Texas Instruments UCC27288DR

Overview

UCC27288DR from Texas Instruments is a 3-A, 120-V half-bridge gate driver IC for high-side/low-side N-channel MOSFET control in synchronous buck and half-bridge topologies. It features 16-ns typical propagation delay, ±3-A peak output current, 8-V typical UVLO on VDD, and operates from –40°C to 140°C junction temperature-enabling high-efficiency solar power optimizers and server PSUs.

For engineers reviewing the UCC27288DR datasheet, UCC27288DR pinout, UCC27288DR application, or UCC27288DR equivalent, key selection considerations include bootstrap diode configurability, HS node voltage tolerance (–14 V transient), delay matching (1-ns typical), and SOIC8 package suitability for industrial thermal and layout constraints.

Technical Context

The UCC27288DR integrates independent TTL/CMOS-compatible HI and LI inputs with a robust level shifter enabling HO operation referenced to the HS node up to 100 V DC. Its dual UVLO circuits monitor both VDD (7.0-V typical rising threshold) and HB–HS (6.3-V typical rising threshold) to independently disable LO and HO under undervoltage conditions.

Output stages use totem-pole NMOS-PMOS structures delivering 12-ns rise and 10-ns fall times into 1800-pF loads, with no internal bootstrap diode-requiring external ≥100-V-rated diode and 0.1-μF HB bypass capacitor. Input pins tolerate –5-V absolute minimum, and HS withstands –14-V transients for enhanced system robustness.

Key Specifications

Pinout & Package

UCC27288DR is housed in an SOIC-8 package (6 mm × 5 mm) with standard 1.27-mm pitch, optimized for thermal performance and PCB layout robustness in high-voltage switching applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with UCC27288DR, UCC27289DR offers identical timing and drive strength but higher UVLO thresholds for improved noise immunity in noisy 48-V systems, while IRS2005M trades speed and current for integration and voltage rating-making it unsuitable for high-efficiency, high-frequency 100-V DC-DC designs.

Availability

UCC27288DR is available at Aetrix Electronics and suitable for solar power optimizers, merchant server PSUs, and telecom rectifiers requiring stable component supply, extended temperature support, and high-voltage gate drive reliability.

Supply support for UCC27288DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability industrial and power conversion solutions.

The UCC27288DR belongs to TI's high-voltage gate driver product line, engineered specifically for efficient, robust control of N-channel MOSFETs in 100-V-class DC-DC and motor drive topologies demanding precision timing and thermal resilience.

FAQ

What is the maximum allowable voltage on the HS pin of the UCC27288DR?

The UCC27288DR specifies a maximum DC voltage of 100 V on the HS pin with respect to VSS, and tolerates –14 V transients (pulse width <100 ns). Exceeding 100 V DC violates absolute maximum ratings and risks permanent damage. The device also monitors HB–HS voltage, requiring it to remain ≤16 V during operation to ensure proper UVLO function and reliability of the level shifter.

Does the UCC27288DR include an integrated bootstrap diode?

No, the UCC27288DR does not include an integrated bootstrap diode. It requires an external ≥100-V-rated diode connected between VDD (anode) and HB (cathode). This design allows system designers to select diodes optimized for reverse recovery (Qrr), forward voltage, and thermal performance-critical for efficiency in high-frequency 100-V applications. The UCC27288DR datasheet explicitly states "No integrated bootstrap diode" in Section 3.

What is the purpose of the independent HI and LI inputs on the UCC27288DR?

The independent HI and LI inputs on the UCC27288DR enable full flexibility in dead-time control, allowing overlapping drive signals, custom commutation sequences (e.g., six-step BLDC), and MCU-based timing optimization. Unlike single-input drivers, this architecture eliminates fixed internal dead time, reduces propagation delay penalty, and supports advanced modulation schemes-directly improving efficiency in UCC27288DR-based synchronous buck and half-bridge converters.

How does the UCC27288DR handle undervoltage conditions on its power rails?

The UCC27288DR implements dual independent UVLO circuits: one monitors VDD (7.0-V typical rising threshold) and forces both HO and LO low during under-voltage, while the second monitors HB–HS voltage (6.3-V typical rising threshold) and disables only HO if bootstrap supply is insufficient. This ensures safe, partial-fault operation-LO remains functional for low-side control even if high-side bootstrap fails-enhancing system robustness in UCC27288DR-based power stages.

What thermal metrics apply to the UCC27288DR in SOIC-8 package?

The UCC27288DR in SOIC-8 (D package) has a junction-to-ambient thermal resistance (RθJA) of 118.3°C/W, junction-to-board (RθJB) of 63.1°C/W, and junction-to-case (top) (RθJC(top)) of 53.6°C/W. These values assume standard JEDEC 2-layer board conditions. For continuous 3-A peak current operation at 140°C junction, PCB copper area and thermal vias beneath the exposed pad (if used) must be optimized-though the SOIC-8 variant lacks an exposed thermal pad, making board-level copper and airflow critical for UCC27288DR thermal management.