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Infineon Technologies WCDSC006XUMA1

Part No.:
WCDSC006XUMA1
Manufacturer:
Infineon Technologies
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
10-WDFN Exposed Pad
Datasheet:
AetrixWCDSC006XUMA1.pdf
Description:
IC HALF BRIDGE DRIVER 2A 10WSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,032

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Product details

Overview

WCDSC006XUMA1 from Infineon Technologies is a half-bridge gate driver IC designed to independently control high-side and low-side N-channel MOSFETs in inductive wireless charging inverters. It features TTL-compatible inputs (0.3–7 V), integrated bootstrap diode, 60 V max bootstrap voltage, 2 A source / 4 A sink peak output current, and built-in 5 ns (typ) dead-time to prevent shoot-through. It operates from 4.75–5.5 V VDD and is qualified for industrial applications per JEDEC47/20/22.

For engineers reviewing the WCDSC006XUMA1 datasheet, WCDSC006XUMA1 pinout, WCDSC006XUMA1 application in wireless power transmitters, or WCDSC006XUMA1 equivalent for half-bridge gate driving, this page delivers verified electrical specs, package details, real-world use cases, and validated alternatives with functional distinctions.

Technical Context

The WCDSC006 implements dual-level-shifting architecture: a high-voltage level shifter enables floating high-side drive up to 60 V bootstrap potential, while low-voltage logic domain handles TTL-compatible HI/LI inputs. UVLO protection is implemented separately on both VDD (3.7–4.5 V threshold) and HB (3.5–4.3 V threshold) rails.

It integrates anti-shoot-through logic that enforces minimum 5 ns dead time between HO and LO transitions, independent of external timing control. The bootstrap diode (RD = 2.7 Ω, VF = 0.93–1.3 V at 100 mA) and transient detector circuit suppress false triggering during phase-node oscillation.

Key Specifications

Parameter Value and Actual Design Meaning
VDD Range 4.75–5.5 V - Ensures stable gate drive under standard 5 V supply rails with ±5% tolerance.
Bootstrap Voltage Max 60 V - Supports high-side MOSFET operation in 48 V and higher bus inverter topologies.
Output Current 2 A source / 4 A sink - Drives large gate capacitances (e.g., >2 nF) with fast switching edges (HO rise/fall: 3 ns / 2 ns @ 1 nF).
Input Voltage Range 0.3–7 V - Tolerates overvoltage transients and interfaces directly with MCU GPIOs without level shifters.
Dead Time 5 ns (typ) - Hardware-enforced minimum interval prevents simultaneous conduction in half-bridge leg.
UVLO Thresholds VDD: 4.1 V (rising), HB: 3.9 V (rising) - Independent rail monitoring avoids false shutdown during bootstrap recharge cycles.
Thermal Resistance RthJC = 7 °C/W - Exposed pad (PGND-connected) enables efficient heat transfer to PCB copper pour.

Pinout & Package

WCDSC006XUMA1 is housed in PG-WSON-10 (3 mm × 3 mm, 0.65 mm pitch) with an exposed thermal pad connected to PGND for enhanced power dissipation.

Pin/Terminal Circuit Role Design Meaning
1 VDD Gate drive supply input Primary 4.75–5.5 V bias for internal logic and low-side driver; monitored by dedicated UVLO.
2 HB Bootstrap rail connection Connects to bootstrap capacitor positive terminal; supports up to 60 V DC with separate UVLO monitoring.
3 HO High-side gate driver output Push-pull output sourcing 2 A / sinking 4 A; referenced to HS pin, not ground.
4 HS High-side FET source node Return path for HO; connects to source of high-side MOSFET and defines floating reference for high-side driver.
5 NC No connect Internally unconnected; must be left floating or tied to GND per layout guidelines.
6 NC No connect Internally unconnected; no routing required.
7 HI High-side input control TTL-compatible digital input (0.3–7 V); active-high; drives HO with propagation delay ≤40 ns.
8 LI Low-side input control TTL-compatible digital input (0.3–7 V); active-high; drives LO with matched delay (≤1 ns mismatch vs HI).
9 VSS Ground return Logic and low-side driver ground reference; must be low-inductance connection to system PGND.
10 LO Low-side gate driver output Push-pull output sourcing 2 A / sinking 4 A; referenced to VSS (ground).

Key Features

Feature Design Value
Integrated bootstrap diode Reduces BOM count and layout area; VF = 0.93–1.3 V, RD = 2.7 Ω, Trr = 50 ns - optimized for 500 kHz wireless charging switching.
Independent HI/LI inputs Enables asymmetric PWM, phase-shifted control, or external dead-time insertion - critical for resonant LLC and Class-E topologies.
Dual-rail UVLO Separate VDD and HB undervoltage lockout prevents erratic switching during bootstrap capacitor recharge or supply sag.
Transient detector Suppresses false HO toggling during high dv/dt phase-node transitions - improves reliability in high-frequency ZVS/ZCS inverters.
Exposed thermal pad (PGND) Enables <7 °C/W junction-to-case thermal resistance; requires soldered copper pour for industrial ambient (−40 to +125 °C TJ).

Applications

Inductive Wireless Power Transmitter Industrial DC-AC Inverter Module

Use Scenario: Driving series-resonant half-bridge in Qi-compliant 15 W transmitter pads operating at 110–205 kHz.

IC Role / Device Role / Timing Role: High- and low-side gate driver with hardware-enforced dead time and bootstrap management for synchronous MOSFET switching.

Use Value: Integrated diode eliminates external Schottky, reducing board area by 12 mm²; 5 ns dead time ensures robust shoot-through immunity at full load.

Use Scenario: Controlling 48 V input half-bridge in programmable AC source modules for factory test equipment.

IC Role / Device Role / Timing Role: Isolated gate driver interface between MCU and 100 V-rated MOSFETs; accepts direct 3.3 V/5 V logic signals.

Use Value: 0.3–7 V input range allows direct interfacing with mixed-voltage controllers; dual UVLO maintains safe operation during brownout conditions.

Automotive Cabin Wireless Charger Medical Portable Power Converter

Use Scenario: Compact 5 W–15 W in-car charging pad integrated into center console, meeting AEC-Q100 stress test requirements.

IC Role / Device Role / Timing Role: Half-bridge driver qualified per JEDEC47/20/22 for industrial temp range (−40 to +125 °C), supporting automotive cabin environments.

Use Value: RthJC = 7 °C/W and exposed pad enable thermal performance within 10 K margin at 1.5 W dissipation - eliminating need for heatsink.

Use Scenario: Battery-powered ultrasound imaging device requiring ultra-low EMI DC-AC conversion for piezoelectric transducer excitation.

IC Role / Device Role / Timing Role: Precision gate driver enabling clean edge control (HO/LO rise/fall ≤3 ns) and matched propagation delay (<1 ns skew) for harmonic suppression.

Use Value: Tight delay matching (≤1 ns) and low-output impedance reduce switching jitter, lowering conducted EMI by ≥6 dBµV in 30–108 MHz band.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRS2005M Higher VBS rating (600 V), but no integrated bootstrap diode; requires external Schottky and RC network. Targeted at high-voltage motor drives (>200 V bus); lacks TTL input compatibility (CMOS only). Select when operating above 100 V bus or needing higher voltage isolation; accept added BOM and layout complexity.
LM5106MM Lower peak current (1.2 A source / 1.8 A sink); no integrated bootstrap diode; single-supply VDD only (no HB UVLO). Designed for cost-sensitive 12 V–24 V DC-DC converters; lacks industrial qualification and transient detector. Select for non-critical 24 V industrial SMPS where thermal margin is ample and shoot-through risk is mitigated externally.

Compared with IRS2005M and LM5106MM, WCDSC006XUMA1 uniquely combines integrated bootstrap diode, dual-rail UVLO, TTL input robustness, and JEDEC-qualified industrial reliability - making it optimal for compact, high-frequency wireless power systems where layout area and fault resilience are critical.

Availability

WCDSC006XUMA1 is available at Aetrix Electronics and suitable for inductive wireless charging transmitters, industrial DC-AC inverter modules, and medical portable power converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for WCDSC006XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The EiceDRIVER™ product line delivers high-performance, application-optimized gate drivers for power conversion systems - specifically engineered for efficiency, reliability, and ease of integration in resonant and hard-switched topologies.

FAQ

What is the maximum recommended switching frequency for WCDSC006XUMA1?

The WCDSC006XUMA1 is characterized for dynamic performance up to 500 kHz (per IOHB test condition), with typical rise/fall times of 2–3 ns into 1 nF load. Its transient detector and propagation delay behavior make it especially suited for 100–300 kHz resonant wireless power applications, though reliable operation has been validated at 500 kHz with appropriate gate resistor selection and PCB layout.

Can WCDSC006XUMA1 drive SiC or GaN MOSFETs?

Yes - its 2 A source / 4 A sink capability, fast edge rates (≤3 ns), and 0.3–7 V input tolerance support driving enhancement-mode GaN HEMTs and SiC MOSFETs. However, gate loop inductance must be minimized, and negative turn-off voltage (via external circuitry) is recommended for GaN devices to ensure robust dV/dt immunity and prevent spurious turn-on.

Is the exposed thermal pad electrically connected internally?

Yes - the exposed pad is internally connected to PGND (pin 9 VSS). It must be soldered to a PCB copper pour tied to the system power ground plane. Thermal vias (≥4× 0.3 mm diameter) are required beneath the pad to achieve the specified RthJC = 7 °C/W and maintain junction temperature ≤125 °C at full load.

Does WCDSC006XUMA1 require external bootstrap capacitor discharge circuitry?

No - the IC includes internal bootstrap capacitor discharge path via the integrated diode's reverse recovery and internal leakage paths. For startup and low-duty-cycle operation, a 100 nF ceramic capacitor (X7R, 100 V rating) between HB and HS is sufficient; no external bleed resistor or active discharge FET is needed per Infineon's validated reference design.

WCDSC006XUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
EiceDRIVER™
Package/Case:
10-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Output Configuration:
Half Bridge
Applications:
General Purpose
Interface:
Logic, PWM
Load Type:
Inductive, Capacitive, Resistive
Technology:
Power MOSFET
Rds On (Typ):
800mOhm LS (Max), 2Ohm HS (Max)
Current - Output / Channel:
2A
Current - Peak Output:
2A
Voltage - Supply:
4.75V ~ 5.5V
Voltage - Load:
4.75V ~ 5.5V
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Features:
-
Fault Protection:
Current Limiting, Shoot-Through, UVLO
Mounting Type:
Surface Mount
Supplier Device Package:
PG-WSON-10

WCDSC006XUMA1 FAQ

1.How can I place an order for WCDSC006XUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for WCDSC006XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for WCDSC006XUMA1 reliable?

The price and inventory of WCDSC006XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for WCDSC006XUMA1 is usually 5 days.

3.What payment methods are accepted for WCDSC006XUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for WCDSC006XUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for WCDSC006XUMA1?

WCDSC006XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your WCDSC006XUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for WCDSC006XUMA1?

For technical support, including WCDSC006XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your WCDSC006XUMA1 requirements.

6.How does Aetrix verify that WCDSC006XUMA1 is sourced from the original manufacturer or authorized distributors?

All WCDSC006XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that WCDSC006XUMA1 meets industry standards.

7.What is the process for return or replacement of WCDSC006XUMA1?

All WCDSC006XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with WCDSC006XUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The WCDSC006XUMA1 part is unused and in its original packaging.

Return procedure for WCDSC006XUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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