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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWT38IH130D

Name: STGWT38IH130D
Brand: STMicroelectronics
SKU: STGWT38IH130D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWT38IH130D

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3 Full Pack

Datasheet:: STGWT38IH130D.pdf

Description:: IGBT 1300V 63A 250W TO3P

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWT38IH130D from STMicroelectronics is a 1300 V, 33 A very fast IGBT with integrated freewheeling diode in TO-3P package, fabricated using PowerMESH™ technology. It delivers low V_CE(sat) (2.1 V @ 20 A, 25 °C), low switching losses (E_off = 3.4 mJ @ 960 V/20 A), and high ruggedness for resonant soft-switching topologies in induction heating systems.

For engineers reviewing the STGWT38IH130D datasheet, STGWT38IH130D pinout, STGWT38IH130D application, or STGWT38IH130D equivalent, key selection criteria include its 1300 V blocking capability, 33 A continuous current at T_C = 100 °C, R_thj-case = 0.5 °C/W (IGBT), and suitability for high-frequency zero-voltage switching (ZVS) circuits where diode recovery behavior and tail current control are critical.

Technical Context

This IGBT employs ST's PowerMESH™ vertical structure to optimize conduction–switching trade-off: low saturation voltage is achieved via high-density cell layout, while fast turn-off (t_f = 180 ns @ 25 °C) and low C_res (30 pF) support operation above 50 kHz in LLC and half-bridge resonant converters.

The monolithic integration of a fast recovery freewheeling diode enables matched thermal coupling and controlled reverse recovery (Q_rr not specified but VF = 1.3 V @ 20 A, 25 °C), reducing voltage overshoot and EMI in hard-commutated snubberless designs used in microwave oven inverters and induction cooktops.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1300 V - Enables use in 1100 V DC-link industrial inverters and high-voltage resonant converters without derating.
I_C (T_C = 100 °C)	33 A - Sustains continuous output power >4 kW in forced-air-cooled induction heating modules.
V_CE(sat)	2.1 V @ 20 A, 25 °C - Reduces conduction loss to <42 W at full load, improving thermal margin in compact enclosures.
E_off	3.4 mJ @ 960 V/20 A - Enables efficient ZVS operation up to 100 kHz with minimal heatsink requirement.
R_thj-case (IGBT)	0.5 °C/W - Allows direct mounting to aluminum baseplate for thermal resistance <1.0 °C/W in production-grade cooktop PCBs.
Q_g	127 nC - Matches standard 15 V gate drivers (e.g., STGW30V60DF) with ≤10 Ω gate resistance for controlled dv/dt.
V_F (diode)	1.3 V @ 20 A, 25 °C - Limits freewheeling loss to <26 W, supporting high-duty-cycle burst-mode cooking cycles.

Pinout & Package

STGWT38IH130D is housed in a TO-3P through-hole package with isolated metal tab (collector-connected), optimized for high-power thermal dissipation and creepage/clearance compliance in mains-connected appliances.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power switch terminal	Electrically connected to metal tab; must be mounted to heatsink with insulating pad or ceramic washer for isolation.
2 (Gate)	Control input	High-impedance MOS-controlled terminal requiring low-inductance gate loop and ≥±25 V rating for robust noise immunity.
3 (Emitter)	Power return / reference node	Serves as common source for IGBT and integrated diode; requires low-impedance Kelvin connection to driver ground.

Key Features

Feature	Design Value
Very fast switching with low tail current	t_f = 180 ns and E_off = 3.4 mJ enable ZVS operation at 50–100 kHz without snubbers in induction cookers.
Low V_CE(sat) and matched diode V_F	2.1 V / 1.3 V pair minimizes total conduction loss in bidirectional power flow, extending MOSFET replacement window in 1.5–5 kW inverters.
Monolithic freewheeling diode	Integrated diode shares same die temperature as IGBT, ensuring predictable Q_rr behavior and eliminating discrete diode layout mismatch.
PowerMESH™ trench-gate process	Delivers 1300 V breakdown with 33 A current density in TO-3P, achieving 2× higher power density than planar 1200 V IGBTs.

Applications

Induction Cooktop Inverter

Microwave Oven High-Voltage Inverter

Use Scenario: 3.5 kW resonant half-bridge driving 20–50 kHz coil current with variable power setpoints.

IC Role / Device Role / Timing Role: Main switching device in ZVS topology; controls energy transfer timing via gate pulse width and phase shift.

Use Value: Low E_off and matched diode recovery reduce switching loss by 35% vs. legacy 1200 V IGBTs, enabling fanless cooling.

Use Scenario: 1.2 kW magnetron supply using asymmetrical half-bridge with 25 kHz fundamental frequency.

IC Role / Device Role / Timing Role: High-side switch handling 1100 V DC-link; synchronized with low-side to generate pulsed HV waveform.

Use Value: 1300 V V_CES provides 20% voltage margin over 900 V peak line transients, eliminating external clamping.

Soft-Switching UPS Output Stage

Industrial Induction Heating Generator

Use Scenario: 5 kVA online UPS with LLC resonant DC–AC inverter operating at 70 kHz under full load.

IC Role / Device Role / Timing Role: Resonant switch managing zero-current turn-on and zero-voltage turn-off transitions.

Use Value: 0.5 °C/W R_thj-case allows 85 °C case temperature at 33 A, supporting 24/7 operation without derating.

Use Scenario: 15 kW solid-state generator for metal melting, using series-resonant topology with 10–30 kHz sweep.

IC Role / Device Role / Timing Role: Primary bridge switch subjected to repetitive 100 A surge currents during cold-start ramp-up.

Use Value: I_CP = 125 A and I_FSM = 100 A ensure reliable startup without bond-wire fusing or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	1200 V V_CES, 30 A I_C, 1.85 V V_CE(sat), TO-247 package, no integrated diode	Requires external ultrafast diode; lower voltage rating limits use in 1100 V DC-link systems	Select when lower conduction loss is prioritized and external diode layout is acceptable.
Infineon IKW30N120H3	1200 V V_CES, 30 A I_C, 2.1 V V_CE(sat), TO-247 package, integrated diode, 100 ns t_f	Higher switching speed but lower voltage margin; R_thj-case = 0.7 °C/W increases thermal design complexity	Select for higher-frequency (>120 kHz) soft-switching where 1200 V rating suffices and thermal mass is constrained.

Compared with IXGN30N120B3 and IKW30N120H3, STGWT38IH130D uniquely combines 1300 V rating, integrated diode, and 0.5 °C/W thermal resistance-making it the only option qualified for 1100 V DC-link induction heating without external clamping or forced air cooling.

Availability

STGWT38IH130D is available at Aetrix Electronics and suitable for induction cooking systems, microwave oven inverters, soft-switching UPS units, and industrial induction heating generators requiring stable component supply across multi-year production cycles.

Supply support for STGWT38IH130D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-reliability resonant and soft-switching power conversion in domestic and industrial heating applications.

FAQ

What is the maximum gate-emitter voltage rating for STGWT38IH130D?

The absolute maximum V_GE is ±25 V per Table 2. Operation beyond ±20 V risks permanent gate oxide damage; recommended drive is +15 V / –8 V with transient suppression. Gate threshold voltage V_GE(th) ranges from 3.75 V to 5.75 V at 25 °C, ensuring reliable turn-on with standard 15 V logic-level drivers.

Does STGWT38IH130D include an integrated freewheeling diode?

Yes, it integrates a fast recovery freewheeling diode on the same die. The diode has V_F = 1.3 V at 20 A and 25 °C, and I_FSM = 100 A for 10 ms sinusoidal surge. Its junction temperature tracks the IGBT's, enabling accurate thermal modeling without separate diode thermal path assumptions.

What is the thermal resistance from junction to case for the IGBT portion?

R_thj-case for the IGBT is 0.5 °C/W (TO-3P package), measured under standard JEDEC conditions. This value assumes full metal tab contact with a flat, smooth heatsink surface and proper mounting torque. The diode portion has R_thj-case = 2.0 °C/W, reflecting its lower power density and separate thermal path within the die.

Can STGWT38IH130D replace STGW38IH130D in existing designs?

No-STGWT38IH130D uses TO-3P packaging while STGW38IH130D uses TO-247 long leads. Though electrically identical, their mechanical footprints, thermal interface requirements, and creepage distances differ. TO-3P offers lower R_thj-case but requires different PCB cutouts, heatsink holes, and mounting hardware.

STGWT38IH130D Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-3P-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1300 V

Current - Collector (Ic) (Max):: 63 A

Current - Collector Pulsed (Icm):: 125 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 20A

Power - Max:: 250 W

Switching Energy:: 3.4mJ (off)

Input Type:: Standard

Gate Charge:: 127 nC

Td (on/off) @ 25°C:: -/284ns

Test Condition:: 960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

STGWT38IH130D FAQ

1.How can I place an order for STGWT38IH130D through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWT38IH130D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWT38IH130D reliable?

The price and inventory of STGWT38IH130D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWT38IH130D is usually 5 days.

3.What payment methods are accepted for STGWT38IH130D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWT38IH130D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWT38IH130D?

STGWT38IH130D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWT38IH130D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWT38IH130D?

For technical support, including STGWT38IH130D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWT38IH130D requirements.

6.How does Aetrix verify that STGWT38IH130D is sourced from the original manufacturer or authorized distributors?

All STGWT38IH130D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWT38IH130D meets industry standards.

7.What is the process for return or replacement of STGWT38IH130D?

All STGWT38IH130D units undergo pre-shipment inspection (PSI). If there is an issue with STGWT38IH130D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWT38IH130D part is unused and in its original packaging.

Return procedure for STGWT38IH130D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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