Infineon Technologies BCR08PNB6327XT
- Part No.:
- BCR08PNB6327XT
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR08PNB6327XT.pdf
- Description:
- TRANS NPN/PNP PREBIAS SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:7,416
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Product details
Overview
BCR08PNB6327XT from Infineon Technologies is a dual NPN/PNP silicon digital transistor array in SOT-363 package, featuring integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), 50 V VCEO, 100 mA IC, and AEC-Q101 qualification for automotive interface and switching applications.
For engineers reviewing the BCR08PNB6327XT datasheet, BCR08PNB6327XT pinout, BCR08PNB6327XT application, or BCR08PNB6327XT equivalent, this device serves as a space-saving, bias-resistor-equipped dual-transistor solution for level-shifting, logic interfacing, and discrete driver circuits in automotive ECUs and industrial control modules.
Technical Context
This dual digital transistor integrates electrically isolated NPN and PNP transistors with monolithically embedded base bias networks-R1 (2.2 kΩ) and R2 (47 kΩ)-enabling direct TTL/CMOS logic-level drive without external resistors. Each transistor supports independent switching with matched VCEsat ≤ 0.3 V at IC/IB = 20.
Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and operates across –65 °C to +150 °C junction temperature range, with thermal resistance RthJS ≤ 140 K/W and total power dissipation of 250 mW at TS = 115 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Supports rail-to-rail switching in 24 V automotive systems with margin. |
| IC | 100 mA - Sufficient for driving small relays, LEDs, or gate inputs of power MOSFETs. |
| VCEsat | ≤ 0.3 V @ IC = 10 mA, IB = 0.5 mA - Minimizes conduction loss and self-heating in saturated switch mode. |
| hFE | 70 min @ IC = 5 mA, VCE = 5 V - Ensures reliable current amplification under typical logic-driven bias conditions. |
| R1 / R2 | 2.2 kΩ / 47 kΩ - Provides fixed, temperature-stable input biasing for predictable turn-on/off thresholds. |
| fT | 170 MHz typ - Enables use in medium-speed digital signal routing and pulse-width modulation interfaces. |
| Ccb | 2 pF max @ VCB = 10 V - Limits capacitive loading on high-impedance logic outputs and preserves signal edge integrity. |
Pinout & Package
SOT-363 (SC-88) surface-mount package: 6-pin, 2.1 mm × 1.25 mm footprint, 0.65 mm pitch, gull-wing leads, RoHS-compliant, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | NPN Emitter | Common emitter node for NPN transistor; tied to system ground or low-side return path. |
| 2 (B1) | NPN Base (via R1/R2 network) | Input terminal for NPN side; internal R1 connects to pin 1, R2 to pin 3 - enables single-pin logic control. |
| 3 (C2) | PNP Collector | Output collector for PNP transistor; sinks current when active, used for high-side switching or pull-down. |
| 4 (E2) | PNP Emitter | Common emitter node for PNP transistor; typically connected to VCC rail. |
| 5 (B2) | PNP Base (via R1/R2 network) | Input terminal for PNP side; internal R1 connects to pin 4, R2 to pin 6 - allows complementary logic drive. |
| 6 (C1) | NPN Collector | Output collector for NPN transistor; sources current when active, used for low-side switching or pull-up. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated NPN/PNP topology | Enables complementary push-pull output stages or bidirectional level translation without external transistor pairing. |
| Integrated bias resistor network (R1/R2) | Eliminates four external resistors per channel, reducing PCB area by >30% and assembly cost in interface designs. |
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control, body electronics, and ADAS sensor interfaces. |
| Low VCEsat and high hFE | Ensures robust saturation at low drive currents (e.g., 0.5 mA base), improving noise immunity and reducing MCU GPIO loading. |
| Thermal performance (RthJS ≤ 140 K/W) | Supports continuous operation at full rated current in compact enclosures with minimal heatsinking. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Input/Output Interface |
|---|---|
Use Scenario: Driving LED status indicators and small solenoids from 3.3 V/5 V microcontroller GPIOs in door module ECUs. IC Role / Device Role / Timing Role: Dual digital transistor provides isolated, resistor-biased NPN (low-side) and PNP (high-side) switching for bidirectional load control. Use Value: Reduces component count by replacing two discrete transistors + four bias resistors, while maintaining AEC-Q101 compliance and thermal stability up to 125 °C ambient. | Use Scenario: Level-shifting between 24 V field-side signals and 3.3 V logic in modular I/O cards. IC Role / Device Role / Timing Role: Acts as a voltage-tolerant interface buffer with built-in current limiting and fast turn-off via R2 feedback. Use Value: Eliminates need for external Zener clamping or optocouplers in non-isolated 24 V digital input conditioning, lowering BOM cost and board space. |
| Consumer Appliance Motor Driver Stage | Medical Diagnostic Equipment Signal Conditioning |
Use Scenario: Controlling small DC brush motors and buzzer drivers in smart home appliances. IC Role / Device Role / Timing Role: NPN/PNP pair delivers complementary drive to H-bridge half-bridges or enables simple forward/reverse motor control. Use Value: Delivers <100 ns propagation delay and <0.3 V saturation drop, minimizing power loss and audible coil whine during PWM operation. | Use Scenario: Isolating analog front-end logic from noisy power supply domains in portable ultrasound or patient monitor subsystems. IC Role / Device Role / Timing Role: Functions as a low-noise, low-leakage (IEBO ≤ 164 µA) digital switch for enabling/disabling sensor bias rails. Use Value: Guarantees <100 nA cutoff leakage at 5 V reverse bias, preserving signal integrity in µV-level analog measurement paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR108S | Same SOT-363 package, identical R1/R2 values, but lower hFE (min 60 vs. 70) and no AEC-Q101 qualification. | Targeted at consumer-grade industrial controls where automotive reliability is not required. | Select when cost sensitivity outweighs automotive qualification needs and hFE margin is acceptable. |
| NSVD20011MUT1G | ON Semiconductor part; same dual NPN/PNP topology, but R1 = 4.7 kΩ, R2 = 47 kΩ (higher input threshold), and only AEC-Q100 qualified. | Used in infotainment and telematics modules requiring higher Vi(on) for noise immunity in mixed-signal environments. | Choose when higher input voltage threshold (Vi(on) up to 1.3 V) is needed to reject EMI in high-noise cabins. |
Compared with BCR108S and NSVD20011MUT1G, BCR08PNB6327XT offers superior hFE margin and full AEC-Q101 validation-making it optimal for safety-critical automotive switching where consistent gain and long-term reliability under thermal cycling are mandatory.
Availability
BCR08PNB6327XT is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and medical diagnostic equipment requiring stable component supply and long-lifecycle support.
Supply support for BCR08PNB6327XT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and manufacturing infrastructure.
The BCR08PN series belongs to Infineon's automotive-qualified digital transistor portfolio, engineered specifically for space-constrained, high-reliability interface and switching functions in engine control units, lighting systems, and ADAS sensors.
FAQ
What is the maximum operating temperature for BCR08PNB6327XT?
The BCR08PNB6327XT has a maximum junction temperature (Tj) of 150 °C and a storage temperature range of –65 °C to +150 °C. Its thermal resistance RthJS is ≤140 K/W, enabling continuous operation at full rated current in ambient temperatures up to 125 °C when mounted on standard FR-4 PCB with recommended copper pour.
Can BCR08PNB6327XT replace discrete transistors and bias resistors in existing designs?
Yes-BCR08PNB6327XT directly replaces one NPN and one PNP transistor plus four external bias resistors (two per transistor). Its pinout maps each transistor's emitter, base (with internal R1/R2), and collector to dedicated pins, allowing drop-in substitution in most SOT-363-compatible layouts without schematic or layout changes.
Is the device suitable for PWM-driven loads like small DC motors?
Yes-the BCR08PNB6327XT supports PWM operation up to several hundred kHz due to its 170 MHz transition frequency (fT) and low VCEsat (≤0.3 V). Its fast turn-on/off characteristics and low Ccb (2 pF) minimize switching losses and electromagnetic emissions in motor driver stages.
Does BCR08PNB6327XT require external protection components in automotive 12 V/24 V systems?
No external TVS or flyback diodes are required for basic switching, as the device's 50 V VCEO and VCBO ratings provide sufficient margin against load dump transients (ISO 7637-2 Pulse 5a: 12 V systems up to 35 V, 24 V systems up to 60 V). However, external clamping remains recommended for sustained overvoltage events beyond specification limits.
BCR08PNB6327XT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 170MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR08PNB6327XT FAQ
1.How can I place an order for BCR08PNB6327XT through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR08PNB6327XT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR08PNB6327XT reliable?
The price and inventory of BCR08PNB6327XT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR08PNB6327XT is usually 5 days.
3.What payment methods are accepted for BCR08PNB6327XT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR08PNB6327XT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR08PNB6327XT?
BCR08PNB6327XT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR08PNB6327XT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR08PNB6327XT?
For technical support, including BCR08PNB6327XT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR08PNB6327XT requirements.
6.How does Aetrix verify that BCR08PNB6327XT is sourced from the original manufacturer or authorized distributors?
All BCR08PNB6327XT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR08PNB6327XT meets industry standards.
7.What is the process for return or replacement of BCR08PNB6327XT?
All BCR08PNB6327XT units undergo pre-shipment inspection (PSI). If there is an issue with BCR08PNB6327XT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR08PNB6327XT part is unused and in its original packaging.
Return procedure for BCR08PNB6327XT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR08PNB6327XT Tags

-
SMUN5311DW1T1G
onsemi

-
UMH9NTN
Rohm Semiconductor

-
PUMH13,115
Nexperia USA Inc.

-
PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

-
PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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