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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR193FH6327XTSA1

Name: BFR193FH6327XTSA1
Brand: Infineon Technologies
SKU: BFR193FH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR193FH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SOT-723

Datasheet:: BFR193FH6327XTSA1.pdf

Description:: RF TRANS NPN 12V 8GHZ TSFP-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR193FH6327XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor designed for high-gain, broadband amplification up to 2 GHz. It delivers f_T = 8 GHz, NF_min = 1 dB at 900 MHz, and P-1dB = 14.5 dBm at 900 MHz, with TSFP-3 package and pinout B-E-C. It is used in cellular front-end LNA stages for GSM/UMTS handsets.

For engineers reviewing the BFR193FH6327XTSA1 datasheet, BFR193FH6327XTSA1 pinout, BFR193FH6327XTSA1 application, or BFR193FH6327XTSA1 equivalent, key selection criteria include noise figure at 900 MHz, transducer gain at 1.8 GHz, third-order intercept point (IP3), thermal resistance (R_thJS = 135 K/W), and AEC-Q101 qualification status.

Technical Context

This NPN RF transistor operates in common-emitter configuration with DC current gain (h_FE) of 70–140 at I_C = 30 mA and V_CE = 8 V. Its small-signal S-parameter behavior supports stable gain up to 1.8 GHz, with |S₂₁|² = 14.5 dB at 900 MHz and 8.5 dB at 1.8 GHz under 50 Ω terminations.

The device features low parasitic capacitances: C_cb = 0.63 pF typ., C_ce = 0.25 pF typ., and C_eb = 2.25 pF typ. at specified bias and frequency conditions, enabling wideband matching and minimal phase distortion in LNA designs.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz typical - enables stable amplification beyond 1.8 GHz cellular bands
NF_min	1 dB at 900 MHz - critical for receiver sensitivity in GSM/EDGE basebands
P-1dB	14.5 dBm at 900 MHz - defines usable linear output power before compression
IP3	29 dBm at 900 MHz - determines intermodulation rejection in multi-carrier environments
R_thJS	135 K/W - sets thermal derating slope above 72°C soldering-point temperature
V_CEO	12 V - maximum safe collector-emitter voltage under operating bias
I_C max	80 mA - limits DC bias current for reliability and thermal management

Pinout & Package

Package: TSFP-3 (Thin Small Flat Package, 3-pin, leadless, surface-mount). Dimensions per Infineon standard outline: 1.6 mm × 0.8 mm × 0.55 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Marked "B")	Base	DC bias and RF input node; requires impedance-matched network for optimal noise performance
2 (Marked "E")	Emitter	AC ground reference and current return path; connected directly to RF ground plane
3 (Marked "C")	Collector	RF output and DC supply node; thermally coupled to PCB via exposed pad (soldering point)

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling and HTRB
RoHS & halogen-free	Complies with EU Directive 2011/65/EU and IEC 61249-2-21:2013
Low C_cb / C_ce	0.63 pF / 0.25 pF typ. - minimizes Miller effect and improves stability at UHF
G_ms = 12.5 dB	Maximum stable gain at 900 MHz - enables unconditional stability without external stabilization
ESD sensitive (HBM Class 2)	Withstands ≥2 kV HBM - requires grounded workstation and ionized air handling

Applications

GSM/EDGE Handset LNA

UMTS Band I Front-End

Use Scenario: Low-noise amplification of 880–915 MHz receive signals in dual-band mobile handsets.

IC Role / Device Role / Timing Role: First-stage NPN RF transistor in cascode LNA topology with emitter degeneration.

Use Value: 1 dB NF_min preserves receiver sensitivity; 14.5 dBm P-1dB supports dynamic range in crowded urban RF environments.

Use Scenario: High-linearity amplification of 1920–1980 MHz uplink signals in 3G smartphones.

IC Role / Device Role / Timing Role: Driver amplifier in two-stage front-end, biased at I_C = 30 mA, V_CE = 8 V.

Use Value: 29 dBm IP3 ensures adjacent-channel interference suppression; G_ma = 19 dB enables sufficient gain margin before mixer stage.

ISM Band 915 MHz Receiver

Wireless Metering Transceiver

Use Scenario: Receive-path amplification in sub-GHz IoT nodes operating in FCC Part 15.249 band.

IC Role / Device Role / Timing Role: Single-transistor LNA with microstrip matching network on FR4 PCB.

Use Value: R_thJS = 135 K/W allows operation at 85°C ambient without heatsink; TSFP-3 footprint saves board space in compact modules.

Use Scenario: Bidirectional RF front-end in AMR (Automatic Meter Reading) systems using FSK modulation.

IC Role / Device Role / Timing Role: Shared LNA/PA driver in half-duplex transceiver architecture.

Use Value: f_T = 8 GHz provides headroom for harmonic filtering; AEC-Q101 qualification ensures field longevity in outdoor utility installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR92A	f_T = 7 GHz, NF_min = 1.2 dB at 900 MHz, P-1dB = 13.5 dBm	Lower gain and linearity; suited for cost-sensitive consumer receivers	Select when 1 dB NF margin is acceptable and IP3 > 27 dBm suffices
MRF581	f_T = 9 GHz, NF_min = 1.3 dB at 900 MHz, C_cb = 0.85 pF	Higher f_T but larger C_cb; requires tighter layout control for stability	Prefer for 2.1 GHz LTE bands where f_T headroom matters more than minimum noise

Compared with BFR193FH6327XTSA1, BFR92A trades 0.2 dB NF and 1 dB P-1dB for lower cost and wider availability, while MRF581 extends usable bandwidth but increases layout sensitivity due to higher C_cb - making BFR193F optimal for balanced 900 MHz/1.8 GHz dual-band LNAs.

Availability

BFR193FH6327XTSA1 is available at Aetrix Electronics and suitable for GSM handset design, UMTS front-end development, and ISM-band wireless metering requiring stable component supply across production ramps.

Supply support for BFR193FH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, headquartered in Munich.

The BFR193F belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-performance, low-noise amplification in cellular and industrial wireless infrastructure up to 2 GHz.

FAQ

What is the recommended bias condition for minimum noise figure?

The datasheet specifies NF_min = 1 dB at I_C = 10 mA, V_CE = 8 V, and Z_S = Z_Sopt. Optimal source impedance is 11 + j12 Ω at 900 MHz. Achieving this requires a lossless matching network between antenna filter and base terminal; emitter degeneration inductance must be minimized to preserve noise performance.

Is BFR193FH6327XTSA1 suitable for 5G sub-6 GHz applications?

No - its f_T = 8 GHz and verified AC characteristics extend only to 2 GHz. At 3.5 GHz, gain drops below 6 dB and noise figure exceeds 2.5 dB. For n78 band (3.3–3.8 GHz), Infineon's BFP740F or BFP840F are specified alternatives with f_T > 25 GHz and validated S-parameters up to 6 GHz.

How does the TSFP-3 package affect thermal performance in high-density layouts?

The TSFP-3 exposes the collector die attach pad on the bottom surface, enabling direct thermal conduction to inner copper layers. With 2 cm² of 2-oz copper pour beneath the pad, junction-to-ambient thermal resistance drops to ~110 K/W - allowing continuous 80 mA operation at 70°C ambient if PCB layout follows Infineon AN077 guidelines.

Does AEC-Q101 qualification cover all parametric limits in the datasheet?

AEC-Q101 testing validates reliability (HTGB, TC, HTRB, etc.) but does not re-test every electrical parameter. The qualification report confirms that all stress-tested units met datasheet limits for V_CEO, h_FE, NF_min, and f_T after 1000 hours HTGB at 150°C, confirming robustness for automotive under-hood temperature profiles.

BFR193FH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SOT-723

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Gain:: 12.5dB

Power - Max:: 580mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 30mA, 8V

Current - Collector (Ic) (Max):: 80mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSFP-3

BFR193FH6327XTSA1 FAQ

1.How can I place an order for BFR193FH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR193FH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR193FH6327XTSA1 reliable?

The price and inventory of BFR193FH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR193FH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BFR193FH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR193FH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR193FH6327XTSA1?

BFR193FH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR193FH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR193FH6327XTSA1?

For technical support, including BFR193FH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR193FH6327XTSA1 requirements.

6.How does Aetrix verify that BFR193FH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR193FH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR193FH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BFR193FH6327XTSA1?

All BFR193FH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR193FH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR193FH6327XTSA1 part is unused and in its original packaging.

Return procedure for BFR193FH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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