid current slew rates (>1000 A/ms).

IC Role / Device Role / Timing Role: Primary switching element in dual-phase resonant or hard-switched DC-DC stages; operates with 50–100 µs pulse widths.

Use Value: Safe SOA up to 1 ms at 100 V and 30 A ensures reliable short-circuit withstand during arc ignition transients without desaturation protection.

Use Scenario: Isolated DC-DC converters for EV charging stations and telecom rectifiers switching at 40–80 kHz with 600 V input.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to ZVS-assisted turn-on and hard turn-off.

Use Value: Optimized trade-off between E_on (151 µJ) and E_off (293 µJ) maximizes full-load efficiency while preserving gate drive simplicity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65FB	Same die, TO-247 package; R_thJC = 0.58 °C/W (lower), but no isolation - requires insulated mounting hardware.	Better thermal performance in space-constrained PCB-mounted designs; unsuitable where creepage/clearance or heatsink isolation is required.	Select when board-level thermal management dominates over safety isolation needs and heatsink mounting flexibility is limited.
IXYS IXGN30N60B3	600 V rating, 30 A, similar Q_g (140 nC), but higher V_CE(sat) = 1.8 V (typ.) and slower t_f = 55 ns.	Lower voltage rating restricts use to 400 V DC bus systems; higher conduction loss increases heatsink size in high-duty-cycle PFC.	Consider only if legacy design compatibility or cost sensitivity outweighs efficiency and thermal advantages of STGWT30H65FB.

Compared with STGW30H65FB, STGWT30H65FB trades lower thermal resistance for built-in isolation and creepage compliance; versus IXGN30N60B3, it delivers superior 650 V blocking, faster switching, and tighter parameter spread - making it preferred for new 600 V-class renewable energy and industrial power designs.

Availability

STGWT30H65FB is available at Aetrix Electronics and suitable for photovoltaic inverters, power factor correction circuits, and welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGWT30H65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STGWT30H65FB belongs to ST's HB series of high-speed IGBTs - engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor drives where conduction-switching loss trade-offs are critical.

FAQ

What is the maximum allowable gate-emitter voltage for STGWT30H65FB?

The absolute maximum V_GE is ±20 V per datasheet DS10155 Rev 7. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V, with –5 V to –8 V recommended for turn-off bias to improve noise immunity and prevent spurious turn-on during high dv/dt events.

Does STGWT30H65FB require a negative gate drive voltage?

No, it does not require negative gate drive, but applying –5 V to –8 V during turn-off significantly improves robustness against Miller-induced false triggering in high dv/dt environments like three-phase inverters. The device is fully functional with 0 V turn-off, though system-level reliability benefits from negative bias.

Can STGWT30H65FB be paralleled with other IGBTs without external emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat), ±10% V_GE(th)) enable stable current sharing without emitter resistors. However, matched gate drive loop inductance and symmetrical PCB layout remain essential to avoid dynamic imbalance.

What is the insulation rating of the TO-3PF package?

The TO-3PF package provides 3.5 kV_RMS insulation withstand voltage from all three leads to external heat sink for 1 second at T_C = 25 °C. This meets reinforced insulation requirements for 600 V AC mains-connected equipment per IEC 60747-5-2 and enables direct heatsink mounting without additional isolation hardware.

STGWT30H65FB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 151µJ (on), 293µJ (off)

Input Type:: Standard

Gate Charge:: 149 nC

Td (on/off) @ 25°C:: 37ns/146ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

STGWT30H65FB FAQ

1.How can I place an order for STGWT30H65FB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWT30H65FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWT30H65FB reliable?

The price and inventory of STGWT30H65FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWT30H65FB is usually 5 days.

3.What payment methods are accepted for STGWT30H65FB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWT30H65FB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWT30H65FB?

STGWT30H65FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWT30H65FB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWT30H65FB?

For technical support, including STGWT30H65FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWT30H65FB requirements.

6.How does Aetrix verify that STGWT30H65FB is sourced from the original manufacturer or authorized distributors?

All STGWT30H65FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWT30H65FB meets industry standards.

7.What is the process for return or replacement of STGWT30H65FB?

All STGWT30H65FB units undergo pre-shipment inspection (PSI). If there is an issue with STGWT30H65FB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWT30H65FB part is unused and in its original packaging.

Return procedure for STGWT30H65FB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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