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Infineon Technologies BCR08PNE6327BTSA1
- Part No.:
- BCR08PNE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR08PNE6327BTSA1.pdf
- Description:
- TRANS NPN/PNP PREBIAS SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:2,802
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Product details
Overview
BCR08PNE6327BTSA1 from Infineon Technologies is a dual NPN/PNP silicon digital transistor array in SOT-363 package, featuring integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), VCEO = 50 V, IC = 100 mA per transistor, and AEC-Q101 qualification for automotive interface and switching applications.
For engineers reviewing the BCR08PNE6327BTSA1 datasheet, BCR08PNE6327BTSA1 pinout, BCR08PNE6327BTSA1 application, or BCR08PNE6327BTSA1 equivalent, this device serves as a space-saving, bias-resistor-equipped dual transistor solution for level-shifting, logic interfacing, and low-power driver circuits in constrained PCB layouts.
Technical Context
This dual digital transistor integrates galvanically isolated NPN and PNP transistors with monolithically embedded base bias networks-R1 (2.2 kΩ) and R2 (47 kΩ)-enabling direct logic-level drive without external resistors. It supports common-emitter switching with guaranteed VCE(sat) ≤ 0.3 V at IC = 10 mA / IB = 0.5 mA for both polarities.
Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and operates across Tj = –65 °C to 150 °C. Its fT = 170 MHz (typ.) and Ccb = 2 pF support high-speed digital switching up to ~10 MHz in buffered gate-drive or signal-inversion roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown in switching mode |
| IC | 100 mA - Continuous DC collector current per transistor, defining load-driving capability |
| R1 / R2 | 2.2 kΩ / 47 kΩ - Integrated bias network enabling single-resistor logic interface without external components |
| VCE(sat) | ≤ 0.3 V - Low saturation voltage ensures minimal power loss and heat generation at 10 mA load |
| fT | 170 MHz (typ.) - Transition frequency supporting reliable operation in >10 MHz digital switching applications |
| AEC-Q101 | Qualified - Validated for automotive use including temperature cycling, HTRB, and ESD robustness |
| Ptot | 250 mW @ TS = 115 °C - Total package power dissipation limit under defined solder-point thermal condition |
Pinout & Package
SOT-363 (SC-88) 6-pin plastic surface-mount package with 0.65 mm pitch, 2.1 mm × 1.25 mm footprint, and exposed thermal pad (not electrically connected). Pin 1 marked by laser dot or notch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | NPN Emitter | Emitter terminal of first NPN transistor; referenced to ground in common-emitter switch configuration |
| 2 (B1) | NPN Base (via R1/R2) | Input node for NPN section; internal R1–R2 divider sets bias for logic-compatible turn-on |
| 3 (C2) | PNP Collector | Collector of second transistor (PNP); connects to positive rail in high-side switching |
| 4 (E2) | PNP Emitter | Emitter terminal of PNP transistor; typically tied to VCC in complementary output stages |
| 5 (B2) | PNP Base (via R1/R2) | Input node for PNP section; shares same resistor ratio topology as B1 but inverted polarity response |
| 6 (C1) | NPN Collector | Output collector of NPN transistor; sinks current to ground when driven high at B1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN/PNP topology | Enables complementary push-pull or inverter functions in single footprint, reducing board area by ~40% vs discrete pairs |
| Integrated bias resistors | R1 = 2.2 kΩ ±30%, R2 = 47 kΩ ±30%; eliminates 4 external resistors per channel and associated layout error risk |
| Galvanic isolation between transistors | No shared substrate or well; prevents crosstalk and enables independent switching control of NPN and PNP sections |
| AEC-Q101 qualification | Validated for automotive under-hood environments including 1000-hr HTOL, -40 °C to 125 °C operating range, and 8 kV HBM ESD |
Applications
| Automotive Body Control Module | Industrial PLC Input Interface |
|---|---|
Use Scenario: Driving LED status indicators and small solenoids from 3.3 V/5 V microcontroller GPIOs in BCM modules. IC Role / Device Role: Level-shifting digital switch translating MCU logic levels to 12 V loads with built-in current limiting. Use Value: Eliminates need for discrete bias resistors and separate NPN+PNP pairs, cutting BOM count and improving thermal matching. | Use Scenario: Converting 24 V industrial sensor signals to 3.3 V logic levels for FPGA or ARM-based controllers. IC Role / Device Role: Active pull-up/pull-down buffer with configurable input threshold via internal R1/R2 ratio. Use Value: Provides noise-immune signal conditioning with guaranteed Vi(on)/Vi(off) thresholds across temperature (–40 °C to 125 °C). |
| USB-C Power Delivery Controller Interface | Smart Home Relay Driver Board |
Use Scenario: Enabling/disabling USB-C CC line terminations and VCONN switches based on PD protocol negotiation. IC Role / Device Role: Dual-channel logic-controlled switch managing bidirectional analog/digital signaling paths. Use Value: Delivers matched turn-on timing and low VCE(sat) (<0.3 V) to minimize voltage drop in critical CC-line biasing circuits. | Use Scenario: Driving 5 V coil relays from ESP32 or Raspberry Pi GPIOs in compact smart home hubs. IC Role / Device Role: High-gain (hFE ≥ 70 @ 5 mA) digital transistor pair providing >20 mA base drive with <1 µA leakage. Use Value: Ensures reliable relay actuation while maintaining <100 nA ICBO to prevent false triggering during standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR108S E6327 | Same SOT-363 package, identical R1/R2 values, but rated for VCEO = 60 V and IC = 100 mA; higher breakdown margin | Preferred where system transients exceed 50 V or long-term reliability at elevated voltage stress is required | Select BCR108S when operating near 50 V rails or in unregulated 48 V systems |
| NSBC114YDXV6T1G | ON Semiconductor part in SOT-563; R1 = 10 kΩ, R2 = 10 kΩ (1:1 ratio); lower hFE (min 35), no AEC-Q101 rating | Acceptable for consumer-grade logic buffering but unsuitable for automotive or industrial temperature-critical designs | Choose only for cost-sensitive non-automotive applications with stable 3.3 V/5 V supplies |
Compared with BCR108S, BCR08PNE6327BTSA1 offers tighter VCEO margin and AEC-Q101 assurance; versus NSBC114YDXV6T1G, it delivers superior gain consistency, lower saturation voltage, and full automotive qualification-critical for safety-relevant signal conditioning.
Availability
BCR08PNE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, USB-C power delivery subsystems, and smart home relay driver boards requiring stable component supply and long-lifecycle support.
Supply support for BCR08PNE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and R&D centers.
This device belongs to Infineon's BCR family of digital transistors-designed specifically for replacing discrete NPN+PNP + bias resistor combinations in automotive and industrial interface circuits where space, reliability, and qualification matter.
FAQ
What is the maximum allowable continuous current per transistor?
The BCR08PNE6327BTSA1 supports a DC collector current of 100 mA per transistor under specified thermal conditions (TS = 115 °C). Derating is required above this temperature; at 125 °C junction, max IC drops to ~75 mA per transistor per the Ptot vs. TS curve.
Does this device require external base resistors for logic-level drive?
No. The device integrates R1 = 2.2 kΩ and R2 = 47 kΩ internally for each transistor, enabling direct connection to 3.3 V or 5 V logic outputs. External resistors are unnecessary unless custom bias ratios or enhanced ESD protection are needed.
Can the NPN and PNP sections be used simultaneously in a push-pull configuration?
Yes. The galvanic isolation between transistors allows independent control of both sections. When configured as complementary switches-with E1 grounded, C1 driving load to GND (NPN), and E2 tied to VCC, C2 driving load to VCC (PNP)-it forms a functional push-pull stage with matched timing characteristics.
Is the SOT-363 package lead-free and RoHS compliant?
Yes. The BCR08PNE6327BTSA1 uses a Pb-free (RoHS-compliant) SOT-363 package, verified per JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and qualified for reflow soldering up to 260 °C peak temperature.
BCR08PNE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 170MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR08PNE6327BTSA1 FAQ
1.How can I place an order for BCR08PNE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR08PNE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR08PNE6327BTSA1 reliable?
The price and inventory of BCR08PNE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR08PNE6327BTSA1 is usually 5 days.
3.What payment methods are accepted for BCR08PNE6327BTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR08PNE6327BTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR08PNE6327BTSA1?
BCR08PNE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR08PNE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR08PNE6327BTSA1?
For technical support, including BCR08PNE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR08PNE6327BTSA1 requirements.
6.How does Aetrix verify that BCR08PNE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BCR08PNE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR08PNE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BCR08PNE6327BTSA1?
All BCR08PNE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR08PNE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR08PNE6327BTSA1 part is unused and in its original packaging.
Return procedure for BCR08PNE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR08PNE6327BTSA1 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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