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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFS483H6327XTSA1

Name: BFS483H6327XTSA1
Brand: Infineon Technologies
SKU: BFS483H6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFS483H6327XTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: 6-VSSOP, SC-88, SOT-363

Datasheet:: BFS483H6327XTSA1.pdf

Description:: RF TRANS 2 NPN 12V 8GHZ SOT363-6

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Product details

Overview

BFS483H6327XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor pair in a single SOT363 package, configured as two galvanically isolated NPN transistors for broadband amplifier stages. It delivers f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and h_FE = 70–140 at I_C = 15 mA, V_CE = 8 V, targeting front-end LNA designs in GSM/UMTS infrastructure and portable radio receivers.

For engineers reviewing the BFS483H6327XTSA1 datasheet, BFS483H6327XTSA1 pinout, BFS483H6327XTSA1 application, or BFS483H6327XTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz and 1.8 GHz, dual-transistor isolation integrity, SOT363 thermal resistance (R_thJS = 245 K/W), and AEC-Q101 qualification status per report EHA07196.

Technical Context

The BFS483H6327XTSA1 integrates two independent NPN RF transistors sharing only mechanical packaging-no internal electrical connection-enabling differential or cascaded gain stages without cross-talk. Its f_T ≥ 6 GHz (typ. 8 GHz) and C_cb = 0.34 pF (typ.) support stable 900 MHz to 1.8 GHz operation with minimal parasitic loading.

Designed for low-noise amplification under DC bias conditions of I_C = 2–30 mA and V_CE = 8 V, it achieves NF_min = 0.9 dB at 900 MHz with Z_S = Z_Sopt, and delivers G_ms = 19 dB (900 MHz) and |S₂₁e|² = 15.5 dB (900 MHz, 50 Ω system), confirming suitability for impedance-matched RF signal chains.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz typical - enables stable small-signal gain up to UHF band
NF_min	0.9 dB at 900 MHz - defines lowest achievable noise floor in LNA input stage
h_FE	70–140 at I_C = 15 mA - ensures predictable DC bias stability across production lots
V_CEO	12 V - sets maximum safe collector-emitter voltage swing in common-emitter configuration
C_cb	0.34 pF typical - limits Miller effect and high-frequency phase shift in amplifier feedback paths
R_thJS	245 K/W - determines junction-to-solder-point thermal rise under 450 mW P_tot at T_S ≤ 40 °C
AEC-Q101	Qualified per report EHA07196 - validates reliability for automotive RF modules requiring extended temperature operation

Pinout & Package

Package: SOT363 - surface-mount, 6-pin, leaded plastic package with visible leads; RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1 (B1)	Base of Transistor 1	DC bias and RF input control node for first NPN device
2 (E1)	Emitter of Transistor 1	AC ground reference or emitter degeneration point for TR1
3 (C1)	Collector of Transistor 1	RF output or active load node for TR1; connected to matching network
4 (B2)	Base of Transistor 2	Independent bias/control node for second isolated NPN device
5 (E2)	Emitter of Transistor 2	Separate emitter path enabling differential pair or cascode configuration
6 (C2)	Collector of Transistor 2	Second RF output node; no internal connection to C1 ensures galvanic isolation

Key Features

Feature	Design Value
Dual isolated NPN transistors	Enables differential LNA, cascode, or redundant gain stages without inter-device coupling
NF_min = 0.9 dB @ 900 MHz	Meets stringent sensitivity requirements for cellular base station receiver front-ends
f_T ≥ 6 GHz (typ. 8 GHz)	Supports stable 1.8 GHz operation with margin for process variation and layout parasitics
SOT363 with visible leads	Facilitates optical solder-joint inspection and rework in automated SMT lines
AEC-Q101 qualified	Validates robustness for automotive telematics and V2X RF modules operating from −40 °C to +125 °C ambient

Applications

GSM/UMTS Base Station LNA

Portable Radio Receiver Front-End

Use Scenario: Low-noise amplification of 900 MHz receive signals in macrocell BTS transceivers with tight adjacent-channel rejection requirements.

IC Role / Device Role / Timing Role: First-stage NPN RF transistor pair providing 19 dB maximum stable gain and 0.9 dB noise figure under matched 50 Ω source impedance.

Use Value: Enables >15 dB SNR improvement over single-transistor LNAs while maintaining thermal dissipation within 450 mW limit at TS ≤ 40 °C.

Use Scenario: Compact dual-transistor LNA in handheld DMR or TETRA radios where PCB space and ESD robustness are critical.

IC Role / Device Role / Timing Role: Galvanically isolated TR1/TR2 used in cascode configuration to improve reverse isolation and reduce Miller capacitance effects.

Use Value: Achieves 15.5 dB transducer gain at 900 MHz with C_cb = 0.34 pF, reducing need for external neutralization components.

Automotive V2X 5.9 GHz DSRC Pre-Amp

ISM Band 2.4 GHz Wireless Sensor Node LNA

Use Scenario: Receive-path amplification in AEC-Q101-compliant vehicle-to-everything modules operating at 5.9 GHz carrier with pulsed duty cycle.

IC Role / Device Role / Timing Role: Dual-transistor pair biased at I_C = 10 mA to extend usable bandwidth beyond 1.8 GHz while meeting automotive thermal cycling requirements.

Use Value: Leverages R_thJS = 245 K/W and qualification per EHA07196 to sustain operation at T_J ≤ 150 °C during burst-mode transmission.

Use Scenario: Battery-powered industrial sensor nodes requiring ultra-low-noise amplification of weak 2.4 GHz Zigbee/Bluetooth LE signals.

IC Role / Device Role / Timing Role: Single-transistor use (TR1) with I_C = 5 mA bias to minimize quiescent current while achieving NF_min = 1.4 dB at 1.8 GHz.

Use Value: Delivers 12.5 dB maximum available gain at 1.8 GHz, enabling reliable link budget margin with sub-10 µA sleep-mode leakage (I_ES ≤ 100 nA).

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640FH6327XTSA1	f_T = 25 GHz, NF_min = 0.75 dB @ 1.8 GHz, single transistor in SOT343	Lacks dual-transistor isolation; higher frequency capability but no galvanic separation	Select when single-device 2.4 GHz+ LNA performance outweighs need for differential/cascode topology
MMDT2222A	h_FE = 100–300, f_T = 300 MHz, NF_min ≈ 4 dB @ 100 MHz, dual NPN in SOT363	Not RF-optimized; unsuitable above 500 MHz due to low f_T and higher noise	Acceptable only for sub-300 MHz IF amplifiers where cost is prioritized over noise and bandwidth

Compared with BFP640FH6327XTSA1, BFS483H6327XTSA1 trades 17 GHz f_T margin for dual-isolation architecture and proven 900 MHz/1.8 GHz noise performance; versus MMDT2222A, it delivers 3.1 dB lower NF and 26× higher f_T, making it the sole viable option for cellular-band RF front-ends.

Availability

BFS483H6327XTSA1 is available at Aetrix Electronics and suitable for GSM/UMTS base station LNAs, automotive V2X pre-amplifiers, and ISM-band wireless sensor nodes requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BFS483H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

The BFS483 belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in cellular, automotive, and industrial wireless infrastructure applications up to 2 GHz.

FAQ

What is the maximum DC collector current rating for BFS483H6327XTSA1?

The absolute maximum DC collector current is 65 mA per transistor, as specified in the "Maximum Ratings" table. Operation above 30 mA is not recommended for low-noise amplifier applications due to degradation in NF_min and increased thermal stress on the SOT363 package.

Does BFS483H6327XTSA1 require external biasing components for stable RF operation?

Yes - each transistor requires individual DC bias networks (base resistor divider, emitter degeneration resistor, collector decoupling capacitor) to set I_C = 5–15 mA and V_CE = 8 V. The dual structure does not share bias nodes; TR1 and TR2 must be independently stabilized to prevent thermal runaway.

Is BFS483H6327XTSA1 suitable for 5G sub-6 GHz applications?

No - its f_T = 8 GHz and verified AC characteristics (e.g., G_ma = 12.5 dB at 1.8 GHz) do not support stable gain or noise performance above 2.5 GHz. For 3.5 GHz or 4.9 GHz 5G FR1 bands, higher-f_T alternatives like BFP640FH6327XTSA1 are required.

How is ESD protection implemented in BFS483H6327XTSA1?

The device itself has no integrated ESD protection diodes; it is classified as ESD-sensitive (Class 1C per JEDEC JS-001). Safe handling requires grounded workstations, ionized air, and static-dissipative packaging. External TVS diodes or RC filters must be added at RF input/output ports in final design.

BFS483H6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 6-VSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Gain:: 19dB

Power - Max:: 450mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 15mA, 8V

Current - Collector (Ic) (Max):: 65mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT363-PO

BFS483H6327XTSA1 FAQ

1.How can I place an order for BFS483H6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFS483H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFS483H6327XTSA1 reliable?

The price and inventory of BFS483H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFS483H6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BFS483H6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFS483H6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFS483H6327XTSA1?

BFS483H6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFS483H6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFS483H6327XTSA1?

For technical support, including BFS483H6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFS483H6327XTSA1 requirements.

6.How does Aetrix verify that BFS483H6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BFS483H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFS483H6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BFS483H6327XTSA1?

All BFS483H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFS483H6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFS483H6327XTSA1 part is unused and in its original packaging.

Return procedure for BFS483H6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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