Infineon Technologies TDA21201B7T

Overview

TDA21201B7T from Infineon Technologies is an integrated power stage combining a MOSFET driver, high-side and low-side Power MOSFETs, and internal bootstrap circuitry in a single TO-263-7-2 package. It delivers up to 30 A DC output current for 12 V to sub-3.3 V synchronous buck conversion, features 4.8 mΩ low-side R_DS(on) at 25 °C, 13.3 mΩ high-side R_DS(on), and built-in over-temperature shutdown at 150 °C - deployed in multi-phase VRMs on server motherboards.

For engineers reviewing the TDA21201B7T datasheet, TDA21201B7T pinout, TDA21201B7T application, or TDA21201B7T equivalent, key selection criteria include its integrated bootstrap capability, three-state input for shutdown control, compatibility with standard 5 V TTL PWM controllers, and thermal resistance (R_thjc = 1.9 K/W) critical for high-density motherboard power delivery.

Technical Context

The TDA21201B7T implements a fully self-contained synchronous buck power stage with monolithic integration of gate driver logic, high-side and low-side silicon, and internal charge pump for high-side FET drive - eliminating external bootstrap diodes and capacitors. Its input accepts standard 5 V TTL-level PWM signals, with a dedicated 1.2–1.6 V shutdown window that disables both FETs while drawing only 10–22 mA supply current.

Thermal protection is tightly coupled across all die via shared substrate, enabling coordinated over-temperature shutdown at ~150 °C. The device operates across 9–15 V V_CC, exhibits smooth functional ramp-up without abrupt UVLO thresholds, and supports current sensing via voltage drop across GND–V_OUT (low-side) or V_CC–V_OUT (high-side) terminals during respective on-times.

Key Specifications

Pinout & Package

Package: TO-263-7-2 (D²PAK), surface-mount, thermally enhanced with exposed tab (Pin 4) serving as V_OUT and primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar integrated power stage applications.

Compared with IR35201MTRPBF and MP86957GQZ, the TDA21201B7T uniquely combines full PWM controllability, internal bootstrap, and monolithic thermal protection - making it the only option among the three qualified for scalable, high-reliability multi-phase motherboard VRMs.

Availability

TDA21201B7T is available at Aetrix Electronics and suitable for server VRMs, high-density motherboard power delivery, and industrial FPGA core supplies requiring stable component supply and long-term lifecycle support.

Supply support for TDA21201B7T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and GaN-based power stages.

The TDA21201 belongs to Infineon's Integrated Power Stage (IPS) product line, engineered specifically for high-efficiency, high-current DC/DC conversion in computing infrastructure - targeting reduced BOM count and improved thermal reliability in multi-phase VRMs.

FAQ

What is the function of the dual V_CC pins (6 and 7)?

Pins 6 and 7 are paralleled V_CC inputs supplying power to the internal gate driver and logic. Their duplication lowers effective supply impedance and enables ∆V_CC fault detection: if voltage difference exceeds 0.45 V for >2 µs, the device disables to prevent operation under faulty solder joints or open traces - a hardware-level safety feature not found in discrete alternatives.

Can the TDA21201B7T be used in single-phase applications?

Yes - the TDA21201B7T is fully functional in single-phase buck converters delivering up to 30 A. Its integrated design eliminates external bootstrap components and simplifies layout, making it ideal for compact point-of-load regulators in networking equipment or storage controllers where space and thermal performance are constrained.

How does the shutdown mode affect power consumption?

In shutdown mode (IN = 1.2–1.6 V for >1.5 µs), both MOSFETs turn off and driver bias current drops to 10–22 mA. Gate charge circulation ceases, eliminating dynamic switching loss and reducing quiescent power to <264 mW (12 V × 22 mA), significantly improving light-load efficiency in burst-mode VRM operation.

Is external current sensing supported, and how is it implemented?

Yes - low-side current sensing is performed across GND (Pins 1–3) and V_OUT (Pin 4/tab) during low-side FET conduction (IN = Low); high-side sensing uses V_CC (Pins 6–7) and V_OUT during high-side conduction (IN = High). No external shunt resistor is needed, and the integrated path ensures accurate, low-noise measurement aligned with PWM timing.