STMicroelectronics STGWT30HP65FB

Overview

STGWT30HP65FB from STMicroelectronics is a 650 V, 30 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-3P package. It delivers V_CE(sat) = 1.55 V (typ.) at 30 A/25 °C, 146 ns turn-off delay, and 293 µJ E_off under 400 V/30 A/10 Ω gate drive - optimized for high-efficiency power factor correction (PFC) stages in industrial AC-DC converters.

For engineers reviewing the STGWT30HP65FB datasheet, STGWT30HP65FB pinout, STGWT30HP65FB application, or STGWT30HP65FB equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, 175 °C maximum junction temperature, and low R_thJC = 0.58 °C/W for IGBT die - critical for thermally constrained PFC and motor drive designs.

Technical Context

This IGBT employs ST's proprietary HB-series trench gate field-stop structure to balance conduction and switching losses across 20–100 kHz operation. Its dynamic characteristics are characterized with V_CC = 400 V, I_C = 30 A, V_GE = 0/15 V, R_G = 10 Ω, and T_J up to 175 °C - reflecting real-world hard-switched PFC conditions.

The co-packaged diode exhibits t_rr = 140 ns (typ.), Q_rr = 21 nC (typ.), and soft recovery (dI_rr/dt = 430 A/µs), minimizing voltage overshoot and EMI during commutation. The slightly positive V_CE(sat) temperature coefficient (1.65 V @ 125 °C, 1.75 V @ 175 °C) enables stable current sharing in parallel configurations without external ballasting.

Key Specifications

Pinout & Package

TO-3P package: insulated metal tab (collector), 3-pin through-hole outline with 5.45 mm pitch (e), 20 mm × 15.6 mm footprint, and 20 mm height. Tab is electrically connected to collector (C); pins 1 (G), 2 (C/tab), 3 (E) - confirmed per DS11375 Figure 29 and pin labeling convention.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based PFC applications.

Compared with IXGN30N60B3 and IKW30N60H3, STGWT30HP65FB offers superior 650 V rating for 400 VAC systems with transient margin, lowest E_off, and softest diode recovery - making it optimal for high-frequency, high-efficiency PFC where thermal and EMI constraints dominate.

Availability

STGWT30HP65FB is available at Aetrix Electronics and suitable for industrial power factor correction, server AC-DC front-ends, and solar inverter DC-link switching requiring stable component supply and long-term lifecycle support.

Supply support for STGWT30HP65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency switching applications such as PFC, motor drives, and UPS systems where conduction-loss and switching-loss trade-offs are critical.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 100 kHz?

A 10 Ω gate resistor is validated in the datasheet for t_d(off) = 146 ns and E_off = 293 µJ at 25 °C. Increasing R_G to 15 Ω raises E_off to ~380 µJ and extends t_d(off) to ~180 ns - acceptable for 100 kHz if thermal margin permits, but not recommended beyond 15 Ω due to excessive switching loss and risk of shoot-through in bridge configurations.

Can STGWT30HP65FB be safely paralleled without emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient (1.65 V @ 125 °C, 1.75 V @ 175 °C) and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing. ST recommends symmetrical PCB layout, matched gate drive paths, and common-source emitter routing - but no external emitter resistors are required for balanced static or dynamic current division.

What is the thermal resistance from junction to case for the integrated diode?

The datasheet specifies R_thJC = 5.0 °C/W for the antiparallel diode (Table 1). This is significantly higher than the IGBT's 0.58 °C/W due to separate die attachment and thermal path geometry. For thermal design, treat the diode as a distinct heat source contributing ~10 W at 5 A forward current, requiring independent thermal analysis of the cathode pad area.

Is the TO-3P package lead-free and RoHS-compliant?

Yes - ST certifies the STGWT30HP65FB as ECOPACK2-compliant, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The TO-3P package uses matte tin-plated leads and lead-free solderable terminations, with no exemptions claimed for lead or other restricted substances.