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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR92PE6327HTSA1

Name: BFR92PE6327HTSA1
Brand: Infineon Technologies
SKU: BFR92PE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR92PE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BFR92PE6327HTSA1.pdf

Description:: RF TRANS NPN 15V 5GHZ SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR92PE6327HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplification up to 2 GHz and fast non-saturated switching at collector currents from 0.5 mA to 20 mA. It features f_T = 5 GHz (typ), NF_min = 1.4 dB at 900 MHz, V_CEO = 15 V, and is housed in an RoHS-compliant SOT23 package - commonly deployed in GSM/EDGE front-end LNAs and RF switch drivers.

For engineers reviewing the BFR92PE6327HTSA1 datasheet, BFR92PE6327HTSA1 pinout, BFR92PE6327HTSA1 application, or BFR92PE6327HTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz and 1.8 GHz, transducer gain under 50 Ω conditions, thermal resistance R_thJS = 205 K/W, and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This NPN bipolar RF transistor operates with DC current gain h_FE of 70–140 at I_C = 15 mA and V_CE = 8 V, supporting stable small-signal amplification across cellular bands. Its C_cb = 0.39 pF (typ) and C_eb = 0.64 pF (typ) enable predictable impedance matching in 50 Ω architectures.

The device delivers G_ma = 16 dB (900 MHz) and |S₂₁|² = 13 dB under matched conditions, while maintaining low leakage: I_CES ≤ 10 µA and I_CBO ≤ 100 nA. Thermal derating follows a defined P_tot(T_S) curve, with full 280 mW dissipation only at T_S ≤ 93 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	5 GHz typical - enables stable gain and phase response up to 2 GHz operating band
NF_min	1.4 dB at 900 MHz - meets low-noise requirement for cellular LNA stages
V_CEO	15 V - supports operation in 12 V bias rails with margin against transient overvoltage
I_C max	45 mA - allows headroom for pulsed switching and peak current handling
R_thJS	205 K/W - defines thermal path from junction to PCB solder point; requires thermal pad layout planning
C_cb	0.39 pF typical - limits Miller effect in common-emitter configurations
h_FE	100 typical at 15 mA - ensures consistent base drive requirements across production lots

Pinout & Package

Package: SOT23 - surface-mount, 3-pin plastic package with standard footprint and lead pitch of 0.95 mm; RoHS-compliant, Pb-free terminations.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	DC bias and RF input node; requires external DC blocking and matching network
2 (E)	Emitter	Common reference terminal; typically grounded via low-inductance path for RF stability
3 (C)	Collector	RF output and power delivery node; connects to supply through RF choke or bias network

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, HTRB, and ESD testing per stress test plan
Low minimum noise figure	NF_min = 1.4 dB at 900 MHz enables high SNR in receiver front-ends without cascaded LNA stages
High transition frequency	f_T = 5 GHz typical supports wideband design margin for 2G/3G/4G LTE bands
Controlled capacitance profile	C_cb, C_eb, and C_ce tightly specified to simplify impedance matching and reduce simulation uncertainty
Thermal derating curve	P_tot vs. T_S graph provided - enables accurate power budgeting in compact PCB layouts

Applications

GSM/EDGE LNA Stage

ISM Band Transmitter Driver

Use Scenario: Low-noise amplification of 880–960 MHz receive signals in mobile handsets and IoT modems.

IC Role / Device Role / Timing Role: Primary NPN RF transistor in common-emitter configuration, biased at I_C = 2 mA, V_CE = 6 V.

Use Value: Achieves 1.4 dB NF_min and 13 dB |S₂₁|², enabling single-stage LNA design without cascading.

Use Scenario: High-linearity driver stage for 2.4 GHz ISM-band transmitters in Bluetooth LE modules.

IC Role / Device Role / Timing Role: Non-saturated switch/amplifier operating at I_C = 15 mA, V_CE = 8 V with Z_S = Z_L = 50 Ω.

Use Value: Delivers 10.5 dB G_ma at 1.8 GHz and maintains C_cb ≤ 0.55 pF for stable harmonic suppression.

Automotive Telematics RF Front-End

Portable GPS Receiver LNA

Use Scenario: AEC-Q101-compliant RF amplification in vehicle-mounted cellular/V2X communication modules.

IC Role / Device Role / Timing Role: First-stage LNA in diversity receive path, operating at 1.8 GHz with matched 50 Ω input/output.

Use Value: Qualified per AEC-Q101 and rated for T_J = 150 °C - ensures reliability in under-hood thermal environments.

Use Scenario: Low-power, battery-sensitive LNA for 1.575 GHz GPS/GNSS receivers in wearables and trackers.

IC Role / Device Role / Timing Role: NPN transistor biased at I_C = 2 mA for ultra-low quiescent current operation.

Use Value: Draws only 2 mA while delivering NF_min = 2.0 dB at 1.575 GHz - extends runtime without sacrificing sensitivity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP181E6327HTSA1	f_T = 7 GHz (typ), C_cb = 0.25 pF (typ), V_CEO = 12 V	Higher f_T supports wider bandwidth but lower breakdown voltage limits supply headroom	Select for >2 GHz designs where V_CEO ≥ 12 V suffices and lower capacitance improves matching flexibility
MMPQ3904	Quad NPN array in SOT-23-8, h_FE = 100–300, f_T = 250 MHz (max)	Not suitable for RF amplification above 500 MHz; intended for digital switching and bias networks	Use only for multi-transistor DC bias or logic-level switching - not a functional RF replacement

Compared with BFR92PE6327HTSA1, BFP181E6327HTSA1 offers higher frequency capability but reduced voltage tolerance, while MMPQ3904 serves entirely different low-frequency functions and cannot replace it in RF signal paths.

Availability

BFR92PE6327HTSA1 is available at Aetrix Electronics and suitable for GSM/EDGE LNA stages, automotive telematics RF front-ends, and portable GPS receiver designs requiring stable component supply, AEC-Q101 compliance, and verified RF performance up to 2 GHz.

Supply support for BFR92PE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BFR92P belongs to Infineon's discrete bipolar RF transistor product line, engineered specifically for high-yield, low-noise amplification and fast switching in cost-sensitive wireless infrastructure and mobile terminal applications.

FAQ

Is BFR92PE6327HTSA1 pin-compatible with BFR92P without suffix?

Yes - the E6327HTSA1 suffix denotes tape-and-reel packaging and halogen-free compliance per Infineon's standard ordering code convention; electrical characteristics, pinout (B-E-C), and SOT23 footprint are identical to baseline BFR92P.

What is the recommended bias network for 900 MHz LNA use?

For optimal NF_min at 900 MHz, bias at I_C = 2 mA and V_CE = 6 V using a 10 kΩ base resistor and emitter degeneration with 10 Ω; input matching requires a shunt inductor and series capacitor to transform 50 Ω to Z_Sopt ≈ 15 + j12 Ω.

Does this part require special ESD handling during assembly?

Yes - BFR92PE6327HTSA1 is classified as ESD-sensitive (HBM Class 1B per JESD22-A114). Use grounded workstations, ionized air, and wrist straps; avoid contact with pins prior to soldering, and store in conductive foam or shielding bags.

Can it operate reliably at 2.4 GHz ISM band?

No - while f_T = 5 GHz supports theoretical gain at 2.4 GHz, measured G_ma drops to <4 dB and |S₂₁|² falls below 3 dB at that frequency; it is characterized and validated only up to 2 GHz per datasheet AC specifications.

BFR92PE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 5GHz

Noise Figure (dB Typ @ f):: 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Gain:: 10.5dB ~ 16dB

Power - Max:: 280mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 15mA, 8V

Current - Collector (Ic) (Max):: 45mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BFR92PE6327HTSA1 FAQ

1.How can I place an order for BFR92PE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR92PE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR92PE6327HTSA1 reliable?

The price and inventory of BFR92PE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR92PE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BFR92PE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR92PE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR92PE6327HTSA1?

BFR92PE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR92PE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR92PE6327HTSA1?

For technical support, including BFR92PE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR92PE6327HTSA1 requirements.

6.How does Aetrix verify that BFR92PE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR92PE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR92PE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BFR92PE6327HTSA1?

All BFR92PE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR92PE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR92PE6327HTSA1 part is unused and in its original packaging.

Return procedure for BFR92PE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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