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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGYA50M120DF3

Name: STGYA50M120DF3
Brand: STMicroelectronics
SKU: STGYA50M120DF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGYA50M120DF3

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGYA50M120DF3.pdf

Description:: IGBT TRENCH FS 1200V 100A MAX247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGYA50M120DF3 from STMicroelectronics is a trench gate field-stop IGBT with integrated soft- and fast-recovery antiparallel diode, rated for 1200 V V_CES, 50 A continuous collector current at T_C = 100 °C, and 10 µs short-circuit withstand time. It delivers low V_CE(sat) = 1.7 V (typ.) at I_C = 50 A and T_J = 25 °C, features positive V_CE(sat) temperature coefficient for safe paralleling, and is optimized for industrial motor drives and solar inverters.

For engineers reviewing the STGYA50M120DF3 datasheet, STGYA50M120DF3 pinout, STGYA50M120DF3 application, or STGYA50M120DF3 equivalent, key selection criteria include short-circuit robustness, thermal resistance (R_thJC = 0.28 °C/W for IGBT), diode reverse recovery performance (Q_rr = 2.2 µC at T_J = 25 °C), and gate charge (Q_g = 194 nC) for switching loss estimation in high-efficiency inverter designs.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture to balance conduction and switching losses while maintaining rugged short-circuit capability. Its integrated diode exhibits soft recovery with trr = 325 ns and Qrr = 2.2 µC at 25 °C, and tight parameter distribution ensures consistent dynamic behavior across units.

The device operates over T_J = –55 to 175 °C, with V_GE(th) = 5–7 V and a positive temperature coefficient for V_CE(sat), enabling stable parallel operation without current imbalance. Gate drive requires ±20 V rating and supports 15 V nominal turn-on with 10 Ω external gate resistor for standard inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Maximum blocking voltage under open-gate condition; defines DC bus voltage ceiling in 600–800 V inverter topologies.
I_C (T_C = 100 °C)	50 A - Continuous collector current limit at case temperature of 100 °C; sets thermal design margin for heatsink sizing.
V_CE(sat) (I_C = 50 A, T_J = 25 °C)	1.7 V (typ.) - Low saturation voltage reduces conduction loss; contributes ~85 W per device at full load in 10 kHz PWM operation.
t_sc	10 µs - Short-circuit withstand time at V_CC ≤ 600 V and T_J,start ≤ 150 °C; enables reliable fault handling without desaturation circuitry.
R_thJC (IGBT)	0.28 °C/W - Junction-to-case thermal resistance; determines ΔT_J-C rise per watt dissipated, critical for thermal interface design.
Q_g	194 nC - Total gate charge at V_GE = 0–15 V; defines gate driver peak current requirement (e.g., >19 mA avg. for 10 ns rise time).
Q_rr (T_J = 25 °C)	2.2 µC - Reverse recovery charge of integrated diode; directly impacts turn-on loss of complementary switch and EMI generation.

Pinout & Package

STGYA50M120DF3 is housed in the Max247 long leads package - a through-hole, insulated baseplate power module with 3 main terminals (Collector, Gate, Emitter) and integrated diode anode/cathode sharing emitter and collector pins respectively. The package provides creepage/clearance compliance for 1200 V systems and facilitates direct mounting to heatsinks via the metal baseplate.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path input	Connects to DC+ bus; carries full load current and must be routed with low-inductance layout to minimize voltage overshoot during turn-off.
Gate (G)	Control terminal for IGBT channel	Requires low-impedance gate driver (≤10 Ω series R) and local 100 nF decoupling; sensitive to dV/dt-induced false turn-on.
Emitter (E)	Common reference for IGBT and diode	Serves as return path for both IGBT collector current and diode forward current; must be low-inductance connection to minimize V_GE noise.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables 1200 V blocking with reduced drift region thickness, lowering conduction loss while maintaining avalanche ruggedness.
Positive V_CE(sat) temperature coefficient	Ensures current sharing stability in paralleled configurations without active balancing circuits or mismatched gate resistors.
Soft- and fast-recovery antiparallel diode	Reduces reverse recovery tail current and associated switching loss in complementary half-bridge operation, improving system efficiency by ~1.2% at 10 kHz.
Tight parameter distribution	Minimizes unit-to-unit variation in V_CE(sat), Q_g, and t_sc, simplifying thermal derating and gate driver design across production batches.
175 °C maximum junction temperature	Allows operation in high-ambient environments (e.g., enclosed solar inverters) with reduced heatsink volume or forced-air cooling requirements.

Applications

Industrial Motor Drives

Solar Inverters

Use Scenario: Three-phase 15–30 kW variable-frequency drives for pumps and compressors operating at 4–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional energy flow during regeneration and manages high di/dt transients during torque control.

Use Value: 10 µs short-circuit rating allows safe operation under stalled motor conditions without immediate desaturation shutdown, reducing nuisance trips.

Use Scenario: String inverters converting DC from photovoltaic arrays (600–1000 V) into grid-synchronized AC at 50/60 Hz with MPPT tracking.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type three-level topology; blocks full DC-link voltage and commutates reactive power during zero-crossing transitions.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction and switching losses, enabling >98.5% peak efficiency at 25 °C ambient.

UPS Systems

General Purpose Inverters

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from battery-backed DC bus during utility failure.

IC Role / Device Role / Timing Role: Output stage IGBT in H-bridge configuration; sustains 100% load for ≥10 minutes with minimal thermal drift and no derating.

Use Value: R_thJC = 0.28 °C/W and 175 °C T_Jmax enable compact heatsink design while maintaining 15 K safety margin at full load.

Use Scenario: Modular 5–20 kW inverters for energy storage systems (ESS) and EV charging infrastructure requiring high reliability and field serviceability.

IC Role / Device Role / Timing Role: Primary power switch in isolated DC-AC stage; interfaces with transformerless or galvanically isolated topologies depending on safety certification.

Use Value: Tight parameter distribution and positive V_CE(sat) coefficient allow drop-in replacement across modules without recalibration or firmware adjustment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	Higher V_CE(sat) = 2.2 V (typ.), lower Q_g = 140 nC, same 1200 V/50 A rating	Optimized for higher-frequency operation (>20 kHz); less suitable for high-current, low-switching-frequency industrial drives	Select when prioritizing switching speed over conduction loss in resonant or soft-switching topologies.
Infineon IKW50N120H3	Lower Q_rr = 1.4 µC, higher t_sc = 12 µs, identical R_thJC = 0.28 °C/W	Better suited for high-reliability UPS where extended short-circuit immunity and lower diode loss are critical	Prefer for mission-critical backup systems requiring extended fault hold time and reduced diode EMI.

Compared with IXGN50N120B3 and IKW50N120H3, STGYA50M120DF3 offers the lowest conduction loss (1.7 V V_CE(sat)) and balanced trade-off between diode recovery softness and switching energy, making it optimal for cost-sensitive industrial inverters where thermal management dominates system size.

Availability

STGYA50M120DF3 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for BOM continuity.

Supply support for STGYA50M120DF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power devices, microcontrollers, sensors, and automotive ICs with vertical manufacturing capabilities and ISO/TS 16949-certified processes.

This device belongs to ST's M-series IGBT portfolio, engineered specifically for medium-power industrial inverters where low-loss operation, short-circuit robustness, and safe paralleling are essential design requirements.

FAQ

What is the maximum gate-emitter voltage rating for STGYA50M120DF3?

The absolute maximum gate-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns. Exceeding ±20 V continuously risks oxide breakdown and permanent gate damage; recommended gate drive uses +15 V turn-on and –5 to –10 V turn-off for noise immunity and reliable Miller clamping.

Does STGYA50M120DF3 require an external freewheeling diode?

No - STGYA50M120DF3 integrates a soft- and fast-recovery antiparallel diode within the same package, eliminating need for discrete diodes in standard half-bridge or inverter leg configurations. The diode shares the emitter and collector terminals and is rated for 50 A continuous forward current at T_C = 100 °C.

How does junction temperature affect V_CE(sat) in this IGBT?

V_CE(sat) increases with junction temperature due to its positive temperature coefficient: from 1.7 V at 25 °C to 2.1 V at 175 °C (at I_C = 50 A). This behavior improves current sharing in paralleled devices and prevents thermal runaway, but requires gate drive voltage margin to maintain saturation at high T_J.

What is the thermal resistance from junction to case for the IGBT portion?

The junction-to-case thermal resistance for the IGBT section is 0.28 °C/W, measured under steady-state conditions with proper mounting pressure and thermal interface material. This value applies only to heat flow from the IGBT die to the metal baseplate; the diode section has separate R_thJC = 0.48 °C/W.

STGYA50M120DF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 50A

Power - Max:: 535 W

Switching Energy:: 2mJ (on), 3.2mJ (off)

Input Type:: Standard

Gate Charge:: 194 nC

Td (on/off) @ 25°C:: 38ns/258ns

Test Condition:: 600V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr):: 325 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: MAX247™

STGYA50M120DF3 FAQ

1.How can I place an order for STGYA50M120DF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGYA50M120DF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGYA50M120DF3 reliable?

The price and inventory of STGYA50M120DF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGYA50M120DF3 is usually 5 days.

3.What payment methods are accepted for STGYA50M120DF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGYA50M120DF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGYA50M120DF3?

STGYA50M120DF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGYA50M120DF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGYA50M120DF3?

For technical support, including STGYA50M120DF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGYA50M120DF3 requirements.

6.How does Aetrix verify that STGYA50M120DF3 is sourced from the original manufacturer or authorized distributors?

All STGYA50M120DF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGYA50M120DF3 meets industry standards.

7.What is the process for return or replacement of STGYA50M120DF3?

All STGYA50M120DF3 units undergo pre-shipment inspection (PSI). If there is an issue with STGYA50M120DF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGYA50M120DF3 part is unused and in its original packaging.

Return procedure for STGYA50M120DF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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