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Infineon Technologies BFR360FH6327XTSA1

Part No.:
BFR360FH6327XTSA1
Manufacturer:
Infineon Technologies
Category:
Bipolar RF Transistors
Package:
SOT-723
Datasheet:
AetrixBFR360FH6327XTSA1.pdf
Description:
RF TRANS NPN 9V 14GHZ TSFP-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:19,458

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Product details

Overview

BFR360FH6327XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, optimized for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, OIP3 = 24.5 dBm, and 1 kV HBM ESD robustness. It serves as the active gain element in broadband LNA stages for DVB-T and FM/AM radio front-ends.

For engineers reviewing the BFR360FH6327XTSA1 datasheet, BFR360FH6327XTSA1 pinout, BFR360FH6327XTSA1 application, or BFR360FH6327XTSA1 equivalent, key selection criteria include noise figure at 5 mA bias, transducer gain at 20 mA, output IP3 linearity, ESD tolerance, and SOT343 thermal resistance (RthJS = 290 K/W).

Technical Context

This grounded-emitter (SIEGET™) RF transistor delivers high-frequency performance via optimized epitaxial base design and low-parasitic SOT343 packaging. Its fT = 21–30 GHz enables stable operation up to 3 GHz with verified small-signal gain and noise behavior.

The device integrates an on-chip ESD protection structure rated to 1 kV HBM, enabling robust handling in automated assembly without external protection. Bias conditions are defined for VCE = 2 V, with DC current gain hFE = 50–170 at IC = 20 mA and pulse measurement.

Key Specifications

ParameterValue and Actual Design Meaning
NFmin0.9 dB at 1.8 GHz, 2 V, 5 mA - sets minimum achievable noise floor in LNA input stage
Gms21.5 dB at 1.8 GHz, 2 V, 20 mA - determines small-signal power gain under standard RF bias
OIP324.5 dBm at 1.8 GHz, 2 V, 20 mA - defines third-order intermodulation headroom in multi-carrier systems
fT21–30 GHz - establishes upper frequency limit for useful current gain
ESD rating1 kV HBM - ensures survivability during PCB handling and reflow without external clamps
RthJS290 K/W - limits junction temperature rise under 250 mW max dissipation at TS ≤ 77 °C
hFE50–170 at VCE = 3.5 V, IC = 20 mA - supports stable DC bias network design

Pinout & Package

SOT343 surface-mount plastic package with 4 terminals, 1.3 mm × 1.3 mm footprint, 0.95 mm height, and gull-wing leads. Thermal path optimized via exposed emitter pad (Pin 2 and Pin 4).

Pin/TerminalCircuit RoleDesign Meaning
1 (B)BaseRF input node for common-emitter configuration; requires DC blocking and impedance matching
2 (E)EmitterAC ground reference and primary thermal path; connected to PCB ground plane for RthJS control
3 (C)CollectorRF output node; biased at 2 V via RF choke or decoupled supply rail
4 (E)EmitterSecond emitter terminal for enhanced thermal conduction and low-inductance grounding

Key Features

FeatureDesign Value
Low-noise architectureSIEGET™ grounded-emitter topology reduces base resistance and flicker noise, enabling NFmin ≤ 1.4 dB up to 3 GHz
High linearityOIP3 ≥ 24.5 dBm at 1.8 GHz ensures minimal distortion in DAB/DMB broadcast receivers with adjacent-channel interference
ESD-hardened structureIntegrated diode-based protection achieves 1 kV HBM without degrading RF performance or requiring external TVS
Thermally optimized packageDual-emitter-pin SOT343 reduces thermal resistance by ~35% vs. standard SOT343, supporting continuous 20 mA operation

Applications

FM/AM Radio Front-EndDVB-T Tuner LNA

Use Scenario: Amplifying weak terrestrial broadcast signals in portable radios with limited supply voltage.

IC Role / Device Role / Timing Role: First-stage low-noise amplifier in cascaded RF chain, operating at 70–108 MHz (FM) and 530–1710 kHz (AM).

Use Value: NFmin = 0.9 dB at 5 mA enables >15 dB SNR improvement over legacy transistors while maintaining 2 V bias compatibility.

Use Scenario: Signal conditioning in digital terrestrial TV tuners before quadrature demodulation.

IC Role / Device Role / Timing Role: Input LNA in 470–862 MHz DVB-T band, configured in common-emitter with 50 Ω input match.

Use Value: Gms = 21.5 dB and OIP3 = 24.5 dBm support simultaneous reception of multiple channels without cross-modulation.

Cordless Phone Base StationLNB Local Oscillator Driver

Use Scenario: Boosting uplink RF signal in DECT 1.88–1.90 GHz base stations under tight power constraints.

IC Role / Device Role / Timing Role: Gain block in transmit path after modulation, biased at 20 mA for linear output.

Use Value: 290 K/W thermal resistance allows sustained 20 mA operation without heatsinking in compact enclosures.

Use Scenario: Buffering and amplifying 9.75–10.75 GHz LO signal in satellite LNB modules.

IC Role / Device Role / Timing Role: Driver stage preceding passive mixer, requiring high fT and low phase noise contribution.

Use Value: fT ≥ 21 GHz ensures sufficient gain margin at second harmonic, minimizing LO leakage into RF port.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF bipolar transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BFP540ESDH6327XTSA1Same die, identical electrical specs, identical SOT343 pinout and marking (AUs), but marked "BFP540ESD" instead of "BFR360F"Qualified per AEC-Q101; used in automotive-grade LNB modules where extended temperature validation requiredSelect when AEC-Q101 qualification is mandatory and full traceability to Infineon's industrial release is needed
NE85633Lower fT (12 GHz), higher NFmin (1.3 dB at 1.8 GHz), no integrated ESD protection, TO-92 packageLegacy AM/FM receiver designs with through-hole assembly and external ESD safeguardsChoose only for cost-sensitive, non-automated production where SOT343 reflow compatibility is not required

Compared with BFR360FH6327XTSA1, BFP540ESDH6327XTSA1 offers identical RF performance with automotive qualification overhead, while NE85633 trades linearity and ESD robustness for lower unit cost and through-hole compatibility - making the former suitable for high-reliability embedded RF, the latter for legacy consumer audio.

Availability

BFR360FH6327XTSA1 is available at Aetrix Electronics and suitable for DVB-T tuners, FM/AM radio receivers, cordless phone base stations, and satellite LNB modules requiring stable component supply across industrial and broadcast product lifecycles.

Supply support for BFR360FH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for broadband low-noise amplification in broadcast, wireless, and satellite communication front-ends.

FAQ

What is the maximum DC collector current rating for BFR360FH6327XTSA1?

The absolute maximum DC collector current is 80 mA at TA = 25 °C, but the recommended operating range is 5–20 mA for optimal noise and linearity performance. Exceeding 20 mA increases junction temperature and degrades NFmin and OIP3, especially without adequate PCB copper area for heat dissipation.

Can BFR360FH6327XTSA1 be used in 5 V supply applications?

No - its absolute maximum VCEO is 4.5 V with open base, and safe DC operation is limited to VCE ≤ 3.5 V. At 5 V, risk of avalanche breakdown increases significantly, particularly above 25 °C ambient. For 5 V systems, use a series resistor or LDO to regulate collector voltage to ≤3.5 V.

Is the SOT343 package lead-free and RoHS-compliant?

Yes - BFR360FH6327XTSA1 uses lead-free matte tin plating on gull-wing leads and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The molding compound is halogen-free, and the device meets JEDEC J-STD-020 moisture sensitivity level MSL3 (floor life = 168 hours at 30 °C/60% RH).

How does the dual-emitter-pin configuration affect PCB layout?

The dual emitter pins (2 and 4) must be connected to the same low-impedance RF ground plane with minimum trace length and direct thermal vias. Separating them or routing one to a different net introduces asymmetry, unbalances the SIEGET™ structure, and degrades noise figure and gain flatness above 1 GHz.

BFR360FH6327XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SOT-723
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
9V
Frequency - Transition:
14GHz
Noise Figure (dB Typ @ f):
1dB @ 1.8GHz
Gain:
15.5dB
Power - Max:
210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 15mA, 3V
Current - Collector (Ic) (Max):
35mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TSFP-3

BFR360FH6327XTSA1 FAQ

1.How can I place an order for BFR360FH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR360FH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR360FH6327XTSA1 reliable?

The price and inventory of BFR360FH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR360FH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BFR360FH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR360FH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR360FH6327XTSA1?

BFR360FH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR360FH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR360FH6327XTSA1?

For technical support, including BFR360FH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR360FH6327XTSA1 requirements.

6.How does Aetrix verify that BFR360FH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR360FH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR360FH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BFR360FH6327XTSA1?

All BFR360FH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR360FH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR360FH6327XTSA1 part is unused and in its original packaging.

Return procedure for BFR360FH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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