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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Renesas 2SC5509-T2-A

Name: 2SC5509-T2-A
Brand: Renesas
SKU: 2SC5509-T2-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC5509-T2-A

Manufacturer:: Renesas

Category:: Bipolar RF Transistors

Package:: SC-82A, SOT-343

Datasheet:: 2SC5509-T2-A.pdf

Description:: SMALL SIGNAL BIPOLAR TRANSISTOR

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC5509-T2-A from Renesas Electronics is an NPN silicon RF transistor designed for medium-output-power, low-noise, high-gain amplification in 2 GHz wireless systems. It delivers NF = 1.2 dB TYP., Ga = 12 dB TYP., MAG = 14 dB TYP. at V_CE = 2 V, and features f_T = 25 GHz technology in a flat-lead 4-pin thin-type super minimold (M04) package.

For engineers reviewing the 2SC5509-T2-A datasheet, 2SC5509-T2-A pinout, 2SC5509-T2-A application, or 2SC5509-T2-A equivalent, this device is selected for RF front-end gain stages where noise figure, power gain, and 2 GHz bandwidth must be simultaneously optimized in compact SMT layouts.

Technical Context

This transistor employs high-frequency silicon epitaxial process technology to achieve f_T = 25 GHz and supports stable RF amplification up to 2.5 GHz. Its low Cre = 0.5 pF TYP. at V_CB = 2 V and h_FE = 50–100 at I_C = 10 mA enable precise biasing and impedance matching in narrowband LNA and driver stages.

The device operates with V_CEO = 3.3 V and P_tot = 190 mW (free air), requiring thermal management on ceramic substrates for sustained 2 GHz output. Its noise parameters (NF_min = 1.1 dB at 2 GHz, Γ_opt provided) support optimal source impedance design for minimal system noise figure.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	3.3 V - Maximum safe collector-emitter voltage under DC operation; defines upper limit for supply rail in RF amplifier stages.
NF	1.2 dB TYP. @ 2 GHz - Low noise figure enables high-sensitivity receiver front-ends without degrading system SNR.
MAG	14 dB TYP. @ 2 GHz - Maximum available power gain determines achievable stage gain before stability compensation is required.
f_T	25 GHz - Gain-bandwidth product confirms suitability for 2 GHz amplification with margin for layout parasitics and temperature drift.
Cre	0.5 pF TYP. @ V_CB = 2 V - Low reverse transfer capacitance reduces Miller effect, supporting wideband stability and high-frequency matching.
P_tot	190 mW (free air) - Thermal dissipation limit governs maximum continuous RF output power and PCB copper area requirements.
OIP3	27 dBm @ 2 GHz - Third-order intercept point quantifies linearity for handling modulated signals like QPSK or OFDM without distortion.

Pinout & Package

Package: Flat-lead 4-pin thin-type super minimold (M04), Pb-free, 8 mm embossed tape, pin 1 (Emitter) and pin 2 (Collector) face tape perforation side.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Primary current sink; connected to RF ground or emitter degeneration network for stability and linearity control.
2	Collector	RF output node; requires impedance-matched transmission line and DC blocking capacitor for AC coupling.
3	Emitter	Second emitter terminal - internally tied to Pin 1; used for dual-emitter thermal symmetry or parallel connection in high-reliability designs.
4	Base	RF input control node; biased via resistive divider or RF choke; sensitive to parasitic inductance due to high f_T.

Key Features

Feature	Design Value
Low-noise amplification	NF = 1.2 dB TYP. at 2 GHz enables receiver sensitivity down to −115 dBm in 20 MHz LTE channels.
High power gain	MAG = 14 dB TYP. at 2 GHz allows single-transistor gain stages to replace multi-stage designs, reducing BOM count.
Thermal robustness	R_{th j-c} = 95 °C/W enables 150 °C junction operation with minimal heatsinking on 15 × 15 mm ceramic substrates.
Stable RF performance	MSG = 15 dB TYP. at 2 GHz ensures unconditional stability under matched terminations without external stabilization networks.
Pb-free M04 package	Flat-lead 4-pin thin-type super minimold meets RoHS and provides consistent coplanarity (<0.1 mm) for reliable reflow soldering.

Applications

Wi-Fi 2.4 GHz Power Amplifier	ISM Band Receiver LNA
Use Scenario: Final-stage PA in 802.11b/g/n access point RF modules operating at 2.412–2.472 GHz. IC Role / Device Role / Timing Role: Medium-output-power RF transistor delivering +20 dBm saturated output with OIP3 = 27 dBm. Use Value: Enables 10% EVM-compliant 64-QAM transmission while maintaining 1.2 dB NF for receive-path co-location.	Use Scenario: First-stage low-noise amplifier in 2.4 GHz ISM band sensor transceivers (e.g., Zigbee, Bluetooth LE). IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter LNA with Γ_opt-matched input network. Use Value: Achieves system NF < 2.0 dB with Ga = 12 dB, extending receiver range by ≥3 dB over standard SiGe alternatives.
UWB Pulse Amplifier	5G NR Sub-6 GHz Driver
Use Scenario: Pulse-amplifying stage in ultra-wideband (UWB) ranging modules covering 3.1–4.8 GHz. IC Role / Device Role / Timing Role: High-linearity RF transistor biased for Class A operation with 100 mA I_C quiescent current. Use Value: Delivers flat \|S₂₁\| response ±1.5 dB across 1.7 GHz bandwidth, preserving pulse fidelity for TOF accuracy.	Use Scenario: Driver amplifier in 3.5 GHz 5G NR base station small-cell front-ends. IC Role / Device Role / Timing Role: Medium-gain, low-distortion transistor providing 14 dB MAG before final GaN PA stage. Use Value: Supports 100 MHz signal bandwidth with OIP3 = 27 dBm, enabling 256-QAM modulation without adjacent channel leakage.

Wi-Fi 2.4 GHz Power Amplifier

ISM Band Receiver LNA

Use Scenario: Final-stage PA in 802.11b/g/n access point RF modules operating at 2.412–2.472 GHz.

IC Role / Device Role / Timing Role: Medium-output-power RF transistor delivering +20 dBm saturated output with OIP3 = 27 dBm.

Use Value: Enables 10% EVM-compliant 64-QAM transmission while maintaining 1.2 dB NF for receive-path co-location.

Use Scenario: First-stage low-noise amplifier in 2.4 GHz ISM band sensor transceivers (e.g., Zigbee, Bluetooth LE).

IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter LNA with Γ_opt-matched input network.

Use Value: Achieves system NF < 2.0 dB with Ga = 12 dB, extending receiver range by ≥3 dB over standard SiGe alternatives.

UWB Pulse Amplifier

5G NR Sub-6 GHz Driver

Use Scenario: Pulse-amplifying stage in ultra-wideband (UWB) ranging modules covering 3.1–4.8 GHz.

IC Role / Device Role / Timing Role: High-linearity RF transistor biased for Class A operation with 100 mA I_C quiescent current.

Use Value: Delivers flat |S₂₁| response ±1.5 dB across 1.7 GHz bandwidth, preserving pulse fidelity for TOF accuracy.

Use Scenario: Driver amplifier in 3.5 GHz 5G NR base station small-cell front-ends.

IC Role / Device Role / Timing Role: Medium-gain, low-distortion transistor providing 14 dB MAG before final GaN PA stage.

Use Value: Supports 100 MHz signal bandwidth with OIP3 = 27 dBm, enabling 256-QAM modulation without adjacent channel leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NE85633	f_T = 12 GHz, NF = 1.4 dB TYP. @ 2 GHz, V_CEO = 12 V, SOT-343 package	Higher breakdown voltage but lower f_T and gain; requires different bias network due to 5-pin configuration	Preferred when higher supply headroom (>5 V) is needed; not drop-in due to pin count and footprint mismatch
BFP640	f_T = 45 GHz, NF = 0.8 dB TYP. @ 2 GHz, V_CEO = 4.5 V, SOT-343 package	Superior noise and bandwidth but tighter bias sensitivity and higher cost; requires precision gate-bias circuitry	Selected for ultra-low-noise receivers where 0.4 dB NF improvement justifies added design complexity and cost

Compared with NE85633 and BFP640, the 2SC5509-T2-A offers balanced trade-offs: sufficient f_T margin for 2 GHz, proven thermal reliability in M04 packaging, and cost-effective manufacturability-making it optimal for volume consumer RF modules where 1.2 dB NF and 14 dB MAG meet spec without over-engineering.

Availability

2SC5509-T2-A is available at Aetrix Electronics and suitable for Wi-Fi 2.4 GHz power amplifiers, ISM band receiver LNAs, and 5G NR sub-6 GHz driver stages requiring stable component supply, Pb-free compliance, and tape-and-reel logistics.

Supply support for 2SC5509-T2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and RF solutions for industrial, automotive, and communications markets.

The 2SC5509-T2-A belongs to Renesas' legacy RF transistor product line, engineered specifically for high-volume 2.4 GHz wireless infrastructure and consumer connectivity devices demanding low noise, medium power, and thermal reliability in compact SMT packages.

FAQ

What is the maximum collector-emitter voltage rating for the 2SC5509-T2-A?

The 2SC5509-T2-A has a maximum collector-emitter voltage (V_CEO) rating of 3.3 V at T_C = 25°C. This rating defines the absolute upper limit for DC bias voltage applied between collector and emitter terminals. Exceeding this value risks avalanche breakdown and permanent device failure. Designers must ensure operating V_CE remains ≤3.3 V under all conditions-including transient spikes-and derate for elevated temperatures using the specified thermal resistance values.

Does the 2SC5509-T2-A support 2.4 GHz Wi-Fi applications?

Yes, the 2SC5509-T2-A is explicitly characterized for 2.4 GHz operation, with NF = 1.2 dB TYP., MAG = 14 dB TYP., and OIP3 = 27 dBm all specified at f = 2 GHz. Its f_T = 25 GHz provides ample bandwidth margin, and its M04 package supports controlled-impedance PCB layouts required for 2.4 GHz Wi-Fi 802.11n/g PA and LNA stages. Application notes and S-parameter files for 2.4 GHz matching networks are available on Renesas' website.

How many emitter terminals does the 2SC5509-T2-A have, and why?

The 2SC5509-T2-A has two emitter terminals (Pins 1 and 3), both internally connected to the same emitter region. This dual-emitter configuration improves thermal symmetry and current distribution in the flat-lead M04 package, enhancing power-handling consistency and reducing localized heating during RF operation. It also allows flexible PCB layout-such as symmetric grounding or Kelvin sensing-without altering internal device physics.

What is the thermal resistance from junction to case (R_{th j-c}) for the 2SC5509-T2-A?

The 2SC5509-T2-A has a junction-to-case thermal resistance (R_{th j-c}) of 95 °C/W, measured under standard test conditions. This value reflects heat conduction efficiency from the silicon die to the package's thermal pad (Pin 2/Collector leadframe). When mounted on a 15 × 15 mm ceramic substrate, this enables sustained operation at T_j = 150°C with P_tot ≈ 190 mW, making it suitable for thermally constrained RF modules without additional heatsinks.

Is the 2SC5509-T2-A pin-compatible with other Renesas RF transistors in M04 packages?

No, the 2SC5509-T2-A is not universally pin-compatible with other Renesas M04-packaged RF transistors. While the M04 outline is standardized, pin functions vary: the 2SC5509-T2-A uses Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Base. Other devices like the 2SC5004 use different assignments (e.g., Pin 1 = Base). Always verify pinout per datasheet-never assume compatibility-even within the same package family.

2SC5509-T2-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-82A, SOT-343

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 3.3V

Frequency - Transition:: 15GHz

Noise Figure (dB Typ @ f):: 1.2dB @ 2GHz

Gain:: 14dB

Power - Max:: 190mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 10mA, 2V

Current - Collector (Ic) (Max):: 100mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-343

2SC5509-T2-A FAQ

1.How can I place an order for 2SC5509-T2-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC5509-T2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC5509-T2-A reliable?

The price and inventory of 2SC5509-T2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5509-T2-A is usually 5 days.

3.What payment methods are accepted for 2SC5509-T2-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5509-T2-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC5509-T2-A?

2SC5509-T2-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC5509-T2-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC5509-T2-A?

For technical support, including 2SC5509-T2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5509-T2-A requirements.

6.How does Aetrix verify that 2SC5509-T2-A is sourced from the original manufacturer or authorized distributors?

All 2SC5509-T2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5509-T2-A meets industry standards.

7.What is the process for return or replacement of 2SC5509-T2-A?

All 2SC5509-T2-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5509-T2-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC5509-T2-A part is unused and in its original packaging.

Return procedure for 2SC5509-T2-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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