Infineon Technologies BCR133SE6327BTSA1

Overview

BCR133SE6327BTSA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for switching, inverting, interfacing, and driver functions in automotive and industrial control circuits. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C/I_B = 20, h_FE ≥ 30, and AEC-Q101 qualification.

For engineers reviewing the BCR133SE6327BTSA1 datasheet, BCR133SE6327BTSA1 pinout, BCR133SE6327BTSA1 application, or BCR133SE6327BTSA1 equivalent, key selection criteria include input threshold voltage (V_i(on) = 1–2.5 V), off-state leakage (V_i(off) = 0.8–1.5 V), thermal resistance (R_thJS ≤ 140 K/W), dual-transistor matching, and SOT363 package compatibility.

Technical Context

This device integrates two matched NPN transistors in a single SOT363 package, sharing no internal electrical connection between channels-enabling independent switching paths with consistent gain and saturation behavior across temperature. Its built-in R1/R2 bias network eliminates external base resistors, reducing PCB footprint and improving layout reliability for level-shifting and logic interface tasks.

The transistor operates with guaranteed DC current gain (h_FE ≥ 30 at I_C = 5 mA, V_CE = 5 V) and low saturation voltage (V_CE(sat) ≤ 0.3 V), supporting fast switching up to f_T = 130 MHz while maintaining robust thermal performance (T_j = 150 °C max, P_tot = 250 mW at T_S ≤ 115 °C).

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin surface-mount package with dual isolated NPN transistors. Pin 1 = B1, Pin 2 = E1, Pin 3 = C2, Pin 4 = E2, Pin 5 = B2, Pin 6 = C1. Marking "EHA" identifies BCR133S variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor switching applications.

Compared with BCR133SE6327BTSA1, the BCR133W offers half the channel count in a smaller package but sacrifices matching and dual functionality; the NSVD2101PT3G provides identical single-transistor specs without AEC-Q101 validation or dual-channel integration-making BCR133SE6327BTSA1 uniquely suited for space-constrained, safety-critical dual-switching roles.

Availability

BCR133SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and medical diagnostic equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for BCR133SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete components, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BCR133S series belongs to Infineon's automotive-qualified digital transistor family, engineered specifically for reliable, resistor-equipped switching in space-constrained control modules and interface circuits.

FAQ

What is the maximum operating temperature for BCR133SE6327BTSA1?

The junction temperature (T_j) is rated up to 150 °C, and the device sustains full 250 mW power dissipation up to a case/solder-point temperature (T_S) of 115 °C. Derating begins above that point per the published P_tot vs. T_S curve, with thermal resistance R_thJS ≤ 140 K/W ensuring predictable thermal behavior in SOT363 layouts.

Can BCR133SE6327BTSA1 replace a standard BJT like BC847 in a switching circuit?

Yes-but only if the circuit relies on base biasing through external resistors. BCR133SE6327BTSA1 integrates R1 and R2, so replacing a discrete BJT requires removing those resistors and verifying Vi(on)/Vi(off) thresholds match the driving source. It is not a drop-in replacement for unbiasable transistors without schematic modification.

Is the dual-transistor structure internally connected or fully isolated?

The two NPN transistors in BCR133SE6327BTSA1 are fully electrically isolated-no shared emitter, collector, or base connections exist between them. Pin assignments (B1/E1/C1 and B2/E2/C2) confirm independent terminals, enabling true dual-channel operation without crosstalk or shared current paths.

Does BCR133SE6327BTSA1 support PWM switching at 20 kHz?

Yes. With f_T = 130 MHz and V_CE(sat) ≤ 0.3 V, the device supports clean 20 kHz PWM switching for motor and LED dimming. Rise/fall times are sub-10 ns under typical conditions, and the integrated bias network ensures consistent turn-on/turn-off thresholds across temperature and supply variation.