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Infineon Technologies BCR135SE6327BTSA1
- Part No.:
- BCR135SE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR135SE6327BTSA1.pdf
- Description:
- TRANS 2NPN PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:7,016
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Product details
Overview
BCR135SE6327BTSA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 10 kΩ, R2 = 47 kΩ), designed for switching, inverting, and interface driver functions in automotive and industrial control circuits. It features VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, hFE ≥ 70, and AEC-Q101 qualification.
For engineers reviewing the BCR135SE6327BTSA1 datasheet, BCR135SE6327BTSA1 pinout, BCR135SE6327BTSA1 application, or BCR135SE6327BTSA1 equivalent, this part serves as a pre-biased dual-transistor solution in SOT363 package for space-constrained logic-level interfacing, LED load switching, and automotive body electronics where matched gain and thermal stability across two transistors are required.
Technical Context
This device integrates two electrically isolated NPN transistors in a single SOT363 package with tightly matched characteristics-enabling differential signaling, push-pull output stages, or redundant switching paths. Each transistor includes monolithic base-emitter bias resistors (R1/R2 = ~0.21) to eliminate external bias components and ensure consistent turn-on/turn-off behavior.
It operates over −40 °C to +125 °C junction temperature, supports pulse loads up to 300 mW at low duty cycles, and delivers fT = 150 MHz for high-speed digital switching applications requiring fast edge response and low propagation delay.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive supply rails with margin. |
| IC | 100 mA - Continuous collector current rating; suitable for driving LEDs, small relays, and logic buffers. |
| VCE(sat) | ≤ 0.3 V @ IC/IB = 20 - Low saturation voltage minimizes power loss and self-heating in switching mode. |
| hFE | ≥ 70 @ IC = 5 mA - Guaranteed DC current gain ensures reliable digital on/off operation without marginal biasing. |
| R1 / R2 | 10 kΩ / 47 kΩ - Integrated bias network eliminates external resistors and improves board layout density. |
| fT | 150 MHz - Transition frequency supports >10 MHz digital signal switching with minimal rise/fall time degradation. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronic components including temperature cycling and HTRB. |
Pinout & Package
BCR135SE6327BTSA1 is housed in a RoHS-compliant SOT363 (SC-88) surface-mount package measuring 2.13 mm × 1.25 mm × 0.95 mm, optimized for automated placement and reflow soldering in high-volume automotive PCB assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 = B1 | Base of Transistor 1 | Input node for first transistor; connected internally to R1 and R2 network for self-biasing. |
| 2 = E1 | Emitter of Transistor 1 | Common emitter reference for TR1; tied to ground or low-side return path in switch configuration. |
| 3 = C2 | Collector of Transistor 2 | Output node for second transistor; used for active pull-down or complementary output stage. |
| 4 = E2 | Emitter of Transistor 2 | Common emitter reference for TR2; electrically isolated from E1 but same potential in typical dual-emitter configurations. |
| 5 = B2 | Base of Transistor 2 | Input node for second transistor; independently controllable for differential or mirrored switching. |
| 6 = C1 | Collector of Transistor 1 | Primary output node for TR1; configured as open-collector switch in interface applications. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated NPN transistors | Two matched, independent switching elements in one SOT363 footprint-reduces component count and layout area by 50% vs discrete pairs. |
| Monolithic bias resistors | R1 = 10 kΩ ±30%, R2 = 47 kΩ ±30%; eliminates external biasing components and improves thermal tracking between base drive paths. |
| AEC-Q101 qualified | Validated for automotive under-hood and body control modules per stress test requirements including HTSL, TC, and HTRB. |
| Thermal derating support | Ptot = 250 mW at TS ≤ 115 °C; enables stable operation in compact enclosures with limited airflow. |
Applications
| Automotive Body Control Module | Industrial PLC Input Interface |
|---|---|
Use Scenario: Driving multiple LED status indicators and solenoid valves from microcontroller GPIO pins in door module ECUs. IC Role / Device Role / Timing Role: Dual-channel level-shifting and current amplification switch; replaces two discrete BJT+resistor networks. Use Value: Reduces BOM count by two transistors and four resistors per channel while maintaining AEC-Q101 compliance and thermal matching. | Use Scenario: Converting 24 V industrial sensor signals to 3.3 V/5 V logic levels for FPGA or ARM-based controller inputs. IC Role / Device Role / Timing Role: High-impedance input buffer with built-in pull-up/pull-down biasing for noise-immune signal conditioning. Use Value: Enables direct connection of dry-contact or PNP sensors without external bias resistors or level translators. |
| USB-C Power Delivery Sequencing | Smart Lighting Driver Control |
Use Scenario: Enabling/disabling auxiliary power rails during USB PD negotiation using MCU-controlled enable signals. IC Role / Device Role / Timing Role: Low-side switch controlling gate of external MOSFET or enable pin of buck converter IC. Use Value: Fast VCE(sat) ≤ 0.3 V and fT = 150 MHz allow sub-microsecond switching transitions critical for PD timing compliance. | Use Scenario: Dimming and fault isolation for multi-zone LED arrays in architectural lighting systems. IC Role / Device Role / Timing Role: Dual-channel current sink for PWM-controlled LED strings with independent channel enable/disable. Use Value: Matched hFE and thermal coupling between TR1/TR2 ensure uniform brightness and synchronized dimming response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR148SE6327XTSA1 | Higher VCEO = 60 V; same R1/R2 values; identical SOT363 package. | Preferred in 48 V battery systems or higher-voltage industrial controls where 50 V margin is insufficient. | Select when operating above 40 V supply rails; otherwise BCR135S offers optimal cost/performance balance. |
| NSVD120DP033T1G | Single-channel only; R1 = 4.7 kΩ, R2 = 47 kΩ; SOT23 package; no AEC-Q101 qualification. | Used in non-automotive consumer or white goods applications where dual-channel integration is not required. | Choose for cost-sensitive, single-switch designs without automotive reliability requirements. |
Compared with BCR148SE6327XTSA1 and NSVD120DP033T1G, BCR135SE6327BTSA1 uniquely balances dual-channel integration, AEC-Q101 qualification, and 50 V robustness-making it optimal for space-constrained automotive body electronics where matched transistor performance and reliability are mandatory.
Availability
BCR135SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input interfaces, USB-C power delivery sequencing, and smart lighting driver control requiring stable component supply and long-term lifecycle support.
Supply support for BCR135SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.
BCR135SE6327BTSA1 belongs to Infineon's BCR series of digital transistors-designed specifically for automotive-grade switching and interface applications requiring integrated biasing, thermal stability, and AEC-Q101 compliance.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature (Tj) is 150 °C. Derating begins at case temperature (TS) > 115 °C, where total power dissipation drops linearly from 250 mW to zero at 150 °C. Operation beyond this limit risks permanent parametric shift or bond wire failure.
Can BCR135SE6327BTSA1 be used as a direct replacement for discrete BJT + resistor combinations?
Yes-it replaces two NPN BJTs plus four external bias resistors in dual-switch configurations. Pin compatibility requires verifying layout alignment with SOT363 footprint and confirming that E1/E2 are either tied together or kept separate per circuit topology; no additional passive components are needed for basic switching.
Is the internal resistor ratio R1/R2 stable across temperature and process variation?
Yes-the monolithic R1/R2 ratio is specified as 0.19–0.24 over −40 °C to +125 °C, ensuring consistent input threshold behavior across automotive temperature ranges. This tight ratio tolerance maintains predictable Vi(on)/Vi(off) margins without external trimming.
Does this part support pulsed operation beyond its DC power rating?
Yes-pulse power capability follows the Ptot(max)/Ptot(DC) vs. pulse width (tp) curve, reaching up to 3× DC rating for tp < 10 µs at D = 0. Thermal resistance RthJS ≤ 140 K/W enables short bursts up to 750 mW without exceeding Tj = 150 °C.
BCR135SE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 150MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR135SE6327BTSA1 FAQ
1.How can I place an order for BCR135SE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR135SE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR135SE6327BTSA1 reliable?
The price and inventory of BCR135SE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR135SE6327BTSA1 is usually 5 days.
3.What payment methods are accepted for BCR135SE6327BTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR135SE6327BTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR135SE6327BTSA1?
BCR135SE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR135SE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR135SE6327BTSA1?
For technical support, including BCR135SE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR135SE6327BTSA1 requirements.
6.How does Aetrix verify that BCR135SE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BCR135SE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR135SE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BCR135SE6327BTSA1?
All BCR135SE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR135SE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR135SE6327BTSA1 part is unused and in its original packaging.
Return procedure for BCR135SE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR135SE6327BTSA1 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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