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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR182WH6327XTSA1

Name: BFR182WH6327XTSA1
Brand: Infineon Technologies
SKU: BFR182WH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR182WH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-70, SOT-323

Datasheet:: BFR182WH6327XTSA1.pdf

Description:: RF TRANS NPN 12V 8GHZ SOT323-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR182WH6327XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT323 package, designed for broadband RF amplification at 900 MHz and 1.8 GHz. It delivers f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and h_FE = 70–140 (IC = 10 mA, V_CE = 8 V), targeting front-end LNA stages in GSM/EDGE baseband receivers.

For engineers reviewing the BFR182WH6327XTSA1 datasheet, BFR182WH6327XTSA1 pinout, BFR182WH6327XTSA1 application, or BFR182WH6327XTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz, maximum stable gain of 19 dB, C_cb = 0.34 pF typ., thermal resistance R_thJS = 240 K/W, and AEC-Q101 qualification status.

Technical Context

This NPN RF transistor operates with V_CEO = 12 V and I_C = 35 mA max, optimized for low-noise amplifier (LNA) design in sub-2 GHz wireless infrastructure. Its f_T = 8 GHz and C_eb = 0.8 pF typ. support wideband matching up to 1.8 GHz while maintaining stable gain (G_ms = 19 dB at 900 MHz).

The device features Z_Sopt-based noise matching, with verified ICES ≤ 30 nA at 85 °C and R_thJS = 240 K/W enabling reliable operation under pulsed RF loads. ESD sensitivity (HBM Class 2) requires strict handling per JEDEC JESD22-A114.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz typical - enables stable high-gain amplification up to 1.8 GHz
NF_min	0.9 dB at 900 MHz - meets stringent LNA noise floor requirements for GSM receivers
h_FE	70–140 at I_C = 10 mA - ensures predictable DC bias stability across production lots
C_cb	0.34 pF typical - minimizes Miller effect for improved high-frequency stability
R_thJS	240 K/W - defines thermal derating slope for PCB layout and heatsinking decisions
V_CEO	12 V - sets maximum allowable collector supply rail in single-supply LNA designs
G_ms	19 dB at 900 MHz - provides margin for cascaded gain stages without oscillation risk

Pinout & Package

Package: SOT323 - surface-mount plastic package with visible leads, RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	DC bias and RF input node; requires external DC blocking and impedance matching network
2	Emiter (E)	AC ground reference; connected to RF ground plane with minimal inductance
3	Collector (C)	RF output and power supply node; routed with controlled impedance and decoupling

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling and HTRB
Z_Sopt noise matching	Enables <0.9 dB NF at 900 MHz without complex feedback networks
Pb-free & halogen-free	Complies with EU RoHS Directive 2011/65/EU and JEDEC JS709C
Low C_ce	0.26 pF typical - reduces output loading and improves reverse isolation
High f_T/C_cb ratio	23.5 GHz/pF - supports wideband matching with reduced parasitic sensitivity

Applications

GSM Base Station Receiver

ISM Band Transceiver Front-End

Use Scenario: Low-noise amplification of 900 MHz receive signals in macrocell BTS hardware.

IC Role / Device Role / Timing Role: First-stage LNA in RF front-end chain before downconversion.

Use Value: NF_min = 0.9 dB directly improves receiver sensitivity by ≥1.2 dB over alternatives with >1.2 dB NF.

Use Scenario: Receive path amplification in 868/915 MHz ISM band IoT gateways.

IC Role / Device Role / Timing Role: Single-transistor LNA operating from 3.3 V supply with 10 mA bias.

Use Value: G_ms = 19 dB at 900 MHz enables single-stage gain sufficient to drive mixer input without added noise.

Automotive Telematics Module

Portable RFID Reader

Use Scenario: Cellular receive amplification in AEC-Q101-compliant telematics control units.

IC Role / Device Role / Timing Role: RF amplifier in LTE-FDD Band 8 (900 MHz) receive chain.

Use Value: AEC-Q101 qualification and TJ = 150 °C rating ensure functional safety compliance without derating.

Use Scenario: 13.56 MHz HF RFID reader front-end requiring broadband low-noise gain.

IC Role / Device Role / Timing Role: Wideband LNA covering 1–2 GHz for multi-standard tag interrogation.

Use Value: f_T = 8 GHz and C_eb = 0.8 pF allow stable gain extension beyond 1.5 GHz with minimal neutralization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP182W	f_T = 7 GHz (typ.), NF_min = 1.1 dB at 900 MHz, same SOT323 package	Lower gain margin and higher noise floor limit use in high-sensitivity receivers	Select when cost sensitivity outweighs 0.2 dB NF and 1 GHz f_T penalty
MRF581	Higher V_CEO = 20 V, but C_cb = 0.65 pF and no AEC-Q101 qualification	Not suitable for automotive environments; requires larger bias network due to lower h_FE	Prefer only in non-automotive industrial RF where voltage headroom >12 V is required

Compared with BFP182W and MRF581, BFR182WH6327XTSA1 uniquely combines AEC-Q101 qualification, sub-1 dB NF at 900 MHz, and 8 GHz f_T in SOT323-enabling compact, automotive-grade LNAs without trade-offs in noise or bandwidth.

Availability

BFR182WH6327XTSA1 is available at Aetrix Electronics and suitable for GSM base station receivers, automotive telematics modules, ISM band transceivers, and portable RFID readers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFR182WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with global manufacturing and R&D centers.

The BFR182W series belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in sub-2 GHz wireless infrastructure and automotive connectivity systems.

FAQ

Is BFR182WH6327XTSA1 qualified for automotive applications?

Yes. The device carries full AEC-Q101 qualification per Infineon's official qualification report, covering stress tests including HTGB, HTRB, temperature cycling, and mechanical shock. It is rated for operation from −65 °C to +150 °C junction temperature and approved for use in automotive telematics and cellular V2X modules.

What is the recommended bias condition for minimum noise figure?

For NF_min = 0.9 dB at 900 MHz, use I_C = 3 mA and V_CE = 8 V with source impedance Z_S = Z_Sopt ≈ 12 + j15 Ω. This condition is validated in the datasheet and requires external matching network synthesis using measured S-parameters.

Can BFR182WH6327XTSA1 replace BFR92A in existing designs?

No. BFR92A is a higher-voltage (V_CEO = 20 V), higher-power (P_tot = 400 mW) device in SOT143 package with different pinout and noise characteristics (NF_min = 1.5 dB). Direct replacement would require PCB redesign, bias recalculation, and noise matching re-optimization.

Does this part require special ESD handling during assembly?

Yes. As an ESD-sensitive device (HBM Class 2, ≤2 kV), BFR182WH6327XTSA1 requires grounded workstations, ionized air, static-dissipative packaging, and wrist straps per JEDEC JESD625-B. Board-level testing must verify no ESD-induced parameter shift after reflow or handling.

BFR182WH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Gain:: 19dB

Power - Max:: 250mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 10mA, 8V

Current - Collector (Ic) (Max):: 35mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BFR182WH6327XTSA1 FAQ

1.How can I place an order for BFR182WH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR182WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR182WH6327XTSA1 reliable?

The price and inventory of BFR182WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR182WH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BFR182WH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR182WH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR182WH6327XTSA1?

BFR182WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR182WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR182WH6327XTSA1?

For technical support, including BFR182WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR182WH6327XTSA1 requirements.

6.How does Aetrix verify that BFR182WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR182WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR182WH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BFR182WH6327XTSA1?

All BFR182WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR182WH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR182WH6327XTSA1 part is unused and in its original packaging.

Return procedure for BFR182WH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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