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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGY80H65DFB

Name: STGY80H65DFB
Brand: STMicroelectronics
SKU: STGY80H65DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGY80H65DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGY80H65DFB.pdf

Description:: IGBT 650V 120A 469W MAX247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGY80H65DFB from STMicroelectronics is a trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode, rated for 650 V V_CES, 80 A continuous collector current at T_C = 100 °C, and 1.6 V typical V_CE(sat) at I_C = 80 A. It operates up to 175 °C junction temperature and features low thermal resistance (R_thJC = 0.32 °C/W for IGBT, 0.66 °C/W for diode), enabling high-efficiency photovoltaic inverters and high-frequency converters.

For engineers reviewing the STGY80H65DFB datasheet, STGY80H65DFB pinout, STGY80H65DFB application, or STGY80H65DFB equivalent, key selection criteria include its minimized tail current, tight parameter distribution for safe paralleling, 414 nC total gate charge, and reverse recovery characteristics (t_rr = 85 ns typ., Q_rr = 1105 nC typ. at T_J = 25 °C) critical for hard-switched inverter topologies.

Technical Context

This IGBT employs ST's HB-series trench gate and field-stop architecture to balance conduction and switching losses-achieving 2.1 mJ E_on and 1.5 mJ E_off at 400 V, 80 A, R_G = 10 Ω, T_J = 25 °C. Its slightly positive V_CE(sat) temperature coefficient and tight parameter spread enable stable parallel operation without external current-sharing resistors.

The co-packaged diode delivers very fast soft recovery (t_rr = 85 ns, dI_rr/dt = 722 A/µs) and low reverse recovery energy (E_rr = 267 µJ), reducing voltage overshoot and EMI in bridge-leg configurations. Dynamic parameters-including C_ies = 10524 pF, C_res = 215 pF, and Q_gc = 170 nC-are optimized for gate drive robustness and controllable dv/dt.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under open-gate conditions; supports 400–600 V DC-link applications.
I_C (continuous, T_C = 100 °C)	80 A - Sustained output current capability at practical heatsink temperatures; defines usable power range.
V_CE(sat) (typ., 80 A, 25 °C)	1.6 V - Low conduction loss enabling <1.3 W conduction dissipation per device at 80 A.
E_off (typ., 400 V, 80 A)	1.5 mJ - Turn-off energy defining snubber sizing and thermal load during high-frequency switching.
t_rr (diode, 80 A, 25 °C)	85 ns - Ultra-fast reverse recovery time minimizing commutation losses and voltage spikes in half-bridge operation.
R_thJC (IGBT)	0.32 °C/W - Low junction-to-case thermal resistance enabling compact heatsink design and higher power density.
Q_g	414 nC - Total gate charge determining gate driver peak current requirement (≥4 A for 100 ns rise time).

Pinout & Package

STGY80H65DFB uses the Max247 package-a variant of TO-247 with standardized leadframe geometry and enhanced thermal performance. The package features three terminals: Gate (G), Collector (C), and Emitter (E), with the collector connected to the metal tab for direct heatsink mounting and low-inductance thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives ±20 V gate-emitter voltage; requires 414 nC total charge for full turn-on; sensitive to noise due to high C_ies.
C (Collector)	High-side power terminal	Connected to DC-link positive; electrically and thermally tied to metal tab; must be isolated from heatsink unless using insulating pad.
E (Emitter)	Power return and reference node	Serves as common emitter for IGBT and cathode for antiparallel diode; carries full load current and reverse recovery current; critical for low-inductance PCB layout.

Key Features

Feature	Design Value
Max junction temperature	175 °C - Enables operation in high-ambient environments (e.g., rooftop PV enclosures) without derating.
Minimized tail current	Reduces E_off by >25% vs. standard FS-IGBTs, lowering switching loss and heat generation at 10–20 kHz.
Tight parameter distribution	Ensures uniform current sharing across paralleled devices without external balancing components.
Very fast soft recovery diode	85 ns t_rr, 267 µJ E_rr - Limits voltage overshoot (<100 V) during hard commutation in 3-phase inverters.
Low R_thJC (0.32 °C/W)	Permits 469 W total dissipation at T_C = 25 °C - supports high-power density designs with minimal heatsink mass.

Applications

Photovoltaic Inverters

Industrial Motor Drives

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC at 16–25 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional current flow via integrated diode during freewheeling intervals.

Use Value: 1.6 V V_CE(sat) and 1.5 mJ E_off directly improve system efficiency above 98.2%; soft diode prevents shoot-through risk during dead-time transitions.

Use Scenario: Variable-frequency drives for HVAC compressors and pumps operating at 2–10 kHz with regenerative braking.

IC Role / Device Role / Timing Role: High-side switch in six-pack IGBT module configuration; conducts motor phase current and recovers energy during deceleration.

Use Value: Tight V_CE(sat) distribution enables reliable paralleling for 30–50 kW systems; 175 °C rating supports fanless enclosure designs.

UPS Systems

Induction Heating

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output with battery backup; IGBTs operate in inverter stage at 4–8 kHz.

IC Role / Device Role / Timing Role: Output stage switch managing sinusoidal PWM waveform synthesis; diode handles reactive current during zero-crossings.

Use Value: Low Q_rr (1105 nC) and soft recovery reduce EMI filter size and cost; 0.32 °C/W R_thJC allows compact thermal management in space-constrained rack units.

Use Scenario: Medium-frequency (20–50 kHz) resonant inverters for domestic cooktops and industrial heating coils.

IC Role / Device Role / Timing Role: Half-bridge switch sustaining high di/dt (1270 A/µs) and repetitive hard switching with zero-voltage transition assistance.

Use Value: Minimized tail current suppresses tail-induced losses at high frequency; 650 V rating accommodates 400 V DC bus with 50% voltage margin for transient spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW80H65DFB	Same die, TO-247 package (shorter leads, different mechanical footprint); identical electrical specs.	Requires different PCB footprint and heatsink mounting; lower lead inductance but reduced creepage distance.	Select when standard TO-247 compatibility or legacy board reuse is required.
IXYS IXGN80N60B3	600 V rating (vs. 650 V), higher V_CE(sat) (1.8 V typ.), slower t_rr (120 ns), no soft recovery diode.	Less suitable for 400 V+ DC-link systems with strict voltage margin; higher conduction loss increases thermal load.	Consider only if 600 V rating suffices and cost sensitivity outweighs efficiency and EMI advantages.

Compared with STGW80H65DFB, STGY80H65DFB offers identical performance in a Max247 package optimized for automated assembly and thermal reliability; versus IXGN80N60B3, it delivers superior voltage margin, lower conduction loss, and integrated soft-recovery diode-critical for high-efficiency, low-EMI inverter designs.

Availability

STGY80H65DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGY80H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete devices, microcontrollers, and analog ICs for industrial, automotive, and energy applications.

STGY80H65DFB belongs to the HB-series high-speed IGBT family, engineered specifically for high-frequency, high-efficiency power conversion in renewable energy and industrial motor control systems.

FAQ

What is the maximum recommended gate resistor value for STGY80H65DFB in a 16 kHz PV inverter?

A 10 Ω gate resistor is specified in the datasheet for switching characterization at 16 kHz. Using ≥15 Ω increases turn-off delay (t_d(off)) and E_off by >20%, risking thermal overload. For 16 kHz operation, 8–12 Ω provides optimal trade-off between switching loss and EMI; lower values require robust gate drivers capable of ≥4 A peak current.

Can STGY80H65DFB be paralleled without external emitter resistors?

Yes-its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing across up to four devices without emitter resistors. Layout symmetry (matched gate and emitter loop inductance) remains critical; asymmetry >10% in gate drive path length causes >15% current imbalance at full load.

How does the integrated diode's reverse recovery behavior affect snubber design?

The diode's soft recovery (t_rr = 85 ns, dI_rr/dt = 722 A/µs) limits voltage overshoot to <120 V with a 100 nH stray inductance-reducing snubber capacitor size by ~40% versus standard FRD-based IGBTs. A 10 nF/1 kV RC snubber across C–E is sufficient for most 400 V DC-link applications at ≤20 kHz.

Is STGY80H65DFB RoHS-compliant and halogen-free?

Yes-STGY80H65DFB is manufactured in ST's ECOPACK®2-compliant process, meeting RoHS Directive 2011/65/EU and JEDEC JS709C halogen-free requirements. The Max247 package uses matte tin-plated leads and lead-free solder-compatible terminations, verified per J-STD-020 moisture sensitivity level 1.

STGY80H65DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 80A

Power - Max:: 469 W

Switching Energy:: 2.1mJ (on), 1.5mJ (off)

Input Type:: Standard

Gate Charge:: 414 nC

Td (on/off) @ 25°C:: 84ns/280ns

Test Condition:: 400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr):: 85 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: MAX247™

STGY80H65DFB FAQ

1.How can I place an order for STGY80H65DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGY80H65DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGY80H65DFB reliable?

The price and inventory of STGY80H65DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGY80H65DFB is usually 5 days.

3.What payment methods are accepted for STGY80H65DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGY80H65DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGY80H65DFB?

STGY80H65DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGY80H65DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGY80H65DFB?

For technical support, including STGY80H65DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGY80H65DFB requirements.

6.How does Aetrix verify that STGY80H65DFB is sourced from the original manufacturer or authorized distributors?

All STGY80H65DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGY80H65DFB meets industry standards.

7.What is the process for return or replacement of STGY80H65DFB?

All STGY80H65DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGY80H65DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGY80H65DFB part is unused and in its original packaging.

Return procedure for STGY80H65DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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