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Infineon Technologies BCR133SB6327XT
- Part No.:
- BCR133SB6327XT
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR133SB6327XT.pdf
- Description:
- TRANS 2NPN PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:8,368
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Product details
Overview
BCR133SB6327XT from Infineon Technologies is an NPN silicon digital transistor with two internally isolated, well-matched transistors in a single SOT363 package, featuring built-in bias resistors (R1 = R2 = 10 kΩ), VCEO = 50 V, IC = 100 mA, and VCE(sat) ≤ 0.3 V at IC = 10 mA / IB = 0.5 mA. It serves as a compact dual-channel level-shifting switch in automotive interface circuits and industrial logic buffers.
For engineers reviewing the BCR133SB6327XT datasheet, BCR133SB6327XT pinout, BCR133SB6327XT application, or BCR133SB6327XT equivalent, key selection criteria include its dual-transistor matching tolerance, guaranteed AEC-Q101 qualification, thermal resistance (RthJS ≤ 140 K/W), input voltage thresholds (Vi(on) = 1–2.5 V, Vi(off) = 0.8–1.5 V), and RoHS-compliant SOT363 packaging for space-constrained PCB layouts.
Technical Context
This device integrates two independent NPN digital transistors sharing no internal electrical connection-enabling true dual-channel isolation within one footprint. Each channel includes precision-matched 10 kΩ base bias resistors (R1/R2 ratio 0.9–1.1) and delivers consistent hFE ≥ 30 at IC = 5 mA / VCE = 5 V across temperature.
Designed for automotive-grade reliability, it operates over Tj = –65 °C to 150 °C, supports pulse loads up to Ptot(max)/Ptot(DC) = 0.5 at tp = 100 µs (D = 0), and exhibits fT = 130 MHz for high-speed switching in digital interface applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions |
| IC | 100 mA - Continuous collector current rating per transistor, defining drive capability for small-signal loads |
| VCE(sat) | ≤ 0.3 V at IC = 10 mA / IB = 0.5 mA - Ensures low conduction loss and minimal voltage drop in saturated switching |
| R1, R2 | 10 kΩ ±30% - Integrated base bias resistors eliminate external components for simplified inverter/switch design |
| fT | 130 MHz - Enables reliable operation in digital signal routing up to ~10 MHz clock domains |
| RthJS | ≤ 140 K/W - Thermal resistance from junction to soldering point, supporting 250 mW total dissipation at TS ≤ 115 °C |
| AEC-Q101 | Qualified - Validated for automotive electronics per stress test requirements including HTOL, TC, HTRB |
Pinout & Package
BCR133SB6327XT uses the SOT363 (SC-88) surface-mount package: six-pin, 1.3 mm × 2.1 mm × 0.95 mm body, gull-wing leads, RoHS-compliant matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B1) | Base of Transistor 1 | Input node for first transistor; connected internally to R1 and R2 forming bias network |
| 2 (E1) | Emitter of Transistor 1 | Common emitter reference for TR1; tied to ground or logic return path |
| 3 (C1) | Collector of Transistor 1 | Output node for TR1; drives load or next-stage input with low saturation voltage |
| 4 (E2) | Emitter of Transistor 2 | Independent emitter for second transistor; electrically isolated from E1 |
| 5 (B2) | Base of Transistor 2 | Input node for TR2; identical bias structure to B1, enabling matched switching behavior |
| 6 (C2) | Collector of Transistor 2 | Second independent output; allows dual-channel logic-level translation without cross-talk |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated transistors | Two fully independent NPN digital transistors in one SOT363 package, eliminating inter-channel coupling |
| Matched bias resistors | R1/R2 ratio tightly controlled (0.9–1.1), ensuring consistent turn-on thresholds between channels |
| Automotive qualification | AEC-Q101 qualified for under-hood and body-control module deployment |
| Thermal robustness | Rated for continuous operation up to Tj = 150 °C with derated power above TS = 115 °C |
| Low-input-threshold logic compatibility | Vi(on) = 1–2.5 V enables direct interfacing with 1.8 V, 3.3 V, and 5 V CMOS/TTL outputs |
Applications
| Automotive Body Control Module | Industrial PLC Input Interface |
|---|---|
Use Scenario: Level-shifting and isolation of 12 V sensor signals to 3.3 V microcontroller GPIO inputs in door module ECUs. IC Role / Device Role / Timing Role: Dual-channel digital switch providing galvanically isolated signal conditioning with matched propagation delay. Use Value: Eliminates need for two discrete transistors and four external resistors, reducing BOM count and PCB area by >40%. | Use Scenario: Converting 24 V DC field signals into clean 5 V logic levels for programmable logic controller (PLC) input cards. IC Role / Device Role / Timing Role: High-voltage tolerant interface buffer with built-in pull-up/pull-down biasing for noise-immune digital acquisition. Use Value: Withstands transient surges up to 40 V input reverse voltage and maintains stable Vi(off) ≤ 1.5 V for reliable false-trigger immunity. |
| Consumer Appliance Motor Driver Logic | Medical Diagnostic Equipment Signal Conditioning |
Use Scenario: Driving half-bridge gate control logic in smart appliance motor inverters where space and thermal margin are constrained. IC Role / Device Role / Timing Role: Dual-output inverter stage translating MCU PWM outputs to isolated high-side/low-side gate drivers. Use Value: Matched hFE and VCE(sat) ensure symmetrical rise/fall timing, minimizing shoot-through risk in bridge configurations. | Use Scenario: Isolating analog front-end trigger lines from digital processing units in portable ultrasound devices. IC Role / Device Role / Timing Role: Low-capacitance (Ccb = 3 pF) digital isolator preserving signal edge integrity for precise timing-critical triggers. Use Value: 130 MHz fT supports sub-10 ns pulse fidelity required for time-of-flight measurement synchronization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR143SB6327XT | VCEO = 60 V, R1 = 47 kΩ, R2 = 47 kΩ - higher voltage rating but weaker drive strength (hFE min = 20) | Better suited for 24 V industrial bus interfaces; less optimal for 5 V logic-level translation due to higher Vi(on) | Select when system supply exceeds 50 V or higher input impedance is needed. |
| NSVD2001MXV6T1G | Single-channel, R1 = 10 kΩ only, no R2 - lacks dual-isolation and resistor ratio matching | Requires external resistor for emitter termination; unsuitable for matched dual-channel timing-critical use cases | Choose only for cost-sensitive single-switch applications where channel matching is irrelevant. |
Compared with BCR133SB6327XT, BCR143SB6327XT trades drive capability for higher voltage tolerance, while NSVD2001MXV6T1G sacrifices dual-channel integration and matching for lower unit cost-making BCR133SB6327XT the optimal choice for space-constrained, thermally demanding, and timing-sensitive dual-switch designs.
Availability
BCR133SB6327XT is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input interfaces, and medical diagnostic equipment requiring stable component supply and long-term lifecycle support.
Supply support for BCR133SB6327XT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.
BCR133SB6327XT belongs to Infineon's BCR series of digital transistors-designed specifically for automotive-grade signal interface, logic-level translation, and compact dual-channel switching in harsh-environment embedded systems.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature (Tj) is 150 °C. Operation must remain within this limit under all conditions, with power derating applied above case temperature (TS) = 115 °C per the Ptot vs. TS curve-ensuring safe thermal margin in sealed enclosures or high-ambient environments.
Can BCR133SB6327XT replace discrete BJT + resistor combinations in new designs?
Yes-it replaces two NPN BJTs plus four external bias resistors in dual-channel configurations. Its integrated R1/R2 network matches typical 10 kΩ values used in standard TTL/CMOS interface designs, reducing layout complexity and improving channel-to-channel consistency without sacrificing performance.
Is the SOT363 package compatible with standard reflow profiles for lead-free assembly?
Yes-the SOT363 package is RoHS-compliant and qualified for standard Pb-free reflow processes (J-STD-020D). Peak temperature must not exceed 260 °C for ≤ 30 seconds, and thermal profile must respect the device's RthJS ≤ 140 K/W to avoid solder joint fatigue or junction overheating during assembly.
How does the dual-transistor matching benefit timing-critical applications?
Matched hFE, VCE(sat), and input thresholds (Vi(on)/Vi(off)) ensure near-identical propagation delays and switching edges between channels-critical for synchronous signal routing in motor control commutation, encoder decoding, and dual-edge triggered logic where skew must stay below 5 ns.
BCR133SB6327XT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 130MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR133SB6327XT FAQ
1.How can I place an order for BCR133SB6327XT through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR133SB6327XT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR133SB6327XT reliable?
The price and inventory of BCR133SB6327XT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR133SB6327XT is usually 5 days.
3.What payment methods are accepted for BCR133SB6327XT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR133SB6327XT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR133SB6327XT?
BCR133SB6327XT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR133SB6327XT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR133SB6327XT?
For technical support, including BCR133SB6327XT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR133SB6327XT requirements.
6.How does Aetrix verify that BCR133SB6327XT is sourced from the original manufacturer or authorized distributors?
All BCR133SB6327XT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR133SB6327XT meets industry standards.
7.What is the process for return or replacement of BCR133SB6327XT?
All BCR133SB6327XT units undergo pre-shipment inspection (PSI). If there is an issue with BCR133SB6327XT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR133SB6327XT part is unused and in its original packaging.
Return procedure for BCR133SB6327XT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR133SB6327XT Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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