Infineon Technologies BCR133SH6327XTSA1

Overview

BCR133SH6327XTSA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for switching, inverter, interface, and driver circuits in automotive and industrial control systems. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C/I_B = 20, h_FE ≥ 30, and AEC-Q101 qualification.

For engineers reviewing the BCR133SH6327XTSA1 datasheet, BCR133SH6327XTSA1 pinout, BCR133SH6327XTSA1 application, or BCR133SH6327XTSA1 equivalent, key selection criteria include input threshold voltage (V_i(on) = 1–2.5 V), built-in resistor matching (R1/R2 = 0.9–1.1), thermal resistance (R_thJS ≤ 140 K/W), and SOT363 package compatibility with high-density PCB layouts.

Technical Context

This dual-transistor device integrates two electrically isolated NPN transistors in a single SOT363 package with matched characteristics-enabling precise current mirroring and differential switching. Each channel includes monolithically integrated base-emitter bias resistors (R1 = R2 = 10 kΩ) to eliminate external components and ensure consistent turn-on behavior.

It operates across –65 °C to +150 °C junction temperature, supports pulse loads up to 300 mW at T_S ≤ 115 °C, and delivers f_T = 130 MHz for moderate-speed digital switching applications such as level translation and logic interfacing in automotive body electronics.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin surface-mount package with dual NPN topology and pin 1 = B1, pin 2 = E1, pin 3 = C2, pin 4 = E2, pin 5 = B2, pin 6 = C1 - enabling independent or complementary switching of two matched transistors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BCR133SH6327XTSA1, BCR143SH6327XTSA1 offers higher voltage tolerance but lower gain consistency, while NSVD120DP033T1G reduces integration density and eliminates transistor matching-making the BCR133S optimal for dual-channel precision switching in AEC-Q101-compliant designs.

Availability

BCR133SH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial programmable logic controllers, and USB power management systems requiring stable component supply, long-lifecycle assurance, and AEC-Q101 compliance.

Supply support for BCR133SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in AEC-Q101-qualified discrete devices.

The BCR133S series belongs to Infineon's automotive-qualified digital transistor family, engineered specifically for robust, space-efficient switching in harsh-environment control units and interface circuits.

FAQ

What is the maximum continuous collector current for BCR133SH6327XTSA1?

The maximum continuous collector current is 100 mA per transistor channel, specified at case temperature T_S ≤ 115 °C. Derating applies above this temperature, with total power dissipation dropping to 250 mW at T_S = 115 °C and decreasing linearly to zero at 150 °C junction temperature.

Is BCR133SH6327XTSA1 pin-compatible with standard SOT363 NPN transistors?

No-it uses a proprietary dual-transistor pinout (1=B1, 2=E1, 3=C2, 4=E2, 5=B2, 6=C1) distinct from single-transistor SOT363 parts like BC846. Direct replacement requires schematic and layout revision to accommodate the mirrored dual-emitter configuration and internal resistor topology.

Does BCR133SH6327XTSA1 support PWM switching at 20 kHz?

Yes-its 130 MHz transition frequency and 3 pF collector-base capacitance enable clean 20 kHz PWM operation with minimal switching loss and rise/fall times under 50 ns. Verified performance data shows stable V_CE(sat) ≤ 0.3 V and no thermal runaway at 100 mA, 20 kHz duty cycles up to 50%.

How does the built-in resistor ratio affect circuit design?

The R1/R2 ratio of 0.9–1.1 ensures matched base drive across both transistors, critical for differential pair operation and current mirror accuracy. This eliminates manual trimming and maintains <±5% current mismatch over temperature, directly improving signal fidelity in analog-digital interface circuits.