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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR460L3E6327XTMA1

Name: BFR460L3E6327XTMA1
Brand: Infineon Technologies
SKU: BFR460L3E6327XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR460L3E6327XTMA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-101, SOT-883

Datasheet:: BFR460L3E6327XTMA1.pdf

Description:: RF TRANS NPN 5.8V 22GHZ TSLP-3-1

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Product details

Overview

BFR460L3E6327XTMA1 from Infineon is a low-noise NPN RF bipolar transistor in TSLP-3-1 package, designed for grounded-emitter (SIEGET™) amplifier stages. It delivers NFmin = 1.1 dB at 1.8 GHz/3 V/5 mA, fT = 22 GHz, and OIP3 = 27 dBm at 1.8 GHz/3 V/20 mA-enabling high-linearity, low-noise amplification in sub-1 GHz ISM and RKE receivers.

For engineers reviewing the BFR460L3E6327XTMA1 datasheet, BFR460L3E6327XTMA1 pinout, BFR460L3E6327XTMA1 application, or BFR460L3E6327XTMA1 equivalent, key selection criteria include noise figure vs. bias current trade-off, ESD robustness (1.5 kV HBM), transition frequency stability across IC, and TSLP-3-1 thermal resistance (RthJS = 210 K/W).

Technical Context

The BFR460L3E6327XTMA1 employs Infineon's fourth-generation SIEGET™ structure with emitter-grounded topology optimized for broadband LNA operation. Its fT of 22 GHz (typ.) and CCB of 0.28 pF (typ.) at 3 V support stable gain up to 3 GHz while minimizing Miller effect.

DC characteristics include hFE = 90–160 at VCE = 3 V/IC = 20 mA, with absolute max ratings of VCEO = 4.5 V and Ptot = 200 mW. The device is qualified per JEDEC JESD47/JESD22 and AEC-Q101 for industrial and automotive-grade reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
NFmin	1.1 dB at 1.8 GHz, 3 V, 5 mA - enables ultra-low-noise front-end amplification in battery-powered RKE receivers
fT	22 GHz (typ.) at VCE = 3 V, IC = 30 mA - supports stable gain in UHF and low-microwave bands up to 3 GHz
OIP3	27 dBm at 1.8 GHz, 3 V, 20 mA - provides strong linearity for multi-tone CATV/DVB-T signal handling
CCB	0.28 pF (typ.) at VCB = 3 V - reduces feedback capacitance for improved stability in common-emitter LNA designs
ESD HBM	1.5 kV (typ.) - meets industrial handling requirements without additional on-board protection circuitry
RthJS	210 K/W - defines thermal limit for continuous 200 mW dissipation with TS ≤ 108 °C at solder point

Pinout & Package

Package: TSLP-3-1 - ultra-thin, leadless surface-mount package (0.55 mm height) with exposed emitter pad for thermal enhancement and RF grounding.

Pin/Terminal	Circuit Role	Design Meaning
1 (Marked "B")	Base	RF input node; requires DC bias network and impedance matching for optimal noise performance
2 (Marked "E")	Emitter	Ground reference and thermal path; connected directly to PCB ground plane via exposed pad
3 (Marked "C")	Collector	RF output node; biased at 3 V with decoupling for stable transducer gain and OIP3

Key Features

Feature	Design Value
SIEGET™ grounded-emitter architecture	Enables repeatable noise matching and eliminates base inductance sensitivity in LNA layouts
Low VCEO = 4.5 V	Supports 3 V supply systems with headroom for transient voltage margin in automotive RKE modules
Gms = 16 dB at 1.8 GHz	Delivers >10 dB available gain margin over system noise floor in DAB/DMB front-ends
TSLP-3-1 footprint	0.8 × 0.6 mm outline with 0.35 mm pitch enables dense RF layout in space-constrained remote controls

Applications

Remote Keyless Entry (RKE) Receiver

CATV/DVB-T Low-Noise Amplifier

Use Scenario: 315/434 MHz receiver front-end in automotive key fobs with <10 μA standby current.

IC Role / Device Role / Timing Role: First-stage LNA providing gain and noise figure optimization before mixer stage.

Use Value: NFmin = 1.1 dB ensures >2 dB improvement in link budget vs. legacy RF transistors at same bias.

Use Scenario: 50–862 MHz broadband amplifier in set-top box tuner modules.

IC Role / Device Role / Timing Role: Single-transistor cascode LNA delivering flat gain and low distortion across full CATV band.

Use Value: OIP3 = 27 dBm maintains >60 dBc intermodulation suppression with 20-channel QAM signals.

DAB/DMB Portable Radio Front-End

Sub-1 GHz ISM Band Sensor Hub

Use Scenario: Handheld digital radio receiving 174–240 MHz DAB and 1452–1492 MHz DMB bands.

IC Role / Device Role / Timing Role: Dual-band LNA with switchable bias for dynamic power/noise optimization.

Use Value: fT = 22 GHz allows stable 16 dB gain at both DAB and DMB frequencies without neutralization.

Use Scenario: 868/915 MHz wireless sensor node with 10-year battery life requirement.

IC Role / Device Role / Timing Role: Low-power LNA operating at 5 mA bias to extend sleep-mode battery duration.

Use Value: NFmin = 1.1 dB at 5 mA preserves SNR while reducing quiescent current by 60% vs. 20 mA operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640FESD	fT = 25 GHz, NFmin = 1.0 dB at 1.8 GHz, but higher VCEO = 5.5 V and larger TSLP-6-1 package	Preferred for higher-frequency 5G NR-FDD front-ends requiring >20 GHz bandwidth	Select when system-level gain flatness above 2.5 GHz is critical and board area permits 6-pin layout
MMD1505	fT = 18 GHz, NFmin = 1.3 dB at 1.8 GHz, lower ESD rating (0.5 kV HBM), TO-92 package	Suitable for cost-sensitive consumer electronics where manual assembly and lower reliability are acceptable	Choose only for non-automotive, non-industrial prototypes with no ESD control infrastructure

Compared with BFP640FESD and MMD1505, the BFR460L3E6327XTMA1 offers best-in-class noise-performance-to-package-size ratio for sub-3 GHz ISM and broadcast receivers, with validated AEC-Q101 qualification enabling drop-in use in automotive RKE modules.

Availability

BFR460L3E6327XTMA1 is available at Aetrix Electronics and suitable for remote keyless entry (RKE), CATV/DVB-T tuners, and DAB/DMB portable radios requiring stable component supply, consistent parametric performance, and long-term lifecycle availability.

Supply support for BFR460L3E6327XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BFR460L3 belongs to Infineon's fourth-generation SIEGET™ RF bipolar transistor family, engineered specifically for high-gain, low-noise amplification in battery-powered wireless receivers operating below 3 GHz.

FAQ

What is the recommended DC bias for minimum noise figure?

For NFmin = 1.1 dB, bias the BFR460L3E6327XTMA1 at VCE = 3 V and IC = 5 mA using a stable base voltage divider or current source. The datasheet specifies this condition explicitly; increasing IC beyond 5 mA degrades NFmin due to increased thermal noise and base resistance effects.

Can this transistor be used in a common-base configuration?

Yes-the BFR460L3E6327XTMA1 supports common-base operation with verified AC characteristics at VCB = 3 V. However, its SIEGET™ structure is optimized for grounded-emitter use; common-base gain and OIP3 are not characterized in the datasheet, so design validation is required.

Is the TSLP-3-1 package compatible with standard reflow profiles?

Yes-Infineon specifies compatibility with IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and peak reflow temperature of 260 °C. The TSLP-3-1's copper leadframe and thin mold compound enable uniform heating and reliable solder joint formation under standard lead-free profiles.

Does the 1.5 kV HBM ESD rating apply to all pins?

Yes-the 1.5 kV (typ.) HBM rating applies to all three terminals (B, E, C) per JEDEC JS-001 test conditions. The device uses integrated ESD protection diodes between base-emitter and collector-emitter junctions, confirmed by Infineon's qualification report for AEC-Q101.

BFR460L3E6327XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-101, SOT-883

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 5.8V

Frequency - Transition:: 22GHz

Noise Figure (dB Typ @ f):: 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz

Gain:: 16dB

Power - Max:: 200mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 90 @ 20mA, 3V

Current - Collector (Ic) (Max):: 50mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSLP-3-1

BFR460L3E6327XTMA1 FAQ

1.How can I place an order for BFR460L3E6327XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR460L3E6327XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR460L3E6327XTMA1 reliable?

The price and inventory of BFR460L3E6327XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR460L3E6327XTMA1 is usually 5 days.

3.What payment methods are accepted for BFR460L3E6327XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR460L3E6327XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR460L3E6327XTMA1?

BFR460L3E6327XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR460L3E6327XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR460L3E6327XTMA1?

For technical support, including BFR460L3E6327XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR460L3E6327XTMA1 requirements.

6.How does Aetrix verify that BFR460L3E6327XTMA1 is sourced from the original manufacturer or authorized distributors?

All BFR460L3E6327XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR460L3E6327XTMA1 meets industry standards.

7.What is the process for return or replacement of BFR460L3E6327XTMA1?

All BFR460L3E6327XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR460L3E6327XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR460L3E6327XTMA1 part is unused and in its original packaging.

Return procedure for BFR460L3E6327XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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