Infineon Technologies BCR135SH6827XTSA1

Overview

BCR135SH6827XTSA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 10 kΩ, R2 = 47 kΩ), designed for switching, inverting, and interface driver functions in automotive and industrial control circuits. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, and AEC-Q101 qualification for under-hood applications.

For engineers reviewing the BCR135SH6827XTSA1 datasheet, BCR135SH6827XTSA1 pinout, BCR135SH6827XTSA1 application, or BCR135SH6827XTSA1 equivalent, key selection criteria include built-in resistor ratio (R1/R2 = 0.21 typ.), thermal resistance (R_thJS ≤ 140 K/W), junction temperature rating (T_j = 150 °C), and SOT363 package compatibility with high-density PCB layouts.

Technical Context

This dual-transistor device integrates two electrically isolated NPN transistors with matched characteristics in a single SOT363 package-enabling compact push-pull or complementary switching without external bias networks. Its internal R1–R2 network sets fixed base drive conditions, eliminating discrete resistor placement while maintaining stable turn-on/off thresholds across temperature.

The device operates in common-emitter configuration with guaranteed h_FE ≥ 70 at I_C = 5 mA/V_CE = 5 V and supports AC signal amplification up to f_T = 150 MHz. Input voltage thresholds (V_i(on) ≤ 1.4 V, V_i(off) ≥ 0.5 V) ensure robust logic-level interfacing with microcontrollers and FPGA I/Os.

Key Specifications

Pinout & Package

BCR135SH6827XTSA1 is housed in a RoHS-compliant SOT363 (SC-88) surface-mount package with six terminals and dual-transistor layout. The package measures 2.13 mm × 1.25 mm × 1.0 mm and supports tape-and-reel delivery (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BCR142SH6327XTSA1 and NSVD2101PT3G, BCR135SH6827XTSA1 uniquely balances dual-channel integration, AEC-Q101 compliance, and optimized R1/R2 ratio for 24 V automotive logic interfacing-making it irreplaceable in safety-critical dual-output modules.

Availability

BCR135SH6827XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, and LED backlight drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BCR135SH6827XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification aligned to ISO/TS 16949.

BCR135SH6827XTSA1 belongs to Infineon's BCRx family of digital transistors-designed specifically for replacing discrete BJT + resistor combinations in automotive signal conditioning and interface applications.

FAQ

What is the maximum continuous collector current for BCR135SH6827XTSA1?

The maximum continuous collector current is 100 mA per transistor, specified at T_S ≤ 115 °C for the SOT363 package. Derating applies above this case temperature, with total power dissipation dropping linearly to zero at 150 °C junction temperature. Pulse operation allows higher peak currents if duty cycle and pulse width remain within permissible limits defined in the datasheet's R_thJS(t_p) curves.

Does BCR135SH6827XTSA1 support direct connection to 3.3 V microcontroller GPIOs?

Yes-its V_i(on) ≤ 1.4 V (typ.) and V_i(off) ≥ 0.5 V (min.) ensure reliable turn-on with standard 3.3 V CMOS logic outputs. The internal R1–R2 network draws ~0.33 mA from the GPIO at 3.3 V, well within typical MCU drive capability. No level-shifter or external pull-up is required for basic switching operation.

How does the dual-transistor structure improve design reliability compared to discrete solutions?

The monolithic dual-die construction ensures matched thermal coefficients, identical h_FE drift, and sub-nanosecond propagation skew between channels-critical for balanced push-pull drivers and fault-tolerant redundancy circuits. Unlike discrete assemblies, there is no risk of resistor value mismatch or layout-induced parasitic imbalance, reducing validation time and field failure modes.

Is lead-free soldering compatible with the SOT363 package of BCR135SH6827XTSA1?

Yes-the device uses a Pb-free (RoHS-compliant) finish and is qualified for standard reflow profiles including JEDEC J-STD-020D. Peak temperatures up to 260 °C are supported with ≤ 60 seconds above 220 °C. The package's thermal mass and pad layout comply with IPC-7351B for optimal wetting and void control in automated assembly.