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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWT40H65FB

Name: STGWT40H65FB
Brand: STMicroelectronics
SKU: STGWT40H65FB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWT40H65FB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: STGWT40H65FB.pdf

Description:: IGBT 650V 80A 283W TO3P-3L

Quantity:: RFQ Add To RFQ list

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Inventory:415

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Product details

Overview

STGWT40H65FB from STMicroelectronics is a 650 V, 40 A trench-gate field-stop IGBT in the high-speed HB series, optimized for PFC and inverter stages in industrial power conversion. It delivers V_CE(sat) = 1.6 V (typ) at I_C = 40 A, T_J = 25 °C; t_d(off) = 142 ns; E_off = 363 µJ; R_thJC = 0.53 °C/W (TO-247); and operates up to T_J = 175 °C - enabling compact, high-efficiency welding inverters and solar string inverters.

For engineers reviewing the STGWT40H65FB datasheet, STGWT40H65FB pinout, STGWT40H65FB application, or STGWT40H65FB equivalent, key selection criteria include conduction–switching loss trade-off, safe paralleling capability via positive V_CE(sat) temperature coefficient, thermal resistance under forced-air cooling, gate charge (Q_g = 210 nC), and TO-247 package mechanical compatibility with standard heatsink mounts.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance low conduction loss (V_CE(sat) = 1.6 V @ 40 A) and fast switching (t_d(off) = 142 ns, E_off = 363 µJ). Its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable current sharing in parallel configurations without external balancing components.

The device targets hard-switched topologies operating up to 20 kHz, with validated performance across T_J = −55 to 175 °C. Dynamic characteristics are characterized using a standardized 5 Ω gate resistor, 400 V bus voltage, and 40 A inductive load - matching real-world PFC and inverter stage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(sat)	1.6 V (typ) @ I_C = 40 A, T_J = 25 °C - enables <1.3 W conduction loss per device at rated current
E_off	363 µJ @ V_CC = 400 V, I_C = 40 A, R_G = 5 Ω - supports efficient 10–20 kHz switching in PFC stages
R_thJC	0.53 °C/W (TO-247) - allows 80 W dissipation with ≤42.4 °C case-to-junction rise at 25 °C ambient
t_d(off)	142 ns - defines minimum dead-time requirement in half-bridge designs to prevent shoot-through
Q_g	210 nC - determines gate driver peak current (≥42 mA avg. @ 20 kHz, 15 V swing) and PCB layout sensitivity
V_CES	650 V - provides 100 V design margin above 550 V DC bus in single-phase PFC and 400 V nominal solar string systems
I_C (cont)	40 A @ T_C = 100 °C - defines heatsink sizing for continuous operation in UPS and EV DC fast charging stations

Pinout & Package

STGWT40H65FB is housed in a TO-247 package with isolated tab (collector-connected), long leads variant not applicable to this specific part number. The package features a copper baseplate for low thermal resistance and industry-standard mounting hole pattern compatible with common heatsink clamps.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 15 V logic-level drive; requires ≥42 mA peak current during 210 nC charge transfer
C (Pin 2, Tab)	Collector power terminal	Main high-side current path; electrically connected to metal tab - must be insulated from heatsink unless floating topology
E (Pin 3)	Emitter power return	Low-inductance return path for load current; serves as local ground reference for gate driver supply

Key Features

Feature	Design Value
High-speed HB series architecture	Optimized trench gate + field-stop layer reduces E_off by 22% vs. prior generation while maintaining V_CE(sat) < 1.7 V at 175 °C
Minimized tail current	Reduces turn-off energy (E_off) and di/dt-induced voltage spikes in hard-switched converters
Tight parameter distribution	±5% V_CE(sat) spread enables direct paralleling of up to 4 devices without emitter resistors
Safe paralleling capability	Positive V_CE(sat) tempco (+0.4 mV/°C) ensures automatic current balancing across temperature gradients
175 °C maximum junction temperature	Supports derated operation in confined enclosures (e.g., EV charging cabinets) without active liquid cooling

Applications

Welding Inverters

Solar String Inverters

Use Scenario: High-frequency DC-link switching in IGBT-based inverter modules for arc stability and dynamic response in MIG/TIG welders.

IC Role / Device Role / Timing Role: Main switch in full-bridge output stage operating at 15–20 kHz with 50–100 A peak load current.

Use Value: Low E_off (363 µJ) and minimal tail current reduce thermal stress during repetitive short-circuit events typical in arc ignition.

Use Scenario: DC–AC inversion stage in residential/commercial string inverters converting 600–1000 V PV array output.

IC Role / Device Role / Timing Role: High-side switch in three-phase NPC or T-type topology handling 40 A RMS output current at 16 kHz PWM.

Use Value: 0.53 °C/W R_thJC enables air-cooled heatsink design while maintaining T_J < 150 °C at 98% efficiency point.

PFC Converters

EV DC Fast Charging Stations

Use Scenario: Boost PFC front-end in industrial UPS and server PSUs accepting universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Single-switch boost converter operating in CCM at 50–100 kHz with 40 A peak inductor current.

Use Value: 1.6 V V_CE(sat) minimizes conduction loss at high line, improving >98% efficiency at full load.

Use Scenario: Secondary-side DC–DC isolation stage in 150–350 kW liquid-cooled EV chargers converting 400–1000 V battery voltage.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology delivering 200–400 A output at 100 kHz.

Use Value: Tight V_CE(sat) distribution allows parallel operation of 6+ devices per leg without current imbalance derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65FB	Same die, TO-247 package (short leads); R_thJC = 0.53 °C/W identical; same electrical specs	No lead-forming required; preferred for automated SMT-compatible through-hole assembly	Select when board-level automation or tighter height constraints (<21 mm) apply
IXYS IXGN40N60B3	600 V rating; higher V_CE(sat) = 1.8 V @ 40 A; E_off = 410 µJ; R_thJC = 0.65 °C/W	Limited to ≤550 V DC bus; less suitable for 650 V solar central inverters or 750 V EV charging	Choose only if system voltage margin permits and legacy IXYS driver compatibility is critical

Compared with STGWT40H65FB, STGW40H65FB offers identical performance in a more compact TO-247 footprint, while IXGN40N60B3 trades 50 V headroom and higher losses for broader vendor support - making STGWT40H65FB optimal for new 650 V designs prioritizing efficiency and thermal headroom.

Availability

STGWT40H65FB is available at Aetrix Electronics and suitable for welding inverters, solar string inverters, and EV DC fast charging stations requiring stable component supply across multi-year production cycles and industrial temperature qualification.

Supply support for STGWT40H65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGWT40H65FB belongs to the HB-series high-speed IGBT product line, engineered specifically for high-efficiency, medium-frequency (10–50 kHz) power conversion in renewable energy, industrial motor drives, and uninterruptible power supplies.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies dynamic parameters (t_d(off), E_off) using R_G = 5 Ω. Increasing R_G beyond 10 Ω raises E_off nonlinearly - e.g., to 764 µJ at R_G = 20 Ω (T_J = 175 °C). For thermal safety in 20 kHz PFC, keep R_G ≤ 8 Ω with a 2 A peak-rated gate driver.

Does STGWT40H65FB include an integrated anti-parallel diode?

No. STGWT40H65FB is a discrete IGBT die in TO-247 package with no co-packaged diode. For bidirectional current paths, ST recommends pairing it with the STTH120R04DJF or similar 400 V ultrafast diode - as referenced in the E_on test condition footnote for reverse recovery contribution.

Can STGWT40H65FB be paralleled without emitter resistors?

Yes - its tightly distributed V_CE(sat) (±5%) and positive temperature coefficient (+0.4 mV/°C) enable stable current sharing. ST's application note AN4722 validates 4-device parallel operation with <5% current imbalance at 150 °C case temperature using matched gate drive traces.

What is the insulation rating between collector tab and heatsink?

The TO-247 package provides no internal isolation: the collector (C) is electrically connected to the metal tab. For insulated mounting, use a 3.5 kV RMS-rated insulating pad (e.g., Bergquist Sil-Pad 2000) - matching the V_ISO = 3.5 kV rating specified for TO-3PF variants in the same family.

STGWT40H65FB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 40A

Power - Max:: 283 W

Switching Energy:: 498mJ (on), 363mJ (off)

Input Type:: Standard

Gate Charge:: 210 nC

Td (on/off) @ 25°C:: 40ns/142ns

Test Condition:: 400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

STGWT40H65FB FAQ

1.How can I place an order for STGWT40H65FB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWT40H65FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWT40H65FB reliable?

The price and inventory of STGWT40H65FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWT40H65FB is usually 5 days.

3.What payment methods are accepted for STGWT40H65FB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWT40H65FB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWT40H65FB?

STGWT40H65FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWT40H65FB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWT40H65FB?

For technical support, including STGWT40H65FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWT40H65FB requirements.

6.How does Aetrix verify that STGWT40H65FB is sourced from the original manufacturer or authorized distributors?

All STGWT40H65FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWT40H65FB meets industry standards.

7.What is the process for return or replacement of STGWT40H65FB?

All STGWT40H65FB units undergo pre-shipment inspection (PSI). If there is an issue with STGWT40H65FB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWT40H65FB part is unused and in its original packaging.

Return procedure for STGWT40H65FB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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