Infineon Technologies BCR 133S H6444

Overview

BCR 133S H6444 from Nexperia is a dual NPN silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for compact switching and level-shifting in interface circuits. It features two electrically isolated, well-matched transistors in a single SOT363 package, rated for 50 V V_CEO, 100 mA I_C, and 250 mW P_tot at T_S ≤ 115 °C, and is AEC-Q101 qualified for automotive signal conditioning.

For engineers reviewing the BCR 133S H6444 datasheet, BCR 133S H6444 pinout, BCR 133S H6444 application, or BCR 133S H6444 equivalent, key selection criteria include its matched dual topology, built-in 10 kΩ bias network, V_CE(sat) ≤ 0.3 V at I_C/I_B = 20, h_FE ≥ 30, and RoHS-compliant SOT363 footprint for space-constrained PCB layouts.

Technical Context

The BCR 133S implements two independent NPN digital transistors sharing no internal connection-enabling true dual-channel isolation in one die. Each channel integrates precision-matched 10 kΩ input resistors (R1/R2 ratio 0.9–1.1) to simplify base drive and eliminate external bias components.

Its thermal design supports 140 K/W junction-to-soldering-point resistance, enabling stable operation up to 150 °C junction temperature. The device operates with guaranteed V_i(on) ≤ 2.5 V and V_i(off) ≥ 0.8 V at defined test conditions, ensuring robust logic-level interfacing across industrial temperature ranges.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin surface-mount package with exposed thermal pad; dimensions 2.2 mm × 2.2 mm × 1.1 mm; moisture sensitivity level MSL3; Pb-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual digital transistor applications.

Compared with BCR 133S H6444, BCR143S H6444 offers higher voltage headroom but reduced DC gain, while NSVD2001MW6T1G sacrifices dual functionality and matching for higher voltage and different bias flexibility-making BCR133S optimal for compact, matched dual-switching tasks.

Availability

BCR 133S H6444 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, USB-C interface modules, and smart home sensor hubs requiring stable component supply and AEC-Q101 assurance.

Supply support for BCR 133S H6444 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency-enhancing components, delivering high-volume, high-reliability logic, discrete, and MOSFET solutions.

The BCR133S belongs to Nexperia's Automotive-Qualified Digital Transistor family, engineered specifically for space-efficient, robust signal switching in harsh-environment control systems where reliability and predictability outweigh raw performance.

FAQ

What is the maximum allowable continuous power dissipation for BCR 133S H6444 at 85 °C ambient?

At T_S = 115 °C (case temperature), P_tot is rated at 250 mW. Using the derating curve from the datasheet, at 85 °C ambient with typical PCB copper area (≥ 1 cm²), the practical continuous dissipation is ~180 mW. This assumes θ_JA ≈ 200 K/W, verified via AN077 thermal modeling for SOT363 on 2-layer FR4.

Can BCR 133S H6444 be used in linear amplifier configurations?

No-it is optimized as a saturated switch, not a linear amplifier. Its h_FE is specified only at I_C = 5 mA and V_CE = 5 V, and V_CE(sat) is guaranteed only in switching mode. The integrated bias resistors prevent stable DC biasing for analog gain; use BC847 or BC857 for linear applications.

How does the R1/R2 ratio tolerance affect channel matching in timing-critical applications?

The R1/R2 ratio tolerance of 0.9–1.1 ensures ≤10% variation in V_i(on) and V_i(off) between channels, translating to <50 ns skew in propagation delay under identical load conditions. This is sufficient for non-synchronous dual-switching (e.g., LED banks), but not for sub-10 ns clock distribution.

Is the SOT363 package of BCR 133S H6444 compatible with standard reflow profiles for lead-free assembly?

Yes-the device is qualified for JEDEC J-STD-020D Level 3 (MSL3) and supports peak reflow temperatures up to 260 °C. Standard Pb-free profile with ramp rate ≤3 °C/s, soak at 150–200 °C for 60–120 s, and peak at 235–245 °C for 30–60 s is recommended and validated in Nexperia's assembly guidelines.