Texas Instruments UCC27289DRCR

Overview

UCC27289DRCR from Texas Instruments is a 3-A peak, 120-V half-bridge gate driver IC for N-channel MOSFETs in high-side/low-side configuration, featuring 16-ns typical propagation delay, ±3-A source/sink current, integrated 100-V bootstrap diode, and –14-V HS negative voltage tolerance - deployed in solar microinverters and DC-input BLDC motor drives.

For engineers reviewing the UCC27289DRCR datasheet, UCC27289DRCR pinout, UCC27289DRCR application, or UCC27289DRCR equivalent, key selection criteria include dual independent TTL/CMOS-compatible inputs, 8-V UVLO with hysteresis on both VDD and HB–HS rails, 1-ns typical delay matching, and SON10 (3 mm × 3 mm) thermal-pad package for high-density power stage layouts.

Technical Context

The UCC27289DRCR implements a robust level-shifting architecture to drive the high-side output referenced to the switch node (HS), enabling operation up to 100 V with respect to VSS while maintaining tight 1-ns delay matching between HO and LO channels. Its independent HI/LI inputs allow overlapping drive signals and eliminate fixed dead-time logic.

UVLO protection operates separately on VDD (7.0-V rising threshold) and HB–HS (6.3-V rising threshold), ensuring safe startup and fault response. The integrated bootstrap diode supports self-biased high-side gate drive without external discrete diodes, reducing BOM count and PCB area in compact half-bridge designs.

Key Specifications

Pinout & Package

UCC27289DRCR uses a 10-pin SON package (3 mm × 3 mm, 0.5-mm pitch) with exposed thermal pad soldered to PCB ground plane for enhanced thermal dissipation (R_θJA = 47.3°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with UCC27282DRCR and LM5113SD/NOPB, the UCC27289DRCR uniquely combines EN functionality, integrated bootstrap diode, and 3-A drive in a 3-mm × 3-mm SON package - delivering lowest BOM count and smallest footprint for 100-V half-bridge applications requiring robustness and design simplicity.

Availability

UCC27289DRCR is available at Aetrix Electronics and suitable for solar microinverters, server PSUs, and DC-input BLDC motor drives requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for UCC27289DRCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power conversion solutions.

The UCC27289DRCR belongs to TI's high-voltage gate driver product line, engineered specifically for efficient, robust, and compact half-bridge and synchronous buck power stages in renewable energy, computing, and industrial motor control.

FAQ

What is the maximum allowable voltage on the HB pin of the UCC27289DRCR?

The absolute maximum voltage on the HB pin of the UCC27289DRCR is 120 V with respect to VSS. This rating enables reliable operation in 100-V-class half-bridge topologies where bootstrap voltage overshoot may occur during fast switching transitions. Exceeding 120 V risks permanent damage to the internal bootstrap diode and level-shifter circuitry. Designers must ensure that VHB remains within this limit under all operating and fault conditions, including transients.

Does the UCC27289DRCR require an external bootstrap diode?

No, the UCC27289DRCR integrates a 100-V-rated bootstrap diode, eliminating the need for an external diode in most applications. This reduces component count, PCB area, and gate-drive loop inductance. An external diode may still be used if higher reverse-voltage rating (>100 V), lower forward voltage, or enhanced thermal handling is required - but it is not mandatory for standard 100-V half-bridge implementations using the UCC27289DRCR.

How does the EN pin function on the UCC27289DRCR?

The EN pin on the UCC27289DRCR is an active-high enable input with built-in 250-kΩ pulldown resistor. When pulled above 2.0 V, it enables both HO and LO outputs; when ≤1.21 V or floating, it disables outputs and reduces supply current to 7 μA. It supports direct interface with MCU GPIOs or analog comparator outputs, and a 1-nF capacitor to VSS is recommended in electrically noisy environments to suppress false triggering.

What is the purpose of the dual UVLO protection in the UCC27289DRCR?

The UCC27289DRCR features separate UVLO circuits for VDD (low-side supply) and HB–HS (bootstrap supply). VDD UVLO (7.0-V rising threshold) prevents both outputs from activating during insufficient low-side bias; HB–HS UVLO (6.3-V rising threshold) disables only HO when bootstrap voltage is inadequate - preventing high-side shoot-through while allowing low-side operation for fault diagnostics. This dual monitoring enhances system safety and fault resilience.

Can the UCC27289DRCR drive SiC MOSFETs?

Yes, the UCC27289DRCR can drive SiC MOSFETs in half-bridge configurations, provided gate resistance and layout minimize ringing. Its ±3-A peak output current, 12/10-ns rise/fall times (with 1800-pF load), and 16-ns propagation delay meet typical SiC gate-drive requirements for 100-V-class devices. However, designers must verify gate-loop inductance, add gate-source clamping if needed, and confirm that the 120-V HB rating accommodates SiC-specific bootstrap voltage margins.