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Infineon Technologies TDA21101G

Part No.:
TDA21101G
Manufacturer:
Infineon Technologies
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixTDA21101G.pdf
Description:
IC HALF BRIDGE DRIVER DSO8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,948

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Product details

Overview

TDA21101G from Infineon Technologies is a dual high-speed MOSFET gate driver IC for synchronous half-bridge topologies, featuring 4 A peak sink/source capability per output, <30 ns rise/fall times, adjustable high-side gate drive voltage (5–12 V), integrated bootstrap diode, and adaptive cross-conduction prevention. It targets multi-phase CPU VRMs on desktop and notebook motherboards.

For engineers reviewing the TDA21101G datasheet, TDA21101G pinout, TDA21101G application, or TDA21101G equivalent, key selection criteria include its 30 V floating high-side drive capability, PVCC-adjustable gate voltage for loss optimization, thermal shutdown at 150 °C, and 1:1 compatibility with HIP6601A/B in P-DSO-8 packaging.

Technical Context

This driver implements adaptive gate control logic to prevent shoot-through by dynamically adjusting turn-on/turn-off timing based on PHASE node voltage transitions. Its high-impedance PVCC pin enables external resistor-based tuning of high-side gate voltage between 5 V and 12 V-directly balancing conduction losses, gate charge energy, and switching losses.

The internal bootstrap diode eliminates an external component while supporting up to 30 V DC bias on the PHASE node. Propagation delays are tightly matched (td(ON)_HS: 58–70 ns; td(ON)_LS: 40–60 ns) and temperature-stable across –25 °C to 125 °C junction range, enabling reliable operation in high-frequency (up to 2 MHz), high-density VRM designs.

Key Specifications

ParameterValue and Actual Design Meaning
Peak Output Current4 A per channel (HS/LS), enabling fast charging of high-Qg MOSFETs in multi-phase CPU supplies
Rise/Fall Time17–34 ns (typ.), supporting clean switching at up to 2 MHz without excessive EMI
High-Side Floating Voltage30 V max (PHASE referenced), allowing use in 12 V input VRMs with margin
PVCC Adjustment Range5–12 V via high-Z pin, permitting fine-tuning of HS gate voltage to minimize total power loss
Thermal Shutdown Threshold150 °C (with 50 °C hysteresis), protecting against sustained overload in compact PCB layouts
Supply Voltage Range (VCC)10.8–13.2 V (±10% @ 12 V nominal), compatible with standard VRM auxiliary rails
Propagation Delay Match≤30 ns difference between HS/LS channels, critical for precise dead-time control in synchronous rectification

Pinout & Package

Packaged in P-DSO-8 (plastic dual small-outline, 8-pin, exposed pad), this SOIC-compatible surface-mount package supports thermal dissipation up to 0.8 W at 25 °C ambient and features gull-wing leads for automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
GATEHS (Pin 1)High-side N-MOS gate driver outputDrives gate of upper MOSFET in half-bridge; clamped to 10 V when PVCC > 10 V
BOOT (Pin 2)Floating bootstrap supply nodeConnects to external capacitor; generates gate drive voltage above PHASE for high-side N-MOS
PWM (Pin 3)Digital input control signalAccepts standard PWM logic (1.8–3.0 V shut-down window); open-circuit triggers safe shutdown
GND (Pin 4)Power and signal reference groundCommon return for VCC, PVCC, and output stages; requires low-inductance layout
GATELS (Pin 5)Low-side N-MOS gate driver outputDirectly drives lower MOSFET gate; complements HS drive with matched timing
VCC (Pin 6)Main power supply input10.8–13.2 V supply for internal logic and output stages; powers bootstrap circuitry
PVCC (Pin 7)High-impedance gate voltage adjustResistor-divider programmable input sets HS gate voltage (5–12 V) to optimize efficiency
PHASE (Pin 8)Half-bridge switching nodeConnects to HS/LS MOSFET drain-source junction; referenced for BOOT and internal level-shifting

Key Features

FeatureDesign Value
Integrated Bootstrap DiodeEliminates external diode, reducing BOM count and PCB area in space-constrained VRM modules
Adaptive Cross-Conduction PreventionHardware-level timing control prevents simultaneous HS/LS conduction under dynamic load transients
Three-State Input ShutdownQuiescent current drops to 4.5 mA when PWM input held in 1.8–3.0 V window, enabling system-level power gating
1:1 Pin Compatibility with HIP6601A/BEnables drop-in replacement in legacy motherboard designs without layout revision
Thermal Protection with HysteresisShuts down at 150 °C and re-enables only after cooling to 100 °C, preventing thermal cycling damage

Applications

Desktop CPU VRMNotebook CPU VRM

Use Scenario: Multi-phase buck converter delivering 1–2 V @ 100+ A to Intel/AMD desktop CPUs on ATX motherboards.

IC Role / Device Role / Timing Role: Dual gate driver controlling parallel high-side/low-side N-MOSFET pairs per phase; synchronized to PWM controller with sub-70 ns propagation delay.

Use Value: Enables >90% efficiency at 500 kHz–1 MHz switching with minimal dead-time penalty due to matched HS/LS timing.

Use Scenario: Compact 2–3 phase VRM on thin-and-light laptop motherboards with strict thermal and area constraints.

IC Role / Device Role / Timing Role: High-density gate driver with integrated bootstrap diode and 30 V PHASE rating, supporting 12 V input rail operation.

Use Value: Reduces component count by one diode per phase and maintains stable gate drive despite battery voltage sag during turbo boost.

Motor Drive Half-BridgeClass-D Audio Amplifier

Use Scenario: Low-voltage BLDC motor driver stage in fan or pump controllers requiring robust shoot-through protection.

IC Role / Device Role / Timing Role: Gate driver for N-N half-bridge with adaptive dead-time control and thermal shutdown at 150 °C.

Use Value: Prevents MOSFET destruction during rapid direction reversal or stall conditions via hardware-level conduction blocking.

Use Scenario: High-fidelity Class-D amplifier output stage operating at 300–500 kHz with low THD+N requirements.

IC Role / Device Role / Timing Role: Fast-switching gate driver delivering <30 ns edge rates to minimize switching distortion in audio band.

Use Value: Achieves <0.01% THD+N by minimizing gate drive asymmetry and propagation skew between HS/LS paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
HIP6601AIdentical pinout and function; no PVCC adjustment-fixed 10 V HS gate driveLacks tunable gate voltage; higher conduction loss in low-Rds(on) MOSFETsSelect when design uses legacy HIP6601A layout and fixed 10 V drive suffices
IR2110SHigher VBS rating (600 V), but slower (120 ns typical rise), no integrated bootstrap diode, SOIC-14 packageSuited for high-voltage industrial half-bridges, not optimized for high-frequency VRMsSelect only for >100 V bus applications where TDA21101G's 30 V PHASE limit is insufficient

Compared with HIP6601A and IR2110S, the TDA21101G uniquely combines VRM-optimized speed (<34 ns edges), integrated bootstrap diode, and programmable HS gate voltage-enabling superior efficiency in 12 V-input, multi-phase CPU power delivery where layout density and thermal margin are critical.

Availability

TDA21101G is available at Aetrix Electronics and suitable for desktop CPU VRMs, notebook CPU VRMs, motor drive half-bridges, and Class-D audio amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for TDA21101G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global R&D and manufacturing infrastructure.

The TDA21101G belongs to Infineon's high-speed gate driver product line, engineered specifically for high-efficiency, high-frequency synchronous buck converters in computing power delivery systems.

FAQ

What is the maximum allowable voltage on the PHASE pin?

The PHASE pin supports a DC voltage range of –15 V to +30 V relative to GND. This 30 V maximum enables safe operation in 12 V input VRMs with sufficient headroom for ringing and overshoot. Exceeding 30 V risks permanent damage to the internal level-shifting circuitry and bootstrap clamp structure.

How does the PVCC pin adjust high-side gate voltage?

The PVCC pin is a high-impedance input that sets the high-side gate drive voltage via an external resistor divider from VCC. When PVCC = 5 V, HS gate drive is ~5 V; at PVCC = 12 V, it reaches 10 V (internally clamped). This allows real-time trade-off between Rds(on) loss, gate charge loss, and switching loss.

Does the TDA21101G require an external bootstrap diode?

No. The TDA21101G integrates a bootstrap diode internally, connecting VCC to BOOT during low-side conduction. This eliminates the need for an external diode, reducing component count and PCB footprint-critical for dense VRM layouts where every mm² matters.

What happens when the PWM input is left floating or disconnected?

When the PWM input is open (e.g., controller powered down or in high-Z state), the internal circuit detects VPWM ≈ 2.0 V and activates shutdown mode: both GATEHS and GATELS outputs disable, forcing MOSFETs OFF. This failsafe behavior prevents unintended switching and ensures system safety during controller initialization or fault conditions.

TDA21101G Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Output Configuration:
Half Bridge
Applications:
DC-DC Converters
Interface:
PWM
Load Type:
Inductive
Technology:
Power MOSFET
Rds On (Typ):
-
Current - Output / Channel:
-
Current - Peak Output:
4A
Voltage - Supply:
10.8V ~ 13.2V
Voltage - Load:
5V ~ 13.2V
Operating Temperature:
-25°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Features:
Bootstrap Circuit
Fault Protection:
Over Temperature, UVLO
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8

TDA21101G FAQ

1.How can I place an order for TDA21101G through Aetrix?

Please submit a Request for Quotation (RFQ) for TDA21101G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TDA21101G reliable?

The price and inventory of TDA21101G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TDA21101G is usually 5 days.

3.What payment methods are accepted for TDA21101G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TDA21101G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TDA21101G?

TDA21101G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TDA21101G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TDA21101G?

For technical support, including TDA21101G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TDA21101G requirements.

6.How does Aetrix verify that TDA21101G is sourced from the original manufacturer or authorized distributors?

All TDA21101G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TDA21101G meets industry standards.

7.What is the process for return or replacement of TDA21101G?

All TDA21101G units undergo pre-shipment inspection (PSI). If there is an issue with TDA21101G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TDA21101G part is unused and in its original packaging.

Return procedure for TDA21101G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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