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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Renesas 2SC5751-T2-A

Name: 2SC5751-T2-A
Brand: Renesas
SKU: 2SC5751-T2-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC5751-T2-A

Manufacturer:: Renesas

Category:: Bipolar RF Transistors

Package:: SOT-343F

Datasheet:: 2SC5751-T2-A.pdf

Description:: SMALL SIGNAL BIPOLAR TRANSISTOR

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC5751-T2-A from Renesas Electronics is an NPN silicon RF transistor designed for medium-output power amplification at 1.8 GHz, delivering 15.0 dBm P_O(1 dB) output power with 50% collector efficiency under V_CE = 2.8 V, I_Cq = 8 mA conditions. It features HFT3 high-frequency technology (f_T = 15.0 GHz typ.), gold electrode construction for reliability, and operates in the 0.1–3.0 GHz band with S-parameters characterized up to 4.0 GHz.

For engineers reviewing the 2SC5751-T2-A datasheet, 2SC5751-T2-A pinout, 2SC5751-T2-A application, or 2SC5751-T2-A equivalent, this device is selected for compact RF front-end stages requiring stable gain, low noise (NF = 1.7 dB typ. @ 2 GHz), and robust thermal performance on standard glass-epoxy PCBs - particularly in portable wireless transceivers and ISM-band modules.

Technical Context

This transistor employs a planar epitaxial structure with gold metallization to ensure long-term stability and low 1/f noise. Its f_T = 15.0 GHz (typ.) and MAG = 16.0 dB (typ. @ 2 GHz) support linear amplification in narrowband 1.8–2.5 GHz applications, while K-factor ≥ 0.91 across 0.1–2.0 GHz confirms unconditional stability under typical bias conditions (V_CE = 3 V, I_C = 20 mA).

The device uses a flat-lead 4-pin thin-type Super Minimold package optimized for RF layout: emitter (Pin 1) and collector (Pin 2) are positioned adjacent to tape perforation for automated placement, with base (Pin 3) and substrate/collector tab (Pin 4) enabling low-inductance grounding and thermal dissipation via PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	15.0 GHz typ. - enables stable amplification up to 2.5 GHz with sufficient gain margin for matching network design.
P_O(1 dB)	15.0 dBm typ. @ 1.8 GHz - delivers 31.6 mW saturated RF output suitable for Class A/AB driver stages in portable radios.
NF	1.7 dB typ. @ 2 GHz - supports sensitive receiver LNA or IF amplifier roles where sub-2 dB noise floor is critical.
Cre	0.22 pF typ. @ V_CB = 3 V - low reverse transfer capacitance minimizes feedback instability and simplifies broadband matching.
η_C	50% typ. @ 1.8 GHz - high collector efficiency reduces thermal load on 1.08 cm² PCB land pattern, easing thermal management.
V_CEO	6.0 V - limits maximum supply rail to ≤5.5 V for safe operation in 3.3 V or 2.8 V RF systems with headroom.
I_C max	50 mA - defines absolute DC current ceiling; recommended operating I_Cq is 5–20 mA for optimal linearity vs. efficiency trade-off.

Pinout & Package

Flat-lead 4-pin thin-type Super Minimold package (JEDEC TO-236 compatible footprint), mounted on 1.08 cm² × 1.0 mm thick glass-epoxy PCB. Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base, Pin 4 = Collector Tab (internally connected to Pin 2, intended for PCB thermal pad connection).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Emitter	RF input node in common-base configuration; low-impedance path to ground reference for emitter-degeneration stability.
Pin 2	Collector	RF output node; electrically tied to Pin 4 for enhanced thermal conduction and reduced package inductance.
Pin 3	Base	DC bias and RF drive terminal; requires series R/C network for stabilization due to moderate h_FE (75–150).
Pin 4	Collector Tab	Exposed metal pad soldered to PCB copper pour; primary thermal path - must be connected to ≥1.08 cm² ground plane.

Key Features

Feature	Design Value
HFT3 high-frequency process	f_T = 15.0 GHz typ. ensures usable gain beyond 2.4 GHz ISM band without cascading stages.
Gold electrode metallization	Enables >10-year operational reliability under thermal cycling and high-frequency stress in consumer-grade environments.
Super Minimold 4-pin package	0.9 mm profile and flat leads support 0.5 mm pitch pick-and-place; Pin 4 thermal tab lowers R_{th j-a} to 600°C/W.
Medium-power RF optimization	PO(1 dB) = 15.0 dBm + η_C = 50% at 1.8 GHz balances output and efficiency for battery-powered 3G/4G front-ends.
Low Cre (0.22 pF typ.)	Reduces Miller effect, allowing stable wideband matching without neutralization networks in 1–3 GHz designs.

Applications

Cellular Handset Power Amplifier	ISM Band Transceiver Driver
Use Scenario: Final-stage PA in 1.8 GHz PCS handsets with 3.3 V supply and 10 MHz channel bandwidth. IC Role / Device Role: Medium-output Class A/AB RF power amplifier driving antenna switch module. Use Value: Delivers 15.0 dBm linear output with 50% efficiency, reducing battery drain and thermal load on compact PCBs.	Use Scenario: Transmit driver in 2.4 GHz Wi-Fi or Bluetooth SoC companion modules with discrete PA architecture. IC Role / Device Role: Pre-driver stage boosting SoC output (0 dBm) to +15 dBm before final PA. Use Value: 13.5 dB \|S21\|² gain and 1.7 dB NF preserve SNR while enabling single-stage amplification before power boost.
GPS L1 Band LNA	UWB Impulse Radio Front-End
Use Scenario: Low-noise receive amplifier for GPS L1 (1.575 GHz) receivers in automotive navigation units. IC Role / Device Role: First-stage LNA with matched 50 Ω input impedance and minimal added noise. Use Value: 1.7 dB NF at 2 GHz and high f_T ensure sensitivity down to −160 dBm while maintaining group delay flatness.	Use Scenario: Pulse-amplifier in 3.1–4.8 GHz UWB systems requiring fast transient response and low distortion. IC Role / Device Role: High-linearity broadband amplifier for nanosecond-duration Gaussian pulses. Use Value: Wideband S-parameter data (up to 4 GHz) and unconditional stability (K > 0.91) enable pulse fidelity without peaking compensation.

Cellular Handset Power Amplifier

ISM Band Transceiver Driver

Use Scenario: Final-stage PA in 1.8 GHz PCS handsets with 3.3 V supply and 10 MHz channel bandwidth.

IC Role / Device Role: Medium-output Class A/AB RF power amplifier driving antenna switch module.

Use Value: Delivers 15.0 dBm linear output with 50% efficiency, reducing battery drain and thermal load on compact PCBs.

Use Scenario: Transmit driver in 2.4 GHz Wi-Fi or Bluetooth SoC companion modules with discrete PA architecture.

IC Role / Device Role: Pre-driver stage boosting SoC output (0 dBm) to +15 dBm before final PA.

Use Value: 13.5 dB |S21|² gain and 1.7 dB NF preserve SNR while enabling single-stage amplification before power boost.

GPS L1 Band LNA

UWB Impulse Radio Front-End

Use Scenario: Low-noise receive amplifier for GPS L1 (1.575 GHz) receivers in automotive navigation units.

IC Role / Device Role: First-stage LNA with matched 50 Ω input impedance and minimal added noise.

Use Value: 1.7 dB NF at 2 GHz and high f_T ensure sensitivity down to −160 dBm while maintaining group delay flatness.

Use Scenario: Pulse-amplifier in 3.1–4.8 GHz UWB systems requiring fast transient response and low distortion.

IC Role / Device Role: High-linearity broadband amplifier for nanosecond-duration Gaussian pulses.

Use Value: Wideband S-parameter data (up to 4 GHz) and unconditional stability (K > 0.91) enable pulse fidelity without peaking compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NE85633	f_T = 10 GHz, P_O(1 dB) = 13.5 dBm @ 1.8 GHz, V_CEO = 12 V, SOT-343 package	Higher voltage rating but lower gain and output; suited for higher-supply industrial radios	Choose NE85633 when V_CC > 5 V is required and 1.5 dB lower output is acceptable.
MRF571	f_T = 18 GHz, P_O(1 dB) = 17.5 dBm @ 1.8 GHz, TO-92 package, no integrated thermal tab	Higher output and f_T, but R_{th j-a} = 1200°C/W limits continuous duty cycle on small PCBs	Choose MRF571 only with active cooling or pulsed operation; avoid in space-constrained handhelds.

Compared with NE85633 and MRF571, the 2SC5751-T2-A offers the best balance of thermal performance (600°C/W), gain (13.5 dB), and efficiency (50%) in compact 4-pin surface-mount form - making it preferred for thermally constrained, battery-operated 1.8 GHz RF stages where reliability and manufacturability are prioritized over peak f_T.

Availability

2SC5751-T2-A is available at Aetrix Electronics and suitable for cellular handset power amplifiers, ISM-band transceiver drivers, GPS L1 band LNAs, and UWB impulse radio front-ends requiring stable component supply and RoHS-compliant packaging.

Supply support for 2SC5751-T2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and RF solutions for automotive, industrial, and consumer markets.

The 2SC5751 belongs to Renesas' legacy RF transistor product line targeting medium-power amplification in portable wireless devices - designed specifically for cost-sensitive, high-volume 1–3 GHz front-end applications with emphasis on thermal robustness and assembly compatibility.

FAQ

What is the maximum recommended DC bias current for continuous operation of the 2SC5751-T2-A?

The 2SC5751-T2-A has an absolute maximum collector current (I_C) rating of 50 mA, but for reliable continuous-wave operation with thermal margin, Renesas specifies I_Cq = 8 mA as the nominal quiescent point in key RF performance curves. Operating above 20 mA requires careful thermal design due to P_tot = 205 mW limit and R_{th j-a} = 600°C/W on standard PCBs. The 2SC5751-T2-A should not be biased beyond 30 mA without derating or enhanced heatsinking.

Does the 2SC5751-T2-A require external neutralization for stable operation at 2.4 GHz?

No, the 2SC5751-T2-A does not require external neutralization at 2.4 GHz. Its stability factor K remains ≥ 0.91 across 0.1–2.0 GHz (per S-parameter tables), and unconditional stability is confirmed up to 2.5 GHz under V_CE = 3 V, I_C = 20 mA. The low Cre (0.22 pF typ.) and internal layout minimize feedback, allowing stable 2.4 GHz operation with simple input/output matching networks - a key advantage of the 2SC5751-T2-A over older RF transistors.

Can the 2SC5751-T2-A be used in Class C amplifier configurations?

The 2SC5751-T2-A is characterized and optimized for Class A and Class AB operation (e.g., I_Cq = 8 mA, V_CE = 2.8 V), and its datasheet does not provide harmonic or switching performance data. While its f_T and breakdown ratings permit theoretical Class C use, Renesas does not validate or guarantee performance in nonlinear switching modes. For proven Class C operation, alternate devices such as the 2SC4901 or MMBT918 are recommended - the 2SC5751-T2-A should be applied per its published linear RF amplifier specifications.

What is the thermal resistance (R_{th j-a}) of the 2SC5751-T2-A, and how is it measured?

The 2SC5751-T2-A has a junction-to-ambient thermal resistance (R_{th j-a}) of 600°C/W, measured when mounted on a 1.08 cm² × 1.0 mm thick glass-epoxy PCB with Pin 4 (collector tab) soldered to a dedicated copper pour. This value assumes no additional heatsink or forced airflow. Exceeding ambient temperatures above +85°C requires derating - for example, at T_A = 70°C, maximum allowable P_tot drops to ~135 mW. The 2SC5751-T2-A's thermal performance is directly tied to proper Pin 4 PCB land implementation.

Is the 2SC5751-T2-A compliant with RoHS and lead-free assembly requirements?

Yes, the 2SC5751-T2-A is RoHS-compliant and qualified for lead-free reflow soldering per J-STD-020. Renesas documents full compliance with EU RoHS Directive 2011/65/EU, including absence of lead, cadmium, mercury, hexavalent chromium, PBB, and PBDE. The flat-lead Super Minimold package uses matte tin plating compatible with SnAgCu solder profiles (peak temperature ≤ 260°C). No exemptions apply - the 2SC5751-T2-A meets industrial and consumer environmental standards without restriction.

2SC5751-T2-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SOT-343F

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 6V

Frequency - Transition:: 15GHz

Noise Figure (dB Typ @ f):: 1.7dB @ 2GHz

Gain:: 16dB

Power - Max:: 205mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 75 @ 20mA, 3V

Current - Collector (Ic) (Max):: 50mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-343F

2SC5751-T2-A FAQ

1.How can I place an order for 2SC5751-T2-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC5751-T2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC5751-T2-A reliable?

The price and inventory of 2SC5751-T2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5751-T2-A is usually 5 days.

3.What payment methods are accepted for 2SC5751-T2-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5751-T2-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC5751-T2-A?

2SC5751-T2-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC5751-T2-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC5751-T2-A?

For technical support, including 2SC5751-T2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5751-T2-A requirements.

6.How does Aetrix verify that 2SC5751-T2-A is sourced from the original manufacturer or authorized distributors?

All 2SC5751-T2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5751-T2-A meets industry standards.

7.What is the process for return or replacement of 2SC5751-T2-A?

All 2SC5751-T2-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5751-T2-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC5751-T2-A part is unused and in its original packaging.

Return procedure for 2SC5751-T2-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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