Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWT80H65DFB

Name: STGWT80H65DFB
Brand: STMicroelectronics
SKU: STGWT80H65DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGWT80H65DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: STGWT80H65DFB.pdf

Description:: IGBT 650V 120A 469W TO3P-3L

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,961

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGWT80H65DFB from STMicroelectronics is a 650 V, 80 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-3P package. It delivers low saturation voltage (1.6 V typ. @ 80 A), minimized tail current, and positive V_CE(sat) temperature coefficient for safe paralleling-optimized for photovoltaic inverters and high-frequency converters.

For engineers reviewing the STGWT80H65DFB datasheet, STGWT80H65DFB pinout, STGWT80H65DFB application, or STGWT80H65DFB equivalent, key selection criteria include thermal resistance (R_thJC = 0.32 °C/W for IGBT), switching energy (E_off = 2.1 mJ @ 175 °C), reverse recovery charge (Q_rr = 1105 nC), and gate charge (Q_g = 414 nC) under 520 V/80 A conditions.

Technical Context

This IGBT uses ST's HB-series trench gate field-stop architecture to balance conduction and switching losses. Its slightly positive V_CE(sat) temperature coefficient (1.6 V @ 25 °C → 1.9 V @ 175 °C) enables stable current sharing in parallel configurations without external ballasting resistors.

The integrated diode features soft reverse recovery (trr = 85 ns, Q_rr = 1105 nC @ 25 °C) and low forward voltage (V_F = 1.9 V @ 80 A), reducing commutation losses and EMI in hard-switched topologies like three-phase inverters and UPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands DC bus voltages up to 650 V in PV string inverters and industrial motor drives.
I_C (T_C = 100 °C)	80 A - Sustains continuous output current at 100 °C case temperature, enabling compact heatsink designs.
V_CE(sat)	1.6 V (typ. @ 80 A, 25 °C) - Low conduction loss reduces power dissipation and improves system efficiency above 10 kHz.
E_off	2.1 mJ (@ 400 V, 80 A, T_J = 175 °C) - Enables high-frequency operation (up to 30 kHz) with controlled turn-off loss.
R_thJC (IGBT)	0.32 °C/W - Enables direct mounting on heatsinks with predictable junction-to-case thermal path for thermal design.
Q_rr	1105 nC (@ 80 A, 400 V, 25 °C) - Low reverse recovery charge minimizes diode-induced voltage spikes during IGBT turn-on.
trr	85 ns (@ 80 A, 400 V, 25 °C) - Fast, soft recovery limits dV/dt stress and EMI generation in bridge-leg configurations.

Pinout & Package

STGWT80H65DFB is housed in a TO-3P metal package with isolated tab, rated for high-voltage isolation and robust thermal performance. The package features three terminals: Collector (Tab), Emitter (Pin 1), and Gate (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Collector)	Main high-side current path	Electrically isolated metal tab serves as collector terminal and primary thermal interface-must be mounted with insulating pad or ceramic washer when used on common heatsink.
Pin 1 (Emitter)	Low-side reference node	Emitter connection carries full load current and provides return path for gate drive loop-critical for minimizing parasitic inductance in high-di/dt switching.
Pin 2 (Gate)	Control input	High-impedance MOS-controlled terminal requiring <10 Ω gate resistor to limit peak current and suppress oscillation during fast transitions.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing in parallel IGBT configurations without external emitter resistors-reduces component count and layout complexity.
Tight parameter distribution	±5% V_CE(sat) spread across production lot ensures consistent dynamic behavior and simplifies thermal derating calculations.
Minimized tail current	Reduces turn-off energy (E_off) by >30% vs. standard field-stop IGBTs-directly lowers thermal stress in high-duty-cycle applications.
Very fast soft recovery diode	trr = 85 ns with softness factor >1.5 eliminates voltage overshoot during commutation-reduces snubber requirements in 3-level NPC inverters.
Max T_J = 175 °C	Supports operation in ambient environments up to 105 °C with appropriate heatsinking-enables use in sealed outdoor PV enclosures.

Applications

Photovoltaic String Inverters

Industrial Motor Drives

Use Scenario: DC–AC conversion stage in 10–25 kW single-phase or three-phase solar inverters operating at 16–25 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in H-bridge or NPC topology, paired with complementary device to synthesize sinusoidal output waveform.

Use Value: Low V_CE(sat) and minimized tail current reduce conduction + switching losses by ~12% vs. prior-generation 650 V IGBTs-improving weighted efficiency (EU/CEC) by 0.3–0.5%.

Use Scenario: Output stage of variable-frequency drives for HVAC compressors and pumps, operating at 4–16 kHz with 300–600 V DC bus.

IC Role / Device Role / Timing Role: Main power switch in 2-level inverter leg, handling bidirectional reactive power flow and regenerative braking energy.

Use Value: Positive V_CE(sat) temperature coefficient and tight parameter spread allow safe paralleling of two devices per phase-enabling 50 A RMS output with single TO-3P footprint.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Inverter stage of online double-conversion UPS delivering clean 50/60 Hz sine wave under utility failure, with 10–20 ms transfer time.

IC Role / Device Role / Timing Role: IGBT in full-bridge inverter driving LC filter to shape output voltage; diode handles freewheeling and regeneration.

Use Value: Soft-recovery diode (Q_rr = 1105 nC, trr = 85 ns) suppresses voltage ringing during zero-crossing commutation-reducing EMI filter size by 25%.

Use Scenario: Half-bridge resonant inverter in 10–30 kW induction cooktops and industrial heating units operating at 20–100 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element controlling resonant tank current; diode conducts reverse current during dead-time intervals.

Use Value: Low thermal resistance (R_thJC = 0.32 °C/W) and 175 °C max junction temperature enable sustained 95% duty cycle operation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW80H65DFB	Same die, TO-247 package with non-isolated tab; R_thJC = 0.32 °C/W identical, but requires insulating mounting hardware for floating collector applications.	Preferred where PCB-mounting and lower profile are required; unsuitable for direct heatsink mounting without isolation.	Select when mechanical integration favors TO-247 footprint and thermal interface uses insulated thermal pads.
IXYS IXGN80N60B3	600 V rating, higher V_CE(sat) (1.85 V @ 80 A), slower trr (120 ns), no integrated diode-requires external FRED.	Lower voltage rating restricts use to ≤540 V DC bus; external diode increases layout area and parasitic inductance.	Consider only if cost sensitivity outweighs efficiency and layout compactness requirements in sub-500 V systems.

Compared with STGW80H65DFB and IXGN80N60B3, STGWT80H65DFB uniquely combines TO-3P isolation, 650 V rating, integrated soft diode, and 175 °C operation-making it optimal for space-constrained, high-reliability PV and UPS inverters where thermal management and voltage margin are critical.

Availability

STGWT80H65DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial motor drives, uninterruptible power supplies, and induction heating systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STGWT80H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors for automotive, industrial, and power applications.

STGWT80H65DFB belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

For STGWT80H65DFB, a 10 Ω gate resistor is specified in the datasheet for switching characterization (V_CC = 400 V, I_C = 80 A). Using >15 Ω increases turn-on/off times and E_on/E_off, risking thermal overload at >20 kHz; values <5 Ω may cause gate oscillation due to stray inductance. Optimal range is 8–12 Ω with low-inductance PCB layout.

Can STGWT80H65DFB be paralleled with STGW80H65DFB?

No-STGWT80H65DFB (TO-3P, isolated tab) and STGW80H65DFB (TO-247, non-isolated tab) share identical die characteristics and electrical specs, but their mechanical interfaces differ fundamentally. Paralleling requires matched thermal paths and identical mounting impedance; mixing packages introduces unequal junction temperature rise and current imbalance.

Does the integrated diode support reverse conduction during ZVS operation?

Yes-the antiparallel diode is optimized for soft recovery (trr = 85 ns, softness factor >1.5) and low Q_rr (1105 nC), making it suitable for zero-voltage switching in resonant half-bridge topologies. However, its 175 °C max junction temperature and 80 A continuous rating require careful thermal design under high-frequency reverse conduction duty cycles.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, STGWT80H65DFB's continuous collector current is rated at 80 A (Table 1), and its forward-bias SOA (Figure 8) confirms single-pulse capability up to 160 A for 100 µs. For repetitive operation, derating is required: at 100 °C case, maximum sustainable I_C drops to 65 A at V_CE = 400 V to maintain T_J ≤ 175 °C with R_thJC = 0.32 °C/W.

STGWT80H65DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 80A

Power - Max:: 469 W

Switching Energy:: 2.1mJ (on), 1.5mJ (off)

Input Type:: Standard

Gate Charge:: 414 nC

Td (on/off) @ 25°C:: 84ns/280ns

Test Condition:: 400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr):: 85 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

STGWT80H65DFB FAQ

1.How can I place an order for STGWT80H65DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWT80H65DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWT80H65DFB reliable?

The price and inventory of STGWT80H65DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWT80H65DFB is usually 5 days.

3.What payment methods are accepted for STGWT80H65DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWT80H65DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWT80H65DFB?

STGWT80H65DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWT80H65DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWT80H65DFB?

For technical support, including STGWT80H65DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWT80H65DFB requirements.

6.How does Aetrix verify that STGWT80H65DFB is sourced from the original manufacturer or authorized distributors?

All STGWT80H65DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWT80H65DFB meets industry standards.

7.What is the process for return or replacement of STGWT80H65DFB?

All STGWT80H65DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGWT80H65DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWT80H65DFB part is unused and in its original packaging.

Return procedure for STGWT80H65DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…