Infineon Technologies BCR10PNH6727XTSA1

Overview

BCR10PNH6727XTSA1 from Infineon Technologies is a dual NPN/PNP silicon digital transistor array in SOT-363 package, featuring integrated bias resistors (R1 = R2 = 10 kΩ), 50 V V_CEO, 100 mA I_C, and AEC-Q101 qualification for automotive interface and switching applications.

For engineers reviewing the BCR10PNH6727XTSA1 datasheet, BCR10PNH6727XTSA1 pinout, BCR10PNH6727XTSA1 application, or BCR10PNH6727XTSA1 equivalent, this device serves as a compact, galvanically isolated dual-channel logic-level switch with defined input thresholds (V_i(on) = 1–2.5 V, V_i(off) = 0.8–1.5 V) and low saturation voltage (V_CE(sat) ≤ 0.3 V at 10 mA).

Technical Context

This dual digital transistor integrates two electrically isolated NPN and PNP transistors with monolithically embedded base bias resistors-enabling direct TTL/CMOS-level drive without external components. Each channel supports independent switching with matched R1/R2 ratio (0.9–1.1) and identical breakdown ratings (V_(BR)CEO = 50 V, V_(BR)CBO = 50 V).

It operates across –65 °C to +150 °C junction temperature, delivers f_T = 130 MHz (IC = 10 mA), and maintains stable h_FE ≥ 30 (IC = 5 mA, V_CE = 5 V), making it suitable for high-speed, thermally constrained automotive signal conditioning and level translation.

Key Specifications

Pinout & Package

SOT-363 (SC-88) 6-pin surface-mount package with exposed thermal pad; dimensions 2.1 mm × 1.25 mm × 0.9 mm; RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual digital transistor applications.

Compared with BCR10PNH6727XTSA1, the BCR112MH6327XTSA1 offers half the functionality in the same footprint, while the NSVD120DP033T1G matches electrical specs but lacks automotive qualification-making the original the sole choice for AEC-Q101-compliant dual-channel designs.

Availability

BCR10PNH6727XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, USB-C power delivery controllers, and smart lighting systems requiring stable component supply and long-term lifecycle assurance.

Supply support for BCR10PNH6727XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification infrastructure.

This part belongs to Infineon's BCR family of digital transistors-designed specifically for replacing discrete resistor-transistor combinations in automotive signal interface and logic-level translation applications.

FAQ

What is the maximum allowable continuous collector current per transistor?

The absolute maximum DC collector current is 100 mA per transistor, as specified in the "Maximum Ratings" table. This rating assumes T_S ≤ 115 °C and accounts for thermal derating above that temperature. At ambient temperatures exceeding 85 °C, current must be reduced per the P_tot vs. T_S curve to maintain junction temperature ≤ 150 °C.

Can BCR10PNH6727XTSA1 drive a 5 V logic input directly from a 24 V source?

No-it cannot directly level-shift 24 V to 5 V logic. Its input voltage limits are V_i(fwd) = 40 V and V_i(rev) = 10 V, but the internal resistor divider is optimized for 3.3 V/5 V logic drive. For 24 V input, an external voltage divider or Zener clamp is required before the B1/B2 pins to avoid exceeding V_i(rev).

Is the SOT-363 package thermally enhanced?

The SOT-363 package has no exposed thermal pad or metal slug; its thermal resistance R_thJS is ≤ 140 K/W. Effective heat dissipation requires adequate copper area (≥ 25 mm² per side) and thermal vias under the package. It is not rated for >250 mW continuous dissipation without board-level thermal design.

Does the device support simultaneous conduction of both transistors?

Yes-both transistors operate independently with galvanic isolation. There is no internal coupling or shared current path. Simultaneous conduction is permitted as long as total power dissipation remains within the 250 mW limit at the given case temperature and individual current stays ≤ 100 mA per channel.