Infineon Technologies BCR08PNE6433HTMA1

Overview

BCR08PNE6433HTMA1 from Infineon Technologies is a dual NPN/PNP silicon digital transistor array in SOT-363 package, featuring integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), 50 V V_CEO, 100 mA I_C, and AEC-Q101 qualification for automotive interface and switching applications.

For engineers reviewing the BCR08PNE6433HTMA1 datasheet, BCR08PNE6433HTMA1 pinout, BCR08PNE6433HTMA1 application, or BCR08PNE6433HTMA1 equivalent, this device serves as a galvanically isolated dual-channel level-shifting switch with defined input thresholds (V_i(on) ≤ 1.1 V, V_i(off) ≥ 0.4 V) and low saturation voltage (V_CE(sat) ≤ 0.3 V at I_C/I_B = 20).

Technical Context

This dual digital transistor integrates two electrically isolated NPN and PNP transistors sharing no internal connection - enabling independent high-side and low-side switching in compact space-constrained designs. Each channel includes monolithically integrated base bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) to eliminate external components for standard logic-level drive.

It operates across -65 °C to +150 °C junction temperature range with thermal resistance R_thJS ≤ 140 K/W, supporting reliable performance in under-hood automotive environments. Its 170 MHz f_T and 2 pF C_cb support moderate-speed digital switching up to ~10 MHz edge rates without oscillation risk.

Key Specifications

Pinout & Package

SOT-363 (SC-70-6) surface-mount package: 1.3 mm × 2.1 mm footprint, 0.95 mm height, lead-free, RoHS-compliant, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual digital transistor applications.

Compared with BCR08PNE6433HTMA1, BCR108S offers higher voltage headroom at same footprint, while NSVD2001MW6T1G provides enhanced noise rejection via elevated input thresholds - both retain pin compatibility but differ in bias network ratio and thermal derating curves.

Availability

BCR08PNE6433HTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial I/O modules, and consumer appliance control systems requiring stable component supply and long-term lifecycle assurance.

Supply support for BCR08PNE6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

BCR08PNE6433HTMA1 belongs to Infineon's BCR series of digital transistors, designed specifically for automotive and industrial interface applications requiring integrated biasing, galvanic isolation, and AEC-Q101 reliability.

FAQ

What is the maximum allowable continuous power dissipation at 85 °C ambient?

At T_A = 85 °C, the maximum continuous power dissipation is 150 mW, derived from the derating curve in Figure 5 of the datasheet: P_tot = 250 mW × (1 − (85 − 25)/115) ≈ 150 mW. This assumes proper PCB copper area (≥ 1 cm²) and no forced airflow.

Can BCR08PNE6433HTMA1 drive a 12 V relay coil drawing 80 mA?

Yes - its 100 mA I_C rating and ≤ 0.3 V V_CE(sat) ensure safe operation with 80 mA relay coils. At I_C = 80 mA and I_B = 4 mA (I_C/I_B = 20), V_CE(sat) remains below 0.28 V, resulting in only 22.4 mW dissipation - well within the 150 mW limit at 85 °C ambient.

Is pin 1 orientation consistent across all SOT-363 reels?

No - the datasheet explicitly states "for symmetric types no defined Pin 1 orientation in reel." Orientation depends on tape loading direction (EHA07193 diagram); always verify pin 1 via top-marking "WFs" or laser code adjacent to corner chamfer before placement.

Does the built-in resistor network support 1.8 V logic input?

No - V_i(on) max is 1.1 V at I_C = 2 mA, and V_i(off) min is 0.4 V. With 1.8 V logic, the base-emitter junction will be strongly forward-biased, causing excessive base current (~300 µA through R1), potentially degrading h_FE stability and increasing power consumption beyond design intent.