Infineon Technologies BCR183S

Overview

BCR183S from Nexperia is a PNP silicon digital transistor with two internally isolated, well-matched transistors in a single SC74 (SOT-363) package, featuring built-in bias resistors R1 = R2 = 10 kΩ, V_CEO = 50 V, I_C = 100 mA, and AEC-Q101 qualification for automotive interface and switching applications.

For engineers reviewing the BCR183S datasheet, BCR183S pinout, BCR183S application, or BCR183S equivalent, key selection criteria include dual-transistor matching tolerance, integrated resistor ratio (R1/R2 = 0.9–1.1), thermal resistance (R_thJS ≤ 133 K/W), and guaranteed V_CEsat ≤ 0.3 V at I_C = 10 mA / I_B = 0.5 mA.

Technical Context

The BCR183S integrates two independent PNP digital transistors sharing a common substrate but electrically isolated, enabling matched switching behavior in compact space-constrained designs. Its internal R1/R2 network eliminates external bias components and ensures consistent turn-on/off thresholds across temperature (−40°C to +125°C).

Designed for DC-coupled logic interfacing and level translation, it operates with input on voltage V_i(on) = 1–2.5 V and input off voltage V_i(off) = 0.8–1.8 V at V_CE = 0.3 V and 5 V respectively, supporting TTL-to-CMOS signal conditioning without external pull-ups.

Key Specifications

Pinout & Package

BCR183S uses the SC74 (SOT-363) surface-mount package: 6-pin, 2.5 mm × 1.9 mm footprint, 1.1 mm max height, RoHS-compliant, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP digital transistor applications.

Compared with BCR193S, the BCR183S provides source-current drive essential for high-side switching, while BC847BS requires additional passives and offers no guaranteed input threshold behavior-making BCR183S optimal for deterministic logic-level translation in space- and reliability-critical designs.

Availability

BCR183S is available at Aetrix Electronics and suitable for automotive body control units, industrial PLC input modules, consumer appliance UI panels, and medical diagnostic equipment interfaces requiring stable component supply and AEC-Q101 compliance.

Supply support for BCR183S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard logic, discrete, and MOSFET solutions, with leadership in automotive-qualified components.

The BCR183S belongs to Nexperia's Automotive Digital Transistor product line, engineered specifically for robust, space-efficient logic interfacing in harsh-environment electronic control units.

FAQ

What is the maximum operating junction temperature for BCR183S?

The absolute maximum junction temperature (T_j) is 150°C, with derated total power dissipation beginning at case temperature (T_S) above 115°C. At T_S = 115°C, P_tot = 250 mW is fully supported; above that, linear derating applies per the datasheet curve on page 5.

Can BCR183S be used in AC-coupled signal paths?

No-BCR183S is designed exclusively for DC-coupled digital switching. Its built-in bias resistors fix the base-emitter operating point, making it unsuitable for analog amplification or AC signal amplification. It lacks specified small-signal parameters like g_m or h_fe bandwidth beyond f_T.

Is pin 1 orientation defined in the reel for BCR183S?

No-per the package drawing, symmetric types like BCR183S have no defined pin 1 orientation in the tape-and-reel. Visual identification must rely on the molded dot or laser marking on the top surface; orientation must be verified during placement setup using optical fiducials.

How does the R1/R2 ratio affect switching consistency between the two transistors?

The R1/R2 ratio tolerance of 0.9–1.1 ensures both transistors activate within ±100 mV of each other's V_i(on) threshold under identical conditions, minimizing propagation skew in dual-output timing-critical circuits such as synchronized LED strobes or mirrored sensor drivers.