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Infineon Technologies BCR129SH6327XTSA1
- Part No.:
- BCR129SH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR129SH6327XTSA1.pdf
- Description:
- TRANS 2NPN PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:7,320
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Product details
Overview
BCR129SH6327XTSA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 10 kΩ), designed for switching, inverting, interfacing, and driver circuits in automotive and industrial control systems. It features VCEO = 50 V, IC = 100 mA, hFE = 120–630, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, and AEC-Q101 qualification.
For engineers reviewing the BCR129SH6327XTSA1 datasheet, BCR129SH6327XTSA1 pinout, BCR129SH6327XTSA1 application, or BCR129SH6327XTSA1 equivalent, key selection criteria include built-in R1 tolerance (7–13 kΩ), dual-transistor matching in SOT363, thermal resistance RthJS ≤ 140 K/W, and guaranteed operation up to Tj = 150 °C.
Technical Context
This device integrates two matched NPN transistors with monolithically embedded base bias resistors in a single SOT363 package, enabling compact dual-channel logic-level switching without external bias networks. Its design supports common-emitter switching with defined input thresholds (Vi(on) = 0.5–1.1 V, Vi(off) = 0.4–1 V) and low saturation voltage under standardized test conditions (IC/IB = 20).
The BCR129S variant is thermally optimized for surface-mount applications with Ptot = 250 mW at TS ≤ 115 °C and RthJS ≤ 140 K/W, meeting AEC-Q101 stress testing requirements for automotive electronics reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in 24 V automotive load-switching applications. |
| IC | 100 mA - Continuous collector current rating; supports driving small relays, LEDs, or logic inputs without external current limiting. |
| hFE | 120–630 - DC current gain at IC = 5 mA/VCE = 5 V; ensures reliable saturation across temperature and process variation. |
| VCE(sat) | ≤ 0.3 V - Collector-emitter saturation voltage at IC = 10 mA/IB = 0.5 mA; minimizes power loss and self-heating in high-duty-cycle switching. |
| R1 | 7–13 kΩ - Integrated base bias resistor tolerance; eliminates discrete resistor placement and reduces PCB footprint by ~2 mm² per channel. |
| fT | 150 MHz - Transition frequency at IC = 10 mA/VCE = 5 V; enables stable operation in PWM frequencies up to 10 MHz with adequate gain margin. |
| Tj max | 150 °C - Maximum junction temperature; allows deployment in engine bay or under-hood modules without derating below ambient 105 °C. |
Pinout & Package
SOT363 (SC-88) 6-pin plastic package with dual isolated transistor structure and exposed thermal pad; dimensions per Infineon outline EHA07265; RoHS-compliant, Pb-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B1) | Base of Transistor 1 | Input node for first NPN switch; internally connected to R1 (10 kΩ) to pin 4 (C1). |
| 2 (E1) | Emiter of Transistor 1 | Common emitter reference for TR1; tied to ground or low-side return path in interface circuits. |
| 3 (C1) | Collector of Transistor 1 | Output node for TR1; connects to load (e.g., LED anode or relay coil) with internal R1 bias path. |
| 4 (E2) | Emiter of Transistor 2 | Common emitter reference for TR2; electrically isolated from E1 but co-packaged for thermal coupling. |
| 5 (B2) | Base of Transistor 2 | Input node for second NPN switch; internally connected to R1 (10 kΩ) to pin 6 (C2). |
| 6 (C2) | Collector of Transistor 2 | Output node for TR2; supports independent switching of second load with matched gain and timing to TR1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched transistors in one package | Guaranteed hFE tracking and VCE(sat) symmetry between TR1 and TR2 for balanced dual-channel logic translation. |
| Integrated 10 kΩ base bias resistor (R1) | Eliminates need for external pull-up/pull-down resistors; reduces component count and layout complexity in level-shifting interfaces. |
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces per stress test requirements. |
| Thermal resistance RthJS ≤ 140 K/W | Enables 250 mW total power dissipation at board temperature ≤ 115 °C; supports compact PCB layouts without forced air cooling. |
| SOT363 footprint compatibility | Standardized 2.1 × 2.0 mm outline with 0.65 mm pitch; compatible with automated pick-and-place and reflow processes per IPC-7351B. |
Applications
| Automotive Door Module Interface | Industrial PLC Input Stage |
|---|---|
Use Scenario: Driving window lift motor direction control signals from microcontroller GPIOs in door control units. IC Role / Device Role / Timing Role: Dual-channel level translator and current amplifier converting 3.3 V logic to 12 V/100 mA load drive capability. Use Value: Matched hFE and VCE(sat) ensure synchronized actuation of H-bridge half-bridges with <100 ns timing skew. | Use Scenario: Isolating and conditioning 24 V field sensor inputs (e.g., proximity switches) into 5 V logic levels for PLC CPU. IC Role / Device Role / Timing Role: Input buffer with built-in pull-up bias and ESD protection via integrated R1 network. Use Value: Eliminates 4 external resistors per channel, reducing BOM cost by $0.018/unit and saving 3.2 mm² PCB area per interface. |
| LED Driver for Dashboard Backlight | USB-C Power Path Control |
Use Scenario: PWM dimming control of white LED strings (3–5 V forward, 20–30 mA) in instrument cluster backlighting. IC Role / Device Role / Timing Role: High-speed saturated switch operating at 1–5 kHz PWM with minimal VCE(sat) drift over temperature. Use Value: VCE(sat) ≤ 0.3 V ensures <10 mW conduction loss per LED channel, maintaining thermal stability at 85 °C ambient. | Use Scenario: Enabling/disabling 5 V/3 A USB-C power delivery paths based on CC line detection in portable docking stations. IC Role / Device Role / Timing Role: Low-side enable switch controlling gate of external MOSFET in power path management circuit. Use Value: Integrated R1 provides clean turn-on/turn-off thresholds (Vi(on)/Vi(off)) immune to noise on 3.3 V control lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR129WH6327XTSA1 | SOT323 package (single transistor), Ptot = 250 mW, RthJS ≤ 105 K/W, no dual-transistor configuration | Single-channel use only; higher thermal performance but requires two devices for dual functionality | Select when space-constrained single-load switching is needed and dual matching is unnecessary |
| NSVD2101PT3G | ON Semiconductor SOT363 dual digital transistor; R1 = 4.7 kΩ, hFE = 100–400, not AEC-Q101 qualified | Lacks automotive qualification; suitable for commercial-grade industrial controls but not safety-critical modules | Select for cost-sensitive non-automotive applications where lower input threshold (Vi(on) = 0.35 V typ.) is advantageous |
Compared with BCR129SH6327XTSA1, the BCR129WH6327XTSA1 offers better thermal efficiency in single-channel designs, while the NSVD2101PT3G provides lower input threshold at the expense of automotive reliability validation and tighter hFE matching.
Availability
BCR129SH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and consumer appliance control boards requiring stable component supply and long-term lifecycle support.
Supply support for BCR129SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.
The BCR129S series belongs to Infineon's automotive-qualified digital transistor product line, engineered specifically for robust, space-efficient interface and switching functions in harsh-environment electronic control units.
FAQ
What is the maximum allowable continuous collector current for BCR129SH6327XTSA1?
The absolute maximum continuous collector current is 100 mA per transistor, as specified in the Absolute Maximum Ratings table. This rating assumes case temperature ≤ 115 °C and proper PCB copper pour for thermal dissipation. Exceeding this value risks thermal runaway or permanent degradation of hFE and VCE(sat).
Does BCR129SH6327XTSA1 require external base resistors for standard switching operation?
No. The device integrates a precision 10 kΩ base bias resistor (R1) between each base and its corresponding collector, enabling direct connection of microcontroller GPIOs to pins 1 (B1) and 5 (B2) without external components. This simplifies design and improves reliability in high-vibration environments.
How does the dual-transistor matching in BCR129SH6327XTSA1 benefit timing-critical applications?
Matched hFE, VCE(sat), and thermal characteristics between TR1 and TR2 ensure consistent turn-on/turn-off delays (<100 ns skew) across temperature and supply voltage variations. This enables precise phase alignment in dual-channel drivers such as H-bridge pre-drivers or differential signal translators.
Can BCR129SH6327XTSA1 be used in 5 V logic systems interfacing with 24 V loads?
Yes. With Vi(on) = 0.5–1.1 V and Vi(off) = 0.4–1 V, the device reliably switches on/off using standard 5 V TTL or CMOS logic outputs. Its 50 V VCEO rating safely isolates 24 V loads, and integrated R1 prevents latch-up during voltage transients on the base node.
BCR129SH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 150MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR129SH6327XTSA1 FAQ
1.How can I place an order for BCR129SH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR129SH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR129SH6327XTSA1 reliable?
The price and inventory of BCR129SH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR129SH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BCR129SH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR129SH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR129SH6327XTSA1?
BCR129SH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR129SH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR129SH6327XTSA1?
For technical support, including BCR129SH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR129SH6327XTSA1 requirements.
6.How does Aetrix verify that BCR129SH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BCR129SH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR129SH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BCR129SH6327XTSA1?
All BCR129SH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR129SH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR129SH6327XTSA1 part is unused and in its original packaging.
Return procedure for BCR129SH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR129SH6327XTSA1 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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