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Infineon Technologies BCR119SH6327XTSA1
- Part No.:
- BCR119SH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR119SH6327XTSA1.pdf
- Description:
- TRANS 2NPN PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:8,447
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Product details
Overview
BCR119SH6327XTSA1 from Infineon Technologies is an NPN silicon digital transistor with integrated 4.7 kΩ base resistor, designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features VCEO = 50 V, IE = 100 mA, hFE = 120–630, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, and AEC-Q101 qualification.
For engineers reviewing the BCR119SH6327XTSA1 datasheet, BCR119SH6327XTSA1 pinout, BCR119SH6327XTSA1 application, or BCR119SH6327XTSA1 equivalent, this page delivers verified electrical characteristics, SOT-363 package mapping, thermal resistance (RthJS ≤ 140 K/W), input voltage thresholds (Vi(on) = 0.5–1.1 V), and automotive-grade reliability data.
Technical Context
This dual-transistor device integrates two electrically isolated NPN transistors with matched characteristics in a single SOT-363 (SC-88) package. Each transistor includes a monolithically integrated 4.7 kΩ base resistor (R1), enabling direct logic-level drive without external bias components.
It operates across –65 °C to +150 °C junction temperature, supports pulsed operation up to 300 µs with duty cycle <2%, and delivers fT = 150 MHz at IC = 10 mA/VCE = 5 V - suitable for medium-speed digital switching in CAN/LIN interface stages and LED driver pre-drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive supply rails with margin. |
| IE | 100 mA - Absolute maximum DC emitter current per transistor; defines load-driving capability for small solenoids or LEDs. |
| hFE | 120–630 - DC current gain range at IC = 5 mA/VCE = 5 V; ensures robust saturation across production spread. |
| VCE(sat) | ≤0.3 V - Collector-emitter saturation voltage at IC = 10 mA/IB = 0.5 mA; minimizes conduction loss in switching applications. |
| R1 | 4.7 kΩ (3.2–6.2 kΩ) - Integrated base resistor value; sets input current for logic-compatible turn-on with 3.3 V/5 V microcontrollers. |
| fT | 150 MHz - Transition frequency at IC = 10 mA/VCE = 5 V; supports reliable switching up to ~10–20 MHz square waves. |
| RthJS | ≤140 K/W - Junction-to-soldering-point thermal resistance; determines safe power derating on standard FR4 PCBs. |
Pinout & Package
SOT-363 (SC-88) 6-pin plastic package with exposed pad for thermal enhancement; RoHS-compliant, Pb-free, qualified per AEC-Q101.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of Transistor 1 | Low-side return path for first transistor; internally connected to substrate ground reference. |
| 2 (B2) | Base of Transistor 2 | Logic-input node for second transistor; driven through internal R1 resistor. |
| 3 (C2) | Collector of Transistor 2 | Output switch node for second transistor; rated for 50 V, 100 mA continuous. |
| 4 (E2) | Emitter of Transistor 2 | Low-side return path for second transistor; electrically isolated from E1. |
| 5 (B1) | Base of Transistor 1 | Logic-input node for first transistor; driven through internal R1 resistor. |
| 6 (C1) | Collector of Transistor 1 | Output switch node for first transistor; rated for 50 V, 100 mA continuous. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched NPN transistors | Two isolated, process-matched transistors in one SOT-363 die; reduces board area vs. discrete pairs and improves timing consistency. |
| Integrated base resistor | Monolithic 4.7 kΩ R1 per transistor eliminates external bias components and simplifies layout for MCU GPIO interfacing. |
| AEC-Q101 qualification | Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock testing. |
| High fT and low Ccb | 150 MHz fT and 3 pF collector-base capacitance enable fast edge rates and minimal propagation delay in digital switching. |
Applications
| Automotive Body Control Module | Industrial PLC Input Stage |
|---|---|
Use Scenario: Driving 12 V indicator LEDs and small relays in door modules and lighting controllers. IC Role / Device Role / Timing Role: Digital switch translating microcontroller GPIO signals into load-current paths with built-in current limiting. Use Value: Eliminates need for discrete base resistors and dual-transistor placement; reduces BOM count and layout area by >40%. | Use Scenario: Level-shifting and isolation between 3.3 V FPGA I/O and 24 V field sensors in modular I/O cards. IC Role / Device Role / Timing Role: Interface buffer providing galvanic separation and logic-compatible input thresholds (Vi(on) = 0.5–1.1 V). Use Value: Enables direct connection to 3.3 V logic without level translators; VCE(sat) ≤ 0.3 V ensures minimal voltage drop at 10 mA loads. |
| Automotive LIN Bus Transceiver Bias | Consumer Appliance Motor Driver Pre-stage |
Use Scenario: Providing pull-up/pull-down bias for LIN bus line drivers in seat control and HVAC nodes. IC Role / Device Role / Timing Role: Fast-switching active pull-up element with matched dual structure ensuring symmetrical rise/fall times. Use Value: Dual-transistor matching reduces skew between TX/RX bias paths; fT = 150 MHz supports LIN's 20.5 kbps signaling with margin. | Use Scenario: Enabling/disabling gate drive signals to external MOSFETs in BLDC fan controllers. IC Role / Device Role / Timing Role: Logic-controlled enable switch isolating high-voltage gate driver ICs from MCU outputs. Use Value: VCEO = 50 V withstands back-EMF spikes; RthJS ≤ 140 K/W allows stable operation at 85 °C ambient in enclosed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR116SH6327XTSA1 | Single-transistor variant in SOT-23; same R1 = 4.7 kΩ, but no dual topology. | Lacks dual-channel integration; requires two devices for matched pair functions. | Select when only one switch is needed and board space is not constrained. |
| NSVD2101PT3G | ON Semiconductor dual digital transistor; R1 = 10 kΩ, hFE = 100–300, VCEO = 50 V, SOT-363. | Higher input resistance reduces drive current; lower hFE limits max load current at same VBE. | Choose if higher input impedance is required to reduce MCU GPIO loading. |
Compared with BCR119SH6327XTSA1, BCR116SH6327XTSA1 saves cost for single-channel use but doubles component count for dual functions, while NSVD2101PT3G offers higher input impedance at the expense of reduced current gain and output drive strength.
Availability
BCR119SH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and consumer appliance motor control requiring stable component supply and AEC-Q101 compliance.
Supply support for BCR119SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
The BCR119S series belongs to Infineon's automotive-qualified digital transistor product line, engineered specifically for space-constrained, high-reliability switching in vehicle networks and industrial automation interfaces.
FAQ
What is the maximum operating temperature for BCR119SH6327XTSA1?
The junction temperature rating is 150 °C, and the storage temperature range is –65 °C to +150 °C. At TS = 115 °C (case/solder point), the total power dissipation is derated to 250 mW. Thermal design must account for RthJS ≤ 140 K/W and PCB copper area per Infineon's AN2007-08-02 guidelines.
Does BCR119SH6327XTSA1 require external base resistors?
No - each transistor integrates a monolithic 4.7 kΩ base resistor (R1), enabling direct connection to 3.3 V or 5 V logic outputs. External resistors are unnecessary unless specific current limiting or threshold adjustment is required beyond the specified Vi(on)/Vi(off) ranges.
How are the two transistors isolated within the SOT-363 package?
The two NPN transistors share no internal electrical connection - their emitters (E1, E2), bases (B1, B2), and collectors (C1, C2) are fully isolated terminals. This allows independent switching, differential signaling, or complementary configurations without crosstalk or shared substrate paths.
Is BCR119SH6327XTSA1 compatible with lead-free reflow profiles?
Yes - it is RoHS-compliant and Pb-free, qualified for standard JEDEC J-STD-020D reflow profiles with peak temperatures up to 260 °C. The package uses matte tin plating and meets MSL3 moisture sensitivity requirements when stored per datasheet handling instructions.
BCR119SH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 150MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR119SH6327XTSA1 FAQ
1.How can I place an order for BCR119SH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR119SH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR119SH6327XTSA1 reliable?
The price and inventory of BCR119SH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR119SH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BCR119SH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR119SH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR119SH6327XTSA1?
BCR119SH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR119SH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR119SH6327XTSA1?
For technical support, including BCR119SH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR119SH6327XTSA1 requirements.
6.How does Aetrix verify that BCR119SH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BCR119SH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR119SH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BCR119SH6327XTSA1?
All BCR119SH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR119SH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR119SH6327XTSA1 part is unused and in its original packaging.
Return procedure for BCR119SH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR119SH6327XTSA1 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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