STMicroelectronics STGWT60H65DFB

Overview

STGWT60H65DFB from STMicroelectronics is a 650 V, 60 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery anti-parallel diode in TO-3P package. It delivers low saturation voltage (1.6 V typ. @ 60 A), minimized tail current, and positive V_CE(sat) temperature coefficient for safe paralleling - optimized for high-efficiency solar inverters and AC-DC converters operating up to 175 °C junction temperature.

For engineers reviewing the STGWT60H65DFB datasheet, STGWT60H65DFB pinout, STGWT60H65DFB application, or STGWT60H65DFB equivalent, key selection criteria include conduction-switching loss trade-off at 10–20 kHz, thermal resistance (R_thJC = 0.4 °C/W for IGBT), reverse recovery charge (99 nC typ. @ 25 °C), and gate charge (306 nC) for gate driver sizing.

Technical Context

This IGBT employs ST's HB-series trench gate field-stop architecture to balance conduction losses (V_CE(sat) = 1.6 V) and switching losses (E_on = 1590 µJ, E_off = 900 µJ @ 400 V/60 A). Its integrated diode features soft recovery (trr = 60 ns typ., Qrr = 99 nC) and low forward voltage (VF = 2.0 V typ. @ 60 A).

The device exhibits tight parameter distribution and a slightly positive V_CE(sat) temperature coefficient, enabling stable current sharing in parallel configurations. Thermal design is supported by low R_thJC (0.4 °C/W IGBT, 1.14 °C/W diode) and rated operation up to T_J = 175 °C.

Key Specifications

Pinout & Package

STGWT60H65DFB uses the TO-3P package (3-pin, isolated tab), with Collector (pin 1), Gate (pin 2), and Emitter (pin 3). The metal tab is electrically connected to the collector, requiring insulated mounting in most applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Compared with STGW60H65DFB, the TO-3P variant offers electrical isolation for the collector tab - critical for floating-leg topologies - while IXGN60N60A3 trades integration and voltage margin for lower unit cost in non-isolated, lower-voltage systems.

Availability

STGWT60H65DFB is available at Aetrix Electronics and suitable for solar inverters, industrial AC-DC converters, and UPS systems requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STGWT60H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGWT60H65DFB belongs to the HB-series high-speed IGBT family, engineered specifically for high-efficiency frequency converters where simultaneous optimization of conduction and switching losses is essential - especially in renewable energy power stages.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 15 kHz?

A 10 Ω gate resistor is validated in the datasheet for 400 V/60 A inductive switching at 25 °C, yielding t_d(off) = 210 ns and E_off = 900 µJ. At 15 kHz and T_J = 125 °C, increase to 12–15 Ω maintains safe dv/dt (<15 V/ns) and limits peak gate current to <2.5 A, preventing driver overstress.

Can STGWT60H65DFB be paralleled without emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient (confirmed in Figure 6) and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing. Parallel operation requires matched gate drive loop inductance (<5 nH difference) and symmetrical thermal mounting to maintain ΔT_J < 5 °C between devices.

How does the integrated diode's reverse recovery performance compare at 175 °C?

At T_J = 175 °C, trr increases to 310 ns and Q_rr rises to 1550 nC - a 15× and 15.7× increase over 25 °C values. This necessitates recalculation of snubber energy (Err = 674 µJ) and verification that gate driver can handle the higher di/dt-induced voltage spike during commutation.

Is the TO-3P package RoHS-compliant and halogen-free?

Yes - ST specifies ECOPACK2 compliance for STGWT60H65DFB, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full material declarations and test reports are available via ST's Quality Portal using order code GWT60H65DFB.