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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGYA75H120DF2

Name: STGYA75H120DF2
Brand: STMicroelectronics
SKU: STGYA75H120DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGYA75H120DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGYA75H120DF2.pdf

Description:: IGBT TRENCH FS 1200V 150A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGYA75H120DF2 from STMicroelectronics is a trench gate field-stop IGBT with integrated fast-recovery antiparallel diode, rated for 1200 V V_CES, 75 A continuous collector current at T_C = 100 °C, and 5 µs short-circuit withstand time. It delivers 2.1 V typical V_CE(sat) at I_C = 75 A and features a positive V_CE(sat) temperature coefficient for stable parallel operation in high-efficiency solar inverters and UPS systems.

For engineers reviewing the STGYA75H120DF2 datasheet, STGYA75H120DF2 pinout, STGYA75H120DF2 application, or STGYA75H120DF2 equivalent, key selection criteria include its 0.2 °C/W IGBT junction-to-case thermal resistance, tight parameter distribution, 313 nC total gate charge, and optimized conduction–switching loss trade-off for 10–20 kHz PFC and inverter stages.

Technical Context

This H-series IGBT employs a proprietary trench gate field-stop structure to balance low conduction loss (2.1 V V_CE(sat)) and fast switching (t_d(off) = 366 ns, E_off = 3.9 mJ at T_J = 25 °C). Its integrated diode exhibits 356 ns reverse recovery time and 2.6 µC Q_rr at T_J = 25 °C, enabling efficient hard-switched topologies.

The device's slightly positive V_CE(sat) temperature coefficient and ±250 nA gate leakage support robust paralleling without external current-sharing resistors. Thermal design is enabled by R_thJC = 0.2 °C/W (IGBT) and R_thJC = 0.48 °C/W (diode), allowing high-power density in forced-air-cooled industrial converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Withstands DC bus voltages up to 1000 V in 3-phase rectified solar or UPS applications with 20% safety margin.
I_C (T_C = 100 °C)	75 A - Sustains continuous output current in 15–25 kW inverter legs with case temperature ≤100 °C under forced air cooling.
V_CE(sat) (T_J = 25 °C)	2.1 V typ. - Enables <1.6 W conduction loss per device at 75 A, critical for >98% system efficiency targets.
t_sc	5 µs - Supports robust short-circuit protection timing in IGBT gate drivers without desaturation fault latency issues.
R_thJC (IGBT)	0.2 °C/W - Allows 150 W power dissipation with only 30 °C temperature rise from case to junction, easing heatsink sizing.
Q_g	313 nC - Determines gate driver peak current requirement (~3 A for 100 ns turn-on with 10 Ω gate resistor).
trr (diode)	356 ns @ T_J = 25 °C - Limits diode reverse recovery losses to <1 mJ per switching cycle in 10–15 kHz PFC boost stages.

Pinout & Package

Delivered in the Max247 long leads package - a through-hole, isolated-base, 3-pin TO-247 variant with extended leads for improved creepage/clearance and mechanical stability in high-voltage industrial modules. The package supports direct mounting to heatsinks via insulated washers and enables high-current PCB routing with low-inductance emitter connections.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ±20 V absolute max rating; 313 nC total charge demands low-impedance gate driver path.
2 (C)	Collector	Main high-side power terminal; electrically tied to tab (isolated base); carries full load current and switching transients.
3 (E)	Emitter	Power return and gate reference node; low-inductance layout essential to minimize V_GE ringing during hard switching.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) and switching speed-critical for 10–25 kHz high-frequency inverters.
Positive V_CE(sat) temperature coefficient	Ensures inherent current sharing when paralleling multiple devices without external ballast resistors or active balancing.
5 µs short-circuit withstand time	Permits use with standard desaturation detection circuits (e.g., 1–2 µs response + 2–3 µs margin) in industrial motor drives.
Tight parameter distribution	Reduces binning requirements and simplifies thermal derating across production lots in multi-kW OEM designs.
Very fast recovery antiparallel diode	356 ns trr and 2.6 µC Q_rr minimize commutation losses in two-level and three-level NPC inverter topologies.

Applications

Solar Inverter Boost Stage

UPS Inverter Output Stage

Use Scenario: 15–25 kW string or central inverter boost converter operating at 16–20 kHz with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated diode conducting freewheeling current during low-side conduction.

Use Value: 2.1 V V_CE(sat) and 356 ns diode trr reduce conduction and recovery losses, enabling >99% boost stage efficiency at full load.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 700–800 VDC bus with 10 ms transfer time.

IC Role / Device Role / Timing Role: Leg-switching IGBT in three-phase inverter bridge handling bidirectional energy flow during battery charging/discharging.

Use Value: 5 µs short-circuit rating and 175 °C max junction temperature ensure reliable operation during grid faults and overload conditions.

PFC Front-End Converter

Industrial Welding Inverter

Use Scenario: Active 3-phase PFC rectifier in 30 kW EV charger or server PSU, switching at 12–18 kHz.

IC Role / Device Role / Timing Role: Switching element in Vienna or T-type PFC topology where diode reverse recovery directly impacts THD and efficiency.

Use Value: Low Q_rr (2.6 µC) and soft reverse recovery minimize voltage overshoot and EMI, easing filter design and meeting EN 61000-3-2 Class A.

Use Scenario: 20–40 kHz resonant inverter in IGBT-based arc welding equipment delivering 200–500 A output current.

IC Role / Device Role / Timing Role: Main power switch modulating primary-side current in transformer-isolated inverter with high di/dt demands (>1500 A/µs).

Use Value: 1560 A/µs (di/dt)_on at T_J = 175 °C and robust 300 A pulsed current rating support high-duty-cycle welding cycles without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N120B3	Higher V_CE(sat) (2.4 V typ.), lower Q_g (220 nC), same 1200 V/75 A rating and TO-247 package.	Better suited for higher-frequency (≥30 kHz) resonant converters where gate drive loss dominates over conduction loss.	Select when prioritizing reduced gate drive power over lowest conduction loss in medium-power SMPS.
Infineon IKW75N120H3	Lower E_off (2.8 mJ), higher V_CE(sat) (2.3 V), identical R_thJC and t_sc = 5 µs; also H3-series field-stop IGBT.	Optimized for hard-switched motor drives with frequent partial-load operation where switching loss reduction outweighs conduction penalty.	Prefer for variable-speed drives with wide load range and frequent PWM modulation below 10 kHz.

Compared with IXGN75N120B3 and IKW75N120H3, STGYA75H120DF2 offers the lowest V_CE(sat) (2.1 V) and best thermal resistance (0.2 °C/W), making it optimal for high-efficiency, thermally constrained solar and UPS inverters operating near full load.

Availability

STGYA75H120DF2 is available at Aetrix Electronics and suitable for solar inverters, UPS systems, and industrial welding equipment requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for high-reliability deployments.

Supply support for STGYA75H120DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's H-series high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and uninterruptible power systems where conduction–switching loss balance is critical.

FAQ

What is the maximum allowable gate-emitter voltage for STGYA75H120DF2?

The absolute maximum V_GE is ±20 V for continuous operation, with transient capability up to ±30 V for pulses ≤10 µs and duty cycle <0.01. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift, especially at elevated junction temperatures above 125 °C.

Can STGYA75H120DF2 be paralleled without external emitter resistors?

Yes-its slightly positive V_CE(sat) temperature coefficient ensures natural current sharing across devices operating at different junction temperatures. However, matched gate drive layout (equal trace inductance/resistance) and thermal coupling (shared heatsink) remain essential to prevent static imbalance during startup and transient loading.

What is the recommended gate resistor value for 15 kHz switching in a solar inverter half-bridge?

A 10 Ω gate resistor is validated in the datasheet for 600 V, 75 A inductive switching at 15 kHz, yielding t_d(on) = 61 ns and E_on = 4.3 mJ at T_J = 25 °C. For thermal margin at T_J = 175 °C, increase to 12–15 Ω to limit E_on rise while maintaining acceptable dV/dt control.

How does the integrated diode's reverse recovery performance change at 175 °C?

At T_J = 175 °C, trr increases from 356 ns to 595 ns and Q_rr rises from 2.6 µC to 6.9 µC-more than doubling-due to increased minority carrier lifetime. This elevates diode recovery loss to 2.85 mJ and requires careful snubber design or reduced switching frequency in high-temperature ambient environments.

STGYA75H120DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 150 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 75A

Power - Max:: 750 W

Switching Energy:: 4.3mJ (on), 3.9mJ (off)

Input Type:: Standard

Gate Charge:: 313 nC

Td (on/off) @ 25°C:: 61ns/366ns

Test Condition:: 600V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr):: 356 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGYA75H120DF2 FAQ

1.How can I place an order for STGYA75H120DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGYA75H120DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGYA75H120DF2 reliable?

The price and inventory of STGYA75H120DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGYA75H120DF2 is usually 5 days.

3.What payment methods are accepted for STGYA75H120DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGYA75H120DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGYA75H120DF2?

STGYA75H120DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGYA75H120DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGYA75H120DF2?

For technical support, including STGYA75H120DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGYA75H120DF2 requirements.

6.How does Aetrix verify that STGYA75H120DF2 is sourced from the original manufacturer or authorized distributors?

All STGYA75H120DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGYA75H120DF2 meets industry standards.

7.What is the process for return or replacement of STGYA75H120DF2?

All STGYA75H120DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGYA75H120DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGYA75H120DF2 part is unused and in its original packaging.

Return procedure for STGYA75H120DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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