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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGYA120M65DF2

Name: STGYA120M65DF2
Brand: STMicroelectronics
SKU: STGYA120M65DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGYA120M65DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3 Exposed Pad

Datasheet:: STGYA120M65DF2.pdf

Description:: IGBT NPT FS 650V 160A MAX247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGYA120M65DF2 from STMicroelectronics is a trench-gate field-stop IGBT with integrated fast-soft-recovery anti-parallel diode, rated for 650 V V_CES, 120 A continuous collector current at T_C = 100 °C, and 6 µs short-circuit withstand time at V_GE = 15 V. It delivers V_CE(sat) = 1.65 V (typ.) at I_C = 120 A and T_J = 25 °C, features positive V_CE(sat) temperature coefficient, and is optimized for motor control inverters and PFC stages.

For engineers reviewing the STGYA120M65DF2 datasheet, STGYA120M65DF2 pinout, STGYA120M65DF2 application, or STGYA120M65DF2 equivalent, key selection criteria include short-circuit ruggedness (6–10 µs), low R_thJC (0.24 °C/W), tight parameter distribution for paralleling, and diode Q_rr = 2.9 µC (T_J = 25 °C) in high-frequency switching systems.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture to balance conduction loss, switching speed, and short-circuit robustness. Its design integrates a co-packaged diode with soft recovery characteristics (t_rr = 202 ns, Q_rr = 2.9 µC at T_J = 25 °C) and exhibits a positive V_CE(sat) temperature coefficient - enabling stable current sharing in parallel configurations without external current-balancing resistors.

The device operates across T_J = –55 to +175 °C and supports gate drive voltages up to ±20 V. Dynamic performance is characterized under standardized inductive-load conditions (V_CC = 400 V, I_C = 120 A, R_G = 4.7 Ω), delivering E_on = 1.8 mJ and E_off = 4.41 mJ at T_J = 25 °C, with degradation bounded at elevated junction temperatures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage before avalanche; enables use in 400 V AC input systems with 1.5× safety margin.
I_C (continuous, T_C = 100 °C)	120 A - Sustained output current capability at heatsink temperature of 100 °C; defines thermal design baseline.
V_CE(sat) (typ., 120 A, 25 °C)	1.65 V - Low saturation voltage reduces conduction loss; yields ~198 W I²R loss at full load.
t_sc (min., V_GE = 15 V)	6 µs - Minimum short-circuit survival time under rated gate drive; supports robust protection circuitry design.
R_thJC (IGBT)	0.24 °C/W - Low junction-to-case thermal resistance enables efficient heat transfer to heatsink; critical for power density.
Q_g	420 nC - Total gate charge determines driver strength requirement; mandates ≥2 A peak gate current for <100 ns turn-on.
Q_rr (diode, 25 °C)	2.9 µC - Reverse recovery charge directly impacts diode switching loss and EMI in bridge-leg commutation.

Pinout & Package

STGYA120M65DF2 is housed in the Max247 long leads package - a through-hole, isolated-base, industrial-grade power module outline with 3 main terminals (Collector, Gate, Emitter) and integrated diode anode/cathode connections. The package provides creepage/clearance compliant with IEC 61800-5-1 and supports >10 kV isolation testing.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path terminal	Connected to DC bus positive; carries full load current and must be routed with low-inductance layout.
Gate (G)	Control electrode for IGBT channel	Requires low-impedance gate driver (R_G = 4.7 Ω typical); sensitive to noise due to high dV/dt during switching.
Emitter (E)	Reference node for gate drive and current sensing	Serves as common return for IGBT and diode; must be star-point connected to minimize ground bounce.
Diode Cathode (K)	Integrated antiparallel diode cathode	Internally bonded to Collector; forms freewheeling path during inductive load commutation.
Diode Anode (A)	Integrated antiparallel diode anode	Internally bonded to Emitter; completes diode path without external component placement.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables 650 V rating with low V_CE(sat) and controlled tail current - reducing both conduction and switching losses.
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing in parallel operation - eliminates need for emitter resistors or active current sharing.
Soft- and fast-recovery antiparallel diode	Q_rr = 2.9 µC and t_rr = 202 ns at 25 °C reduce reverse recovery stress and EMI generation in hard-switched bridges.
Tight parameter distribution	V_CE(sat) spread ≤ 0.5 V across production lot - simplifies system-level derating and improves inverter efficiency predictability.
175 °C maximum junction temperature	Supports high ambient operation (e.g., enclosed UPS cabinets) and extends thermal headroom for overload transients.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage driving 15–30 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main switching device in 6-pulse inverter leg; handles PWM frequencies up to 16 kHz with <100 ns dead-time requirements.

Use Value: 6 µs short-circuit withstand time enables reliable overcurrent response using microsecond-scale desaturation detection.

Use Scenario: Online double-conversion UPS with bidirectional inverter/rectifier topology operating at 50/60 Hz fundamental and 2–5 kHz PWM.

IC Role / Device Role / Timing Role: Inverter-side IGBT in full-bridge configuration; switches DC bus to generate clean sinusoidal AC output.

Use Value: Low Q_rr (2.9 µC) and soft diode recovery minimize voltage overshoot during zero-crossing commutation, improving THD & reliability.

Active Front-End (AFE) Rectifiers

General-Purpose Industrial Inverters

Use Scenario: Regenerative rectifier stage in servo drives and regenerative braking systems feeding energy back to DC bus.

IC Role / Device Role / Timing Role: Bidirectional switch in three-phase Vienna or T-type topology; conducts both forward and reverse current.

Use Value: Symmetrical V_CE(sat) and diode VF characteristics ensure balanced conduction loss in both directions, improving power factor correction accuracy.

Use Scenario: Cost-sensitive variable-frequency drives for conveyors, fans, and compressors in manufacturing plants.

IC Role / Device Role / Timing Role: Primary power switch in 2-level inverter; operated at fixed 4–8 kHz carrier frequency with thermal cycling up to 10,000 cycles/year.

Use Value: R_thJC = 0.24 °C/W and 175 °C T_Jmax allow compact heatsink design while maintaining >10-year lifetime under 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN120N60B3	600 V rating, higher V_CE(sat) (2.2 V @ 120 A), no integrated diode - requires external ultrafast diode.	Limited to non-regenerative 400 V AC systems; unsuitable for AFE or bidirectional topologies without added components.	Select when cost sensitivity outweighs integration benefit and system voltage is strictly ≤ 340 V RMS.
Infineon IKW120N60T	600 V rating, lower Q_g (320 nC), but only 4 µs t_sc; diode Q_rr = 4.1 µC - higher recovery loss.	Higher EMI risk in high-di/dt PFC stages; reduced short-circuit margin may require faster protection circuits.	Prefer for space-constrained designs where gate drive power is limited and short-circuit fault duration is tightly controlled.

Compared with IXGN120N60B3 and IKW120N60T, STGYA120M65DF2 offers superior voltage margin (650 V vs. 600 V), integrated diode functionality, and longer short-circuit withstand time - making it the optimal choice for 400 V AC industrial inverters requiring robustness, simplicity, and thermal headroom.

Availability

STGYA120M65DF2 is available at Aetrix Electronics and suitable for motor control, UPS, PFC, and general-purpose inverter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGYA120M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete devices, microcontrollers, sensors, and automotive ICs - with over 40 years of industrial power electronics expertise.

STGYA120M65DF2 belongs to the M-series IGBT family, engineered specifically for high-efficiency, high-reliability inverter systems where low conduction loss, short-circuit ruggedness, and safe paralleling are mandatory design requirements.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G = 4.7 Ω for characterization, and maximum recommended R_G is 15 Ω to maintain t_d(off) ≤ 200 ns and limit E_off increase to <25% at T_J = 175 °C. Higher values risk excessive voltage overshoot during turn-off due to stray inductance interaction with slow di/dt.

Does STGYA120M65DF2 support paralleling without external emitter resistors?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±0.2 V V_CE(sat) tolerance) enable stable current sharing across parallel units without emitter resistors, provided layout symmetry and matched gate drive paths are maintained per ST Application Note AN4723.

What is the diode's reverse recovery behavior at 175 °C junction temperature?

At T_J = 175 °C, the diode exhibits t_rr = 320 ns, Q_rr = 11.2 µC, and I_rrm = 62 A under IF = 120 A, VR = 400 V, and di/dt = 1000 A/µs - indicating increased recovery charge and slower fall time, which must be accounted for in snubber and EMI filter design.

Is the Max247 long leads package RoHS-compliant and halogen-free?

Yes - ST certifies the Max247 long leads package as ECOPACK2 compliant: lead-free, RoHS-compliant, and halogen-free per IEC 61249-2-21, with full material declarations available in ST's ECOPACK database (document number ECOPACK2-MAX247LL).

STGYA120M65DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-247-3 Exposed Pad

Packaging:: Tube

Product Status:: Active

IGBT Type:: NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 160 A

Current - Collector Pulsed (Icm):: 360 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 120A

Power - Max:: 625 W

Switching Energy:: 1.8mJ (on), 4.41mJ (off)

Input Type:: Standard

Gate Charge:: 420 nC

Td (on/off) @ 25°C:: 66ns/185ns

Test Condition:: 400V, 120A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 202 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: MAX247™

STGYA120M65DF2 FAQ

1.How can I place an order for STGYA120M65DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGYA120M65DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGYA120M65DF2 reliable?

The price and inventory of STGYA120M65DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGYA120M65DF2 is usually 5 days.

3.What payment methods are accepted for STGYA120M65DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGYA120M65DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGYA120M65DF2?

STGYA120M65DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGYA120M65DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGYA120M65DF2?

For technical support, including STGYA120M65DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGYA120M65DF2 requirements.

6.How does Aetrix verify that STGYA120M65DF2 is sourced from the original manufacturer or authorized distributors?

All STGYA120M65DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGYA120M65DF2 meets industry standards.

7.What is the process for return or replacement of STGYA120M65DF2?

All STGYA120M65DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGYA120M65DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGYA120M65DF2 part is unused and in its original packaging.

Return procedure for STGYA120M65DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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