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Infineon Technologies BCR133SH6433XTMA1
- Part No.:
- BCR133SH6433XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR133SH6433XTMA1.pdf
- Description:
- TRANS 2NPN PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:7,927
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Product details
Overview
BCR133SH6433XTMA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for low-power switching in interface, inverter, and driver circuits. It supports 50 V VCEO, 100 mA IC, 0.3 V VCE(sat) at IC/IB = 20, operates up to 150 °C junction temperature, and is AEC-Q101 qualified for automotive applications.
For engineers reviewing the BCR133SH6433XTMA1 datasheet, BCR133SH6433XTMA1 pinout, BCR133SH6433XTMA1 application, or BCR133SH6433XTMA1 equivalent, key selection criteria include built-in resistor matching, thermal resistance (RthJS ≤ 140 K/W), SOT363 package footprint, and guaranteed Vi(on)/Vi(off) thresholds for reliable logic-level interfacing.
Technical Context
This dual-digital-transistor device integrates two electrically isolated NPN transistors with matched hFE and resistor values in a single SOT363 package. Its internal 10 kΩ–10 kΩ bias network eliminates external base resistors, enabling direct TTL/CMOS-level drive without additional components.
The device operates in common-emitter switching mode with guaranteed VCE(sat) ≤ 0.3 V at IC = 10 mA and IB = 0.5 mA, and exhibits fT = 130 MHz for moderate-speed digital signal routing. Thermal derating follows Ptot = 250 mW at TS ≤ 115 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive and industrial control rails. |
| IC | 100 mA - Continuous collector current rating; sufficient for LED drivers, relay coils, and small-signal logic buffers. |
| VCE(sat) | ≤ 0.3 V at IC/IB = 20 - Low saturation voltage minimizes power loss and self-heating in high-duty-cycle switching. |
| R1 / R2 | 10 kΩ ±30% - Matched on-chip base bias resistors eliminate external components and ensure consistent turn-on behavior across temperature. |
| fT | 130 MHz - Transition frequency supports clean edge response up to ~10–20 MHz digital switching without added ringing. |
| AEC-Q101 | Qualified - Meets stress-test requirements for automotive electronics, including temperature cycling and HTRB. |
| RthJS | ≤ 140 K/W - Junction-to-solder-point thermal resistance enables stable operation at 115 °C substrate temperature with 250 mW dissipation. |
Pinout & Package
SOT363 (SC-88) 6-pin surface-mount package with dual-transistor layout and exposed thermal pad. Pin 1 = B1, Pin 2 = E1, Pin 3 = C2, Pin 4 = E2, Pin 5 = B2, Pin 6 = C1 - fully isolated emitter and collector terminals per transistor.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B1) | Base of Transistor 1 | Input node for first NPN switch; internally connected to R1 and R2 network. |
| 2 (E1) | Emitter of Transistor 1 | Common emitter reference for TR1; electrically isolated from E2. |
| 3 (C2) | Collector of Transistor 2 | Output node for second NPN switch; independent of C1 path. |
| 4 (E2) | Emitter of Transistor 2 | Common emitter reference for TR2; isolated from E1 to support differential or dual-rail configurations. |
| 5 (B2) | Base of Transistor 2 | Input node for second NPN switch; shares same R1/R2 ratio as B1 but separate bias path. |
| 6 (C1) | Collector of Transistor 1 | Output node for first NPN switch; supports independent load connection from C2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched transistors | Two isolated NPNs with tightly controlled hFE and R1/R2 ratio (0.9–1.1), enabling precise current mirroring or complementary switching. |
| Integrated bias network | On-die 10 kΩ pull-up (R1) and pull-down (R2) resistors reduce PCB component count and improve layout repeatability. |
| AEC-Q101 qualification | Validated for automotive under-hood environments including 1000-hr HTOL, temperature cycling, and ESD robustness (HBM ≥ 2 kV). |
| Low VCE(sat) | Guaranteed ≤ 0.3 V ensures <10 mW conduction loss at 10 mA, critical for battery-powered sensor interfaces. |
Applications
| Automotive Door Module | Industrial PLC Input Stage |
|---|---|
Use Scenario: Level-shifting and isolation of door lock actuator signals from microcontroller GPIOs. IC Role / Device Role / Timing Role: Digital switch translating 3.3 V logic to 12 V load control with built-in noise immunity. Use Value: Eliminates discrete resistor networks and reduces board area by >40% versus dual-transistor + 4-resistor solution. | Use Scenario: Optocoupler replacement in 24 V DC input modules for programmable logic controllers. IC Role / Device Role / Timing Role: High-impedance, low-leakage interface between field wiring and FPGA/CPLD I/O banks. Use Value: Enables direct connection to 24 V sensors with Vi(off) ≤ 1.5 V and IEBO ≤ 0.75 mA, reducing false-trigger risk. |
| USB-C Power Delivery Interface | Smart Home Sensor Hub |
Use Scenario: Enabling/disabling USB-C CC line termination resistors based on port orientation detection. IC Role / Device Role / Timing Role: Fast-switching logic-controlled analog switch with sub-100 ns turn-on time. Use Value: Supports USB PD 3.0 specification timing with fT = 130 MHz and Vi(on) = 1–2.5 V compatible with MCU GPIO thresholds. | Use Scenario: Driving multiple low-current status LEDs (red/green/blue) from a single 3.3 V MCU port. IC Role / Device Role / Timing Role: Dual-channel LED driver with independent enable control and current-limiting via VCE(sat). Use Value: Delivers consistent brightness across channels using matched hFE and eliminates need for external current-setting resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR143SH6433XTMA1 | Same SOT363 package, higher hFE (min 160 vs. 30), identical R1/R2 (10 kΩ), VCEO = 50 V. | Better suited for low-drive-strength MCUs where IB < 0.2 mA is required. | Select when higher current gain is needed without changing layout or thermal design. |
| NSVD2101PT3G | Single-channel SOT23-3, R1 = 4.7 kΩ, R2 = 4.7 kΩ, VCEO = 50 V, AEC-Q101 qualified. | Lacks dual-transistor integration; requires two devices for same functionality. | Choose only if space allows duplication or if single-channel operation suffices. |
Compared with BCR133SH6433XTMA1, BCR143SH6433XTMA1 offers higher gain for marginal drive conditions, while NSVD2101PT3G trades integration for lower unit cost and simpler inventory-neither provides identical dual-isolated functionality in one package.
Availability
BCR133SH6433XTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial I/O modules, and smart home sensor interfaces requiring stable component supply, AEC-Q101 compliance, and SMT manufacturability.
Supply support for BCR133SH6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.
This part belongs to Infineon's BCRx family of digital transistors, engineered specifically for replacing discrete BJT + resistor combinations in automotive and industrial control nodes where space, reliability, and qualification are critical.
FAQ
What is the maximum operating temperature for BCR133SH6433XTMA1?
The junction temperature limit is 150 °C, and the device delivers full-rated 250 mW power dissipation up to a substrate temperature (TS) of 115 °C. Derating begins linearly beyond that point, reaching zero power at 150 °C TS, per the Ptot vs. TS curve in the datasheet Figure 5.
Can BCR133SH6433XTMA1 replace a standard BJT like BC847 in existing designs?
Yes-but only if the circuit relies on external base resistors. The BCR133SH6433XTMA1 integrates R1 and R2, so removing those external components is mandatory. Also verify that the dual-transistor topology matches the original single-BJT function; mismatched pinouts or channel coupling may require layout revision.
Is the SOT363 package lead-free and RoHS compliant?
Yes. The device uses a Pb-free (RoHS-compliant) finish on all terminations and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60% RH without dry-pack requirements.
How does the built-in resistor ratio affect switching performance?
The R1/R2 ratio of 0.9–1.1 ensures balanced turn-on/turn-off thresholds, minimizing propagation delay skew between the two transistors. This tight matching maintains timing integrity in dual-edge-triggered or differential-sensing applications, especially over –40 °C to 125 °C.
BCR133SH6433XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 130MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR133SH6433XTMA1 FAQ
1.How can I place an order for BCR133SH6433XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR133SH6433XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR133SH6433XTMA1 reliable?
The price and inventory of BCR133SH6433XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR133SH6433XTMA1 is usually 5 days.
3.What payment methods are accepted for BCR133SH6433XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR133SH6433XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR133SH6433XTMA1?
BCR133SH6433XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR133SH6433XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR133SH6433XTMA1?
For technical support, including BCR133SH6433XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR133SH6433XTMA1 requirements.
6.How does Aetrix verify that BCR133SH6433XTMA1 is sourced from the original manufacturer or authorized distributors?
All BCR133SH6433XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR133SH6433XTMA1 meets industry standards.
7.What is the process for return or replacement of BCR133SH6433XTMA1?
All BCR133SH6433XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR133SH6433XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR133SH6433XTMA1 part is unused and in its original packaging.
Return procedure for BCR133SH6433XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR133SH6433XTMA1 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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